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    MARKING CODE YB TRANSISTOR Search Results

    MARKING CODE YB TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE YB TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR MARKING YB

    Abstract: 74LVC1G38 74LVC1G38GF 74LVC1G38GM 74LVC1G38GV 74LVC1G38GW
    Text: 74LVC1G38 2-input NAND gate; open drain Rev. 4 — 5 October 2010 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.


    Original     		74LVC1G38 74LVC1G38 TRANSISTOR MARKING YB 74LVC1G38GF 74LVC1G38GM 74LVC1G38GV 74LVC1G38GW PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC1G38 2-input NAND gate; open drain Rev. 6 — 2 July 2012 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.


    Original     		74LVC1G38 74LVC1G38 PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC1G38 2-input NAND gate; open drain Rev. 7 — 4 October 2012 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.


    Original     		74LVC1G38 74LVC1G38 PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC1G38 2-input NAND gate; open drain Rev. 6 — 2 July 2012 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.


    Original     		74LVC1G38 74LVC1G38 PDF

    marking yb sot23

    Abstract: SOT23 5 Code yb PC SOT23 3.0V marking code Yb sot-23 sot23 yb yb sot23 marking YB
    Text: PRELIMINARY SPECIFICATION PI3A4628C 3.0V, SOTiny Single-Supply 0.8Ω SPST NO CMOS Analog Switch with -1.0V to 3.3V Operating Range Features Description • Analog Signal Range: -1.0V to VCC when switch is “On” PI3A4628C is a single-pole/single-throw (SPST) normally open


    Original     		PI3A4628C OT-23 PI3A4628C PI3A4628CTX PI3A4628CTEX PI3A4628CZCEX OT-23 marking yb sot23 SOT23 5 Code yb PC SOT23 3.0V marking code Yb sot-23 sot23 yb yb sot23 marking YB PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC1G38 2-input NAND gate; open drain Rev. 5 — 6 December 2011 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.


    Original     		74LVC1G38 74LVC1G38 PDF

    74LVC1G38

    Abstract: 74LVC1G38GF 74LVC1G38GM 74LVC1G38GV 74LVC1G38GW JESD22-A114E MO-203
    Text: 74LVC1G38 2-input NAND gate; open drain Rev. 03 — 27 August 2007 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment.


    Original     		74LVC1G38 74LVC1G38 74LVC1G38GF 74LVC1G38GM 74LVC1G38GV 74LVC1G38GW JESD22-A114E MO-203 PDF

    marking code YB

    Abstract: 74LVC1G38GW
    Text: 74LVC1G38 2-input NAND gate open drain Rev. 02 — 13 September 2006 Product data sheet 1. General description The 74LVC1G38 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this


    Original     		74LVC1G38 74LVC1G38 marking code YB 74LVC1G38GW PDF

    LT133X1-104

    Abstract: LVDS connector 20 pins LCD 13.3 Samsung tube tv samsung lt133x1-104 TFT LCD n 740 samsung SD5114 lt133x date code marking samsung transistor 2SK1059 DIAGRAM of samsung lcd tv power supply
    Text: APPROVAL TO : DATE : SAMSUNG TFT-LCD MODEL NO. : LT133X1-104 NOTE : Agreed by : Checked by : Assit. Mgr Mgr Senr. Mgr QA Prodt. Tec. Dev. Test PREPARED BY : LCD Application Engneering Team SAMSUNG ELECTRONICS CO., LTD. Doc. No. LT133X1-104 Rev. No 002 - G - 970519


    Original     		LT133X1-104 QSTD133 LT133X1-104 LVDS connector 20 pins LCD 13.3 Samsung tube tv samsung lt133x1-104 TFT LCD n 740 samsung SD5114 lt133x date code marking samsung transistor 2SK1059 DIAGRAM of samsung lcd tv power supply PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		74LVC2G38 74LVC2G38 PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 11 — 8 April 2013 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		74LVC2G38 74LVC2G38 PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		74LVC2G38 74LVC2G38 PDF

    100N055

    Abstract: NP100N055PUH NP100N055MUH marking code Yb Transistor TRANSISTOR MARKING YB NP100N055NUH NP100N055NUH-S18 MP-25ZP NP100N055PUHE1AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N055MUH, NP100N055NUH, NP100N055PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N055MUH, NP100N055NUH, NP100N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		NP100N055MUH, NP100N055NUH, NP100N055PUH NP100N055PUH NP100N055MUH-S18-AY NP100N055NUH-S18-AY NP100N055PUH-E1-AY NP100N055PUH-E2-AY 100N055 NP100N055MUH marking code Yb Transistor TRANSISTOR MARKING YB NP100N055NUH NP100N055NUH-S18 MP-25ZP NP100N055PUHE1AY PDF

