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    MARKING CODE UJ Search Results

    MARKING CODE UJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE UJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BY228ph

    Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
    Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE


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    PDF 1N4001G 1N4001 BY8106 OD61AD 1N4002G 1N4002 BY8108 OD61AE 1N4003G 1N4003 BY228ph BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


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    PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: BCE Sud Passive Components Product specification Supersedes data of 04 November 2002 2003 April 18 BCE Sud Passive Components A former part of Philips Components BCE Sud Passive Components 2003 April 18 BCE Sud Passive Components The temperature coefficient is indicated by a marking code


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    PDF

    V170R

    Abstract: SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor
    Text: VARISTORS /> S C 32 i< !K <o Style Designation: (typical Standard Marking: R6921ZOV511RA110 Where: RCoating identification, R means standard flame-retardant fluid bed epoxy. 69 Size code, 2 numbers. See Dimensions Table. 21 Lead Configuration code, 1 or 2 numbers used only for non­


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    PDF R6921ZOV511RA110 4K221 S20K140 ERZC20OK361 ERZC20DK391 S20K230 S20K250 ERZC20DK471 S20K300 V480LA V170R SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W


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    PDF OT-323 0535b05

    SOT23 KJA

    Abstract: No abstract text available
    Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type


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    PDF 47kft) Q62702-C2257 OT-23 Resistan200 SOT23 KJA

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type


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    PDF 22kfl) OT-23 6235bQS D1B0634 a23St 0120B35

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP it UJ CO il Q62702-A3473 O s1G CM SMBTA 06M II Marking Ordering Code Pin Configuration CÛ Type Package


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    PDF Q62702-A3473 SCT-595 300ns;

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon Switching Transistors • • • BSS 79 BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, B S S 82 PNP Type BSS BSS BSS BSS 79 79 81 81 B C B C Marking Ordering code for versions in bulk Ordering code for


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    PDF Q62702-S403 Q62702-S402 Q62702-S420 Q62702-S419 Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S559 BSS79 BSS81

    bft93

    Abstract: transistor BF 199
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF BFT93 BFT93 Q62702-F1063 OT-23 900MHz transistor BF 199

    BC 170 transistor

    Abstract: No abstract text available
    Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration


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    PDF 17-16W BC807W, BC808W OT-323 Q62702-C2321 18-16W Q62702-Ã 18-25W Q62702-C2323 18-40W BC 170 transistor

    BF 182 transistor

    Abstract: transistor 182 marking code M21
    Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    PDF 900MHz OT-143 Q62702-F1396 BF 182 transistor transistor 182 marking code M21

    7826 Transistor

    Abstract: marking code Sk transistors
    Text: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)


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    PDF 2SD2114K SC-59) 2SD2114K; 2SD2114K 7826 Transistor marking code Sk transistors

    bo 947

    Abstract: BDP947C dp947
    Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B


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    PDF BDP948, BDP950 BDP947 Q62702-D1335 Q62702-D1337 OT-223 OT-223 300ns; bo 947 BDP947C dp947

    AX057

    Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
    Text: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code


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    PDF AX057 AX057 marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23


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    PDF 22ki2) Q62702-C2264 OT-23

    transistor d2118

    Abstract: No abstract text available
    Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3


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    PDF 2SD2118F5 SC-63) D2118 transistor d2118

    KC-79-35

    Abstract: No abstract text available
    Text: DASH NO. M CODE MADE FROM NOTES: 1. SAME AS UG-1094/U EXCEPT FOR FINISH & MARKING. 2. MATERIALS: INSULATOR: TEFLON, ASTM-D-4894 LOCKWASHER: PHOSPHOR BRONZE. ASTM-B103 CENTER CONTACT: BER. COPPER, ASTM-B-196 ALL OTHER METAL PARTS: BRASS, ASTM-B16 3. FINISHES:


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    PDF UG-1094/U ASTM-D-4894 ASTM-B103 ASTM-B-196 ASTM-B16 ASTM-G-45204 WJM0228 KC-79-35

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05

    131 Transistor

    Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
    Text: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA


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    PDF 2SC2059K 2SC4099 2SC4649 SC-59) SC-70) SC-75) 2SC2059K, 2SC4099 2SC4649; 131 Transistor TRANSISTOR 2SC 2SC4649 2SC2059K SC-75 T106 T146 transistor 3bt marking 1F SMT3

    K 4005 transistor

    Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
    Text: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for


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    PDF 2SC4505 OT-89, SC-62) 2SC4505; 00147flb K 4005 transistor ic MARKING FZ 2SC4505 T100 T200 2SC4505CE

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BDP 952 PNP Silicon AF Power Transistor • For A F drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 952 BDP 952 Q62702-D1340 1 =B


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    PDF Q62702-D1340 BDP951. BDP955 Q62702-D1342 Q62702-D1344 OT-223 S3Sb05 D121040

    2SA amplifier

    Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
    Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K


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    PDF 2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; -120V 2SC3906K 2SC4102 2SA1514K 2SA amplifier H1000I 2SA1579 2SC4102 transistor 2SA transistor PNP