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    MARKING CODE YFS Search Results

    MARKING CODE YFS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE YFS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking c08

    Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
    Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode


    Original     		PDF CMLDM8002A CMLDM8002AJ OT-563 CMLDM8002A: CMLDM8002AJ: CMLDM8002A CMLDM8002AJ CMLDM8002AJ, 500mA marking c08 MARKING CODE 24 TRANSISTOR

    fl6l5201

    Abstract: No abstract text available
    Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		PDF FL6L5201 fl6l5201

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F


    Original     		PDF 2002/95/EC) 2SK3546G

    FET MARKING CODE

    Abstract: FL6L5201
    Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		PDF FL6L5201 FET MARKING CODE FL6L5201

    FC654601

    Abstract: FET MARKING CODE FET MARKING
    Text: FC654601 Tentative Total pages page FC654601 Silicon N-channel MOS FET FET1 Silicon N-channel MOS FET (FET2) For switching circuits Internal Connection Marking Symbol : V6 6 5 4 Package Code : SMini6-F3-B FET 1 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original     		PDF FC654601 FC654601 FET MARKING CODE FET MARKING

    FL6L5203

    Abstract: FET MARKING CODE
    Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF FL6L5203 FL6L5203 FET MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF FL6L5203

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		PDF 2002/95/EC) 2SK3546G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665G Silicon N-channel MOSFET For switching circuits • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3O • Pin Name 1: Gate 2: Source 3: Drain


    Original     		PDF 2002/95/EC) 2SK0665G

    2SK3547G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		PDF 2002/95/EC) 2SK3547G 2SK3547G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		PDF 2002/95/EC) 2SK3547G

    2SK3546G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		PDF 2002/95/EC) 2SK3546G 2SK3546G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665G Silicon N-channel MOSFET For switching circuits • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3O • Pin Name 1: Gate 2: Source 3: Drain


    Original     		PDF 2002/95/EC) 2SK0665G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te


    Original     		PDF 2002/95/EC) 2SK3547G

    2SK3539G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y


    Original     		PDF 2002/95/EC) 2SK3539G 2SK3539G

    Untitled

    Abstract: No abstract text available
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303

    TPCF8303

    Abstract: toshiba f5b
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303 TPCF8303 toshiba f5b

    toshiba f5b

    Abstract: TPCF8303
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303 toshiba f5b TPCF8303

    Untitled

    Abstract: No abstract text available
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303

    TPCF8B01

    Abstract: No abstract text available
    Text: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8B01 TPCF8B01

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8103 TPCF8103

    K3050

    Abstract: TPCF8B01
    Text: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8B01 K3050 TPCF8B01

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 72 mΩ (typ.)( VGS =-4.5V) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8103 TPCF8103

    TPCF8B01

    Abstract: No abstract text available
    Text: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8B01 TPCF8B01