    D1881

    Abstract: 90n04 NP90N04MUH NP90N04PUH NP90N04NUH-S18 MP-25ZP NP90N04NUH
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04MUH, NP90N04NUH, NP90N04PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04MUH, NP90N04NUH, NP90N04PUH are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION


    Original     		NP90N04MUH, NP90N04NUH, NP90N04PUH NP90N04PUH NP90N04MUH-S18-AY NP90N04NUH-S18-AY NP90N04PUH-E1-AY NP90N04PUH-E2-AY D1881 90n04 NP90N04MUH NP90N04NUH-S18 MP-25ZP NP90N04NUH PDF

    D1881

    Abstract: NP90N055PUH NP90N055MUH MP-25ZP NP90N055NUH TRANSISTOR MARKING YB NP90N055NUH-S18
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MUH, NP90N055NUH, NP90N055PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MUH, NP90N055NUH, NP90N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		NP90N055MUH, NP90N055NUH, NP90N055PUH NP90N055PUH NP90N055MUH-S18-AY NP90N055NUH-S18-AY NP90N055PUH-E1-AY NP90N055PUH-E2-AY D1881 NP90N055MUH MP-25ZP NP90N055NUH TRANSISTOR MARKING YB NP90N055NUH-S18 PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC1G38-Q100 2-input NAND gate; open drain Rev. 1 — 27 November 2013 Product data sheet 1. General description The 74LVC1G38-Q100 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this


    Original     		74LVC1G38-Q100 74LVC1G38-Q100 74LVC1G38 PDF

    Untitled

    Abstract: No abstract text available
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 9 — 28 November 2011 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		74LVC2G38 74LVC2G38 PDF

    5252 F 1008

    Abstract: transistor 1FX sd 1074 transistor SCR SN 100 folded cascode current mirror op amp FSC20000512 LMV712 MSOP-10 MSOP-10L Q-2000
    Text: LMV712 Rail-to-Rail I/O, Dual Op Amp Qualification Package National’s LMV712 Dual Op Amp Offers 5V/µs Slew Rate, 5 MHz GBW LLP-10 • 0.1 µA Shutdown Current • Noise at <20 nV/√ Hz @ 1 kHz • Drives 600Ω Load @ 2.7V Actual Size 3 mm x 3 mm x .75 mm


    Original     		LMV712 LLP-10 LLP-10 MSOP-10 LMV712 5252 F 1008 transistor 1FX sd 1074 transistor SCR SN 100 folded cascode current mirror op amp FSC20000512 MSOP-10L Q-2000 PDF

    74LVC2G38

    Abstract: 74LVC2G38DC 74LVC2G38DP 74LVC2G38GM 74LVC2G38GT
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 8 — 4 November 2010 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		74LVC2G38 74LVC2G38 74LVC2G38DC 74LVC2G38DP 74LVC2G38GM 74LVC2G38GT PDF

    Untitled

    Abstract: No abstract text available
    Text: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA


    Original     		TLV705 TLV705P SBVS151C 200-mA, TLV705 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA


    Original     		TLV705 TLV705P SBVS151C 200-mA, TLV705 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA


    Original     		TLV705 TLV705P SBVS151C 200-mA, TLV705 PDF

    Untitled

    Abstract: No abstract text available
    Text: TLV705 TLV705P www.ti.com SBVS151C – DECEMBER 2010 – REVISED OCTOBER 2012 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP FEATURES DESCRIPTION • Very Low Dropout: – 105 mV at IOUT = 150 mA – 145 mV at IOUT = 200 mA


    Original     		TLV705 TLV705P SBVS151C 200-mA, TLV705 PDF

    AY 5 3500

    Abstract: ring COUNTER marking code y6 package marking y6 AY-5-3600 "general instrument" "keyboard encoder" 40 pin a3600 x6 marking AKO+50+365
    Text: Cj [ n i r a l INS! K L iM f N I AY-5-3600 -f Keyboard Encoder FEATURES DESCRIPTION The General Instrument AY-5-3600 is a Keyboard Encoder containing a 3600 bit Read Only Memory and all the logic necessary to encode single pole single throw keyboard closures


    OCR Scan     		300nSEC AY 5 3500 ring COUNTER marking code y6 package marking y6 AY-5-3600 "general instrument" "keyboard encoder" 40 pin a3600 x6 marking AKO+50+365 PDF