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    MARKING CRR Search Results

    MARKING CRR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING CRR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAV70W-WS PB FREE PRODUCT DUAL SWITCHING DIODE FEATURE ƽ Small plastic SMD package. ƽ For high-speed switching applications. • We declare that the material of product ƽ compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device


    Original     		PDF BAV70W-WS BAV70W 3000/Tape SC-70 OT-323

    SiP6333R22D1

    Abstract: SiP6333R19D1 SiP6333R22D2 SiP6333R20D3 SiP6333 SIP6332R25D1 BNXXX BGxxx SiP6332R16D1 SiP6332R15D2
    Text: SiP6332/SiP6333 Vishay Siliconix New Product 3-Pin, Low-Power, mP Reset Circuits FEATRES APPLICATIONS D Tight Reset Voltage Tolerances "1.5% D Computers D Low Supply CRrent: < 3 mA D Precision Monitoring of 1.6 V and 2.5 V Power Supply Voltages D Other Threshold Voltage Options Available From 1.5 V to


    Original     		PDF SiP6332/SiP6333 100-mV SiP6333R25D3 S-32698--Rev. 19-Jan-04 SiP6333R22D1 SiP6333R19D1 SiP6333R22D2 SiP6333R20D3 SiP6333 SIP6332R25D1 BNXXX BGxxx SiP6332R16D1 SiP6332R15D2

    BKXXX

    Abstract: marking CCXXX SiP6332 MARKING SOT23 .215 .235 aexxx
    Text: SiP6332/SiP6333 Vishay Siliconix New Product 3-Pin, Low-Power, mP Reset Circuits FEATRES APPLICATIONS D Tight Reset Voltage Tolerances "1.5% D Computers D Low Supply CRrent: < 3 mA D Precision Monitoring of 1.6 V and 2.5 V Power Supply Voltages D Other Threshold Voltage Options Available From 1.5 V to


    Original     		PDF SiP6332/SiP6333 100-mV 08-Apr-05 BKXXX marking CCXXX SiP6332 MARKING SOT23 .215 .235 aexxx

    SiP6332

    Abstract: SIP6332R19D3 SiP6333R20D3 sot-23 MARKING 636 SiP6332R15D1 SiP6332R15D2 SiP6332R15D3 SiP6332R16D1 SiP6332R16D2 SiP6332R16D3
    Text: SiP6332/SiP6333 Vishay Siliconix New Product 3-Pin, Low-Power, mP Reset Circuits FEATRES APPLICATIONS D Tight Reset Voltage Tolerances "1.5% D Computers D Low Supply CRrent: < 3 mA D Precision Monitoring of 1.6 V and 2.5 V Power Supply Voltages D Other Threshold Voltage Options Available From 1.5 V to


    Original     		PDF SiP6332/SiP6333 100-mV 18-Jul-08 SiP6332 SIP6332R19D3 SiP6333R20D3 sot-23 MARKING 636 SiP6332R15D1 SiP6332R15D2 SiP6332R15D3 SiP6332R16D1 SiP6332R16D2 SiP6332R16D3

    AG01A

    Abstract: marking ag01 AG01 AG01Y AG01Z GAG01 GAG01A GAG01Y GAG01Z
    Text: BL GALAXY ELECTRICAL GAG01Y - - - GAG01A VOLTAGE RANGE: 70- 600 V CURRENT: 0.5-1.0 A HIGH EFFICIENCY RECTIFIERS FEATURES R-1 Low cost Diffused junction Low leakage Low forward voltage drop High crrent capability Easily cleaned with freon, alcohol, lsopropand


    Original     		PDF GAG01Y GAG01A MIL-STD-202, 007ounces GAG01Y AG01Y GAG01Z--GAG01A GAG01Z AG01A marking ag01 AG01 AG01Y AG01Z GAG01 GAG01A

