Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING CODE SS16 Search Results

    MARKING CODE SS16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE SS16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original
    PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original
    PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Schottky Diodes Operating Temperature: -65o C to 150°C VF V Max. Part No. Device Marking Code Pd (mW) PIV (V) Min. IR (µA) Max. @ 0.1 mA @ 1.0 mA @ 2.0 mA @ 10 mA @ 15 mA @ 20 mA @ 30 mA @ @ 40/50 100/200 mA mA @ 250 mA TR R (nS) Max. Outline


    Original
    PDF BAT54 BAT54A BAT54C BAT54S BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04

    Untitled

    Abstract: No abstract text available
    Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF SS13M SS16M J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1308025

    Untitled

    Abstract: No abstract text available
    Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020


    Original
    PDF SS13M SS16M J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1308025

    SS16MHRSG

    Abstract: No abstract text available
    Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020


    Original
    PDF SS13M SS16M J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1406008 SS16MHRSG

    Untitled

    Abstract: No abstract text available
    Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020


    Original
    PDF SS13M SS16M J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1308025

    Untitled

    Abstract: No abstract text available
    Text: SS13M - SS16M CREAT BY ART 1.0AMPS. Surface Mount Schottky Barrier Micro SMA Features — Very low profile - typical height of 0.68mm — Ideal for automated placement — Low forward voltage drop. Low power loss. — High efficiency — Meet MSL level 1, per J-STD-020D,


    Original
    PDF SS13M SS16M J-STD-020D, 22-A111 2002/95/EC 2002/96/EC J-STD-002B, JESD22-B102D RS-481

    Untitled

    Abstract: No abstract text available
    Text: SS13M - SS16M 1.0AMPS. Surface Mount Schottky Barrier Micro SMA Features ­ Very low profile - typical height of 0.68mm ­ Ideal for automated placement ­ Low forward voltage drop. Low power loss. ­ High efficiency ­ Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260


    Original
    PDF SS13M SS16M J-STD-020D, 2002/95/EC 2002/96/EC 22-A111 J-STD-002B, JESD22-B102D

    Untitled

    Abstract: No abstract text available
    Text: SS13M - SS16M CREAT BY ART 1.0AMPS. Surface Mount Schottky Barrier Micro SMA Features — Very low profile - typical height of 0.68mm — Ideal for automated placement — Low forward voltage drop. Low power loss. — High efficiency — Meet MSL level 1, per J-STD-020D,


    Original
    PDF SS13M SS16M J-STD-020D, 22-A111 2002/95/EC 2002/96/EC J-STD-002B, JESD22-B102D RS-481

    Untitled

    Abstract: No abstract text available
    Text: SS13M - SS16M CREAT BY ART 1.0AMPS. Surface Mount Schottky Barrier Micro SMA Features — Very low profile - typical height of 0.68mm — Ideal for automated placement — Low forward voltage drop. Low power loss. — High efficiency — Meet MSL level 1, per J-STD-020D,


    Original
    PDF SS13M SS16M J-STD-020D, 22-A111 2002/95/EC 2002/96/EC J-STD-002B, JESD22-B102D RS-481

    Untitled

    Abstract: No abstract text available
    Text: creat by art SS13M - SS16M 1.0 AMP. Surface Mount Schottky Barrier Rectifier Micro SMA Pb RoHS COMPLIANCE Features — — — — — Very low profile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency


    Original
    PDF SS13M SS16M J-STD-020D, 22-A111 2002/95/EC 2002/96/EC AEC-Q101 SS16M)

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL REF. : SS1608□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded SMD Power Inductor NAME REV. 20121210-C PAGE 1 Ⅰ﹒Configuration and dimensions: C B 220 A I J F E H K G PCB Pattern Unit:m/m A 6.50 ±0.2 B C 4.40 max. 2.90 ±0.15


    Original
    PDF SS1608â 20121210-C 30sec 60sec 150sec MIL-STD-202 JESD22-B111 JIS-C-6429 AR-001C J-STD-002

    SS16 Diode

    Abstract: SS16 DIODE schottky marking code ss16 SS16 MARKING
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF 1E-02 1E-03 1E-04 1E-05 1E-06 SS16 Diode SS16 DIODE schottky marking code ss16 SS16 MARKING

    diode MARKING CODE SS16

    Abstract: 403D SS16 Diode SS16T3
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF

    SS14-E3

    Abstract: SS14 Marking Code SS14 marking ss14 JESD22-B102 J-STD-002 SS16 MARKING S6 sma S4 general semiconductor sma
    Text: SS12 thru SS16 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop


    Original
    PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC SS14-E3 SS14 Marking Code SS14 marking ss14 JESD22-B102 J-STD-002 SS16 MARKING S6 sma S4 general semiconductor sma

    403D

    Abstract: SS16 SS16T3
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF SS16/D 403D SS16 SS16T3

    SS16 DIODE schottky

    Abstract: SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF r14525 SS16/D SS16 DIODE schottky SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16

    "General Semiconductor" DO-214AC

    Abstract: s6 general semiconductor marking CODE S4 General Semiconductor GENERAL SEMICONDUCTOR s6 SS13 SS14 SS15 SS16 s4 general semiconductor s4 schottky "general semiconductor"
    Text: SS12 thru SS16 Vishay Semiconductors formerly General Semiconductor DO-214AC SMA Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 60V Forward Current 1.0A Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout


    Original
    PDF DO-214AC 19-Apr-04 "General Semiconductor" DO-214AC s6 general semiconductor marking CODE S4 General Semiconductor GENERAL SEMICONDUCTOR s6 SS13 SS14 SS15 SS16 s4 general semiconductor s4 schottky "general semiconductor"

    s6 general semiconductor

    Abstract: s6 schottky sma "General Semiconductor" DO-214AC SS14 VISHAY diode s4 do-214ac s4 SMA package schottky S4 marking vishay JEDEC DO-214AC PCB layout ss14 do-214ac marking ss14
    Text: SS12 thru SS16 Vishay Semiconductors formerly General Semiconductor DO-214AC SMA Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 60V Forward Current 1.0A Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout


    Original
    PDF DO-214AC 13-Feb-02 s6 general semiconductor s6 schottky sma "General Semiconductor" DO-214AC SS14 VISHAY diode s4 do-214ac s4 SMA package schottky S4 marking vishay JEDEC DO-