B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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77V106
Abstract: YB device marking Code
Text: 77V106 Device Errata Notes Supplemental Information The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF <\\ZZF Revision/Stepping Date Code
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77V106
77V106
L25TF
YB device marking Code
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77V106
Abstract: 77V107 YB device marking Code
Text: 77V107 Device Errata Notes Supplemental Information The revision/die stepping of the 77V107 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 77V107 L25TF <\\ZZF Revision/Stepping
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77V107
77V107
77V106
L25TF
77V106
YB device marking Code
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YB device marking Code
Abstract: No abstract text available
Text: 9 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF Yyywwc Revision/Stepping
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77V106
L25TF
YB device marking Code
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smd marking code YBs SOT-23
Abstract: Q67041-S1417 marking YBS sot-23 smd marking code sot-23 infineon YBs sot-23 Q67041S1417 SMD MARKING QG 6 PIN
Text: BSS 84 P Final data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking
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OT-23
VPS05161
Q67041-S1417
smd marking code YBs SOT-23
Q67041-S1417
marking YBS sot-23
smd marking code sot-23 infineon
YBs sot-23
Q67041S1417
SMD MARKING QG 6 PIN
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smd marking code ybs
Abstract: q67041-s1417 SP000082879 BSS84P E6327 marking YBs sot-23 YBs 98 BSS84P E6327 L6327 YBs 70
Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 Type Package Ordering Code Marking BSS84P - E6327 PG-SOT-23
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PG-SOT-23
Q67041-S1417
BSS84P
L6327
SP000082879
E6327
VPS05161
smd marking code ybs
q67041-s1417
SP000082879
BSS84P E6327
marking YBs sot-23
YBs 98
E6327
L6327
YBs 70
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Q67041-S1417
Abstract: BSS 84 infineon
Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P
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OT-23
VPS05161
Q67041-S1417
Q67041-S1417
BSS 84 infineon
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PDF
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smd marking code YBs 14
Abstract: smd marking code ybs marking YBs
Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P
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PG-SOT-23
VPS05161
Q67041-S1417
smd marking code YBs 14
smd marking code ybs
marking YBs
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T63XA
Abstract: TR MARKING CODE YA T63YA marking code YB marking code R12 YB MARKING
Text: Data sheet E 8/2.405 - 10497 0,25 W at 85°C T63 XA - XB YA - YB ZA - ZB 1/4” multiturn sealed container cermet trimmer CECC 41 100 NF C 83-251 MIL-R-22097 – industrial grade SPECIFICATIONS MECHANICAL MECHANICAL TRAVEL. OPERATING TORQUE max. Ncm .
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MIL-R-22097
T63XA
T63XB
T63YA
T63YB
T63YA,
T63ZA
TR MARKING CODE YA
marking code YB
marking code R12
YB MARKING
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code res pack 8
Abstract: T9XA marking code R12 BY250
Text: Data sheet E 7/2.411 - 10497 0,5 W at 85°C T9 XA - XB YA - YB Z 3/8” square multiturn fully sealed container cermet trimmer NF C/UTE 83-251 CECC 41 101-004 A, B, C, D, E MIL-R-22097 (RJ24) GAM-T-1 LNZ – military and professional grade SPECIFICATIONS
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MIL-R-22097
code res pack 8
T9XA
marking code R12
BY250
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PDF
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by250
Abstract: marking code r12
Text: Data sheet E 9/2.406 - 10497 0,25 W at 85°C T6 XA - XB YA - YB ZA - ZB 1/4” multiturn fully sealed container cermet trimmer CECC 41 101-005 A, B, C, D NF C/UTE 83-251 MIL-R-22097 (RJ26) GAM-T-1 – military and professional grade SPECIFICATIONS MECHANICAL
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MIL-R-22097
by250
marking code r12
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"Cermet Trimmer"
Abstract: marking code Yb Transistor marking code YB marking code YA
Text: Data sheet E 9/2.407 - 10497 0,5 W at 85°C T7 YA YB miniature cermet trimmer NF C 83-251 LNZ – industrial grade SPECIFICATIONS MECHANICAL MECHANICAL TRAVEL. OPERATING TORQUE max. Ncm . END STOP TORQUE (max. Ncm). UNIT WEIGHT (max. g.). 300° ±5°
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YB225
Abstract: IEC60529
Text: New YB2 Series 22mm Pushbuttons Flush Mount IP65 Panel Seal Super Low Profile Tamper Resistant Series YB2 22mm Panel Seal Pushbuttons We Make It Easy! 1. We assemble the parts for you – saves you time and money. Includes LEDs and accessories 2. Easy to order – all options and accessories displayed in easy-to-follow ordering table.
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YB2-Amber48)
YB225
IEC60529
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AT3006
Abstract: YB15CKW "Lens tilt"
Text: Toggles Series YB Keylocks Programmable Illuminated PB Pushbuttons Rockers General Specifications Electrical Capacity Resistive Load Power Level (silver): 3A @ 125V AC or 3A @ 250V AC or 3A @ 30V DC Logic Level (gold): 0.4VA maximum @ 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V)
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sot marking code ZS
Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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OCR Scan
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OT-23
sot marking code ZS
Transistor BFR
MARKING CODE R7 RF TRANSISTOR
sot-23 npn marking code VD
BFR106
Transistor BFR 30
sot-23 M
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q406 transistor
Abstract: nf 820 transistor q406 q406 transistor data
Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q
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OCR Scan
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Q62702-S638
Q62702-S637
E6288
E6296
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
q406 transistor
nf 820
transistor q406
q406 transistor data
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PDF
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SIEMENS BST 68
Abstract: SIEMENS BST 68 L
Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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900MHz
Q62702-F1577
OT-343
H35b05
BFP193W
fl53SbOS
SIEMENS BST 68
SIEMENS BST 68 L
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PDF
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BFQ64
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings
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OCR Scan
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BFQ64
OT-89
BFQ64
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PDF
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2907a
Abstract: 2907 A2907 a 2907 BT2907A NPN transistors sot-23 26
Text: SIEMENS PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration
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OCR Scan
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Q68000-A6501
Q68000-A6474
OT-23
EHP0075I
2907a
2907
A2907
a 2907
BT2907A
NPN transistors sot-23 26
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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Q62702-F1382
OT-143
235bQ5
BFP183
900MHz
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PDF
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sot-23 MARKING CODE ZA
Abstract: sot-23 CODE 41 bfs17p mc
Text: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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OCR Scan
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BFS17P
OT-23
sot-23 MARKING CODE ZA
sot-23 CODE 41
bfs17p mc
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PDF
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ERB83-004
Abstract: A342
Text: E R B 8 3 - 0 0 4 1 7 A '> 3 'yblr— ' V J T ÿ -f =t—F W J& '+ T i : Outline Drawings S C H O TTK Y BARRIER DIODE i Features • 1&VF Low V F i7j\ : Marking • X 4 '& > ? * ) : i - K t f A 5- n - K : 81 Color code : ^>u<- Super high speed switching.
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OCR Scan
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ERB83-004
A342
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PDF
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LT/SG3527A
Abstract: 33472-1717
Text: TABLE OF CONTENTS S H E E T NO. S H E E T DESCRIPTION 1 NOTES 2 K EY CONFIGURATIONS 3 R EC EP T A C L E S E A L E D A SSEM B L Y 4 -6 BOM LASER MARKING ON THIS SURFACE MOLD CAVIT R E C Y C LE CODE LOCATION P RIM AR Y LOCK R EIN FO R C E M E N T PLR SHOWN
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OCR Scan
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CHEC-1801
LT/SG3527A
33472-1717
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PDF
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