    ESPC

    Abstract: MSDR SAA7174 R20 marking Upc 141 uPC 251 V17 marking code 110B CRC-10 MC92500
    Text: MOTOROLA Order this document by MC92501/D SEMICONDUCTOR TECHNICAL DATA MC92501 Advance Information ATM Cell Processor The ATM Cell Processor MC92501 is an Asynchronous Transfer Mode (ATM) layer device composed of dedicated high-performance ingress and egress cell


    Original     		PDF MC92501/D MC92501 MC92501) MC92501 MC92500/D, MC92501: ESPC MSDR SAA7174 R20 marking Upc 141 uPC 251 V17 marking code 110B CRC-10 MC92500

    Diode Mark ON B14

    Abstract: diode marking w9 ESPC marking c8 SAA7174 marking u12 diode A6 marking 5B17 E20 CORE size Marking B13
    Text: MOTOROLA Order this document by MC92501/D SEMICONDUCTOR TECHNICAL DATA MC92501 Advance Information ATM Cell Processor The ATM Cell Processor MC92501 is an Asynchronous Transfer Mode (ATM) layer device composed of dedicated high-performance ingress and egress cell


    Original     		PDF MC92501/D MC92501 MC92501) MC92501 MC92500/D, MC92501: Diode Mark ON B14 diode marking w9 ESPC marking c8 SAA7174 marking u12 diode A6 marking 5B17 E20 CORE size Marking B13

    3.3V Regulator SOT-89 CB33

    Abstract: 3.3V Regulator SOT-89 Ca33 AIC1734-33CXA AIC1734 aic173450cxt 2940 12V voltage regulator MARking cd30 regulator CB20 cd52 equivalent AIC1734-18CXATR
    Text: AIC1734 300mA Low Dropout Linear Regulator FEATURES DESCRIPTION Low Dropout Voltage of 470mV at 300mA Output Current 3.0V Output Version . Guaranteed 300mA Output Current. Low Ground Current at 55µA. 2% Accuracy Output Voltage of 1.8V/ 2.0V /2.5V /2.7V/ 3.0V/ 3.3V/ 3.5V/ 3.7V/ 3.8V/ 5.0V/


    Original     		PDF AIC1734 300mA 470mV AIC1734 300mA OT-89 3.3V Regulator SOT-89 CB33 3.3V Regulator SOT-89 Ca33 AIC1734-33CXA aic173450cxt 2940 12V voltage regulator MARking cd30 regulator CB20 cd52 equivalent AIC1734-18CXATR

    CRA034R

    Abstract: No abstract text available
    Text: Thick Film Array Chip Resistor—CRA Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy)


    Original     		PDF

    Microchip Technology Inc

    Abstract: Memory Serial EEPROM Errata 22067J microcontrollers low-power microchip events 8-BIT
    Text: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical


    Original     		PDF 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K DS22067J-page Microchip Technology Inc Memory Serial EEPROM Errata 22067J microcontrollers low-power microchip events 8-BIT

    Untitled

    Abstract: No abstract text available
    Text: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical


    Original     		PDF 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K DS22067J-page

    cra034r

    Abstract: rh 024c 064R 024R
    Text: Thick Film Array Chip Resistor—CRA Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (RuO2) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Glass) 4 Barrier Layer (Ni) 8 Secondary Overcoat (Epoxy)


    Original     		PDF

    SOT-323

    Abstract: M1MA141KT1G M1MA142KT1G marking mh sot323 LM1MA142K
    Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		PDF LM1MA141KT1G LM1MA142KT1G 70/SOT OT-323/SC-70 3000/Tape LM1MA141KT3G 10000/Tape SOT-323 M1MA141KT1G M1MA142KT1G marking mh sot323 LM1MA142K

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		PDF LM1MA141KT1G LM1MA142KT1G 70/SOTâ OT-323/SC-70 3000/Tape LM1MA141KT3G 10000/Tape

    11l02

    Abstract: 11L04 11-L1 B517 11LCXX d54 marking DS22067 11A01T 11L01 11A160
    Text: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical


    Original     		PDF 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K DS22067G-page 11l02 11L04 11-L1 B517 11LCXX d54 marking DS22067 11A01T 11L01 11A160

    B517

    Abstract: 11A160 11l02 Bullet 2 SOT-23 SAK B-517 11AA010T 11LC020 d44 marking soic 8 d54 marking
    Text: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology - 1 mA active current, typical


    Original     		PDF 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 1K-16K DS22067F-page B517 11A160 11l02 Bullet 2 SOT-23 SAK B-517 11AA010T 11LC020 d44 marking soic 8 d54 marking

    11l02

    Abstract: 11L161 XW 3pin B517 DS22067 B-517 11L01 marking XW 3pin 024X8 11L16
    Text: 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Description: • Single I/O, UNI/O® Serial Interface Bus • Low-Power CMOS Technology: - 1 mA active current, typical


    Original     		PDF 11AA010/11LC010 11AA020/11LC020 11AA040/11LC040 11AA080/11LC080 11AA160/11LC160 11AA161/11LC161 1K-16K DS22067H-page 11l02 11L161 XW 3pin B517 DS22067 B-517 11L01 marking XW 3pin 024X8 11L16

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		PDF LM1MA141KT1G S-LM1MA141KT1G LM1MA142KT1G S-LM1MA142KT1G AEC-Q101 70/SOTâ LM1MA141KT1G S-LM1MA141KT1G LM1MA142KT1G

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


    Original     		PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Darlington Transistors BCV 28 BCV 48 • For general AF applications • High collector current • High current gain • Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 4 3 Package1)


    OCR Scan     		PDF Q62702-C1852 Q62702-C1854 OT-89 28/4B EHP00313 T-150 flE35bQ5 D12D133

    5LC4

    Abstract: 4vtc diode marking aj smd marking YF smd regulator marking AJ SMD DIODE MARKING NK smd diode marking JC DE5LC405LC4 DE5LC40
    Text: Super Fast Recovery Diode Twin Diode mtmm o u t lin e Package : E-pack DE5LC40 Unit I mm Weight 0.326« T y p crrM o 400V 5A Feature • SMD • Low Noise • trr-50ns • SMD • e y -rx • tr r- 5 0 n s • DC/DC D y / K - Ï • m m , O A .R BE • a e .F A


    OCR Scan     		PDF DE5LC40 trr-50ns 03Z6g 50HzX CJ532-D 5LC4 4vtc diode marking aj smd marking YF smd regulator marking AJ SMD DIODE MARKING NK smd diode marking JC DE5LC405LC4 DE5LC40

    SRF 2769

    Abstract: circuit diagram of rf transmitter and receiver block diagram for RF transmitter AND RECEIVER diagram remote control receiver and transmitter ir transmitter receiver 2698B SCC2698BC1A84 mr1e scc2698 block diagram of mri machine
    Text: Philips Semiconductors Product specification Enhanced octal universal asynchronous receiver/transmitter Octal UART crr^ROftR DESCRIPTION FEATURES The SCC2698B Enhanced Octal Universal Asynchronous Receiver/Transmitter (Octal UART) is a single chip MOS-LSI


    OCR Scan     		PDF SCC2698B OT189-3 MO-047AF SRF 2769 circuit diagram of rf transmitter and receiver block diagram for RF transmitter AND RECEIVER diagram remote control receiver and transmitter ir transmitter receiver 2698B SCC2698BC1A84 mr1e scc2698 block diagram of mri machine

    imo inverter cd 750

    Abstract: Capacitor 226 25k 412 024C 064R CR0805 CR1206 CR1210 tv sony ic 1213 Ever Ohms chip resistor 226 20K 340
    Text: ' T A & L E . ' & F ' G Q M V E K V S • Thick Film Chip Resistor - C R Series. 2 ■ Low Ohm Chip Resistor. 5


    OCR Scan     		PDF 34632/B/0001/SM/En IAO-SMMT-01005 imo inverter cd 750 Capacitor 226 25k 412 024C 064R CR0805 CR1206 CR1210 tv sony ic 1213 Ever Ohms chip resistor 226 20K 340

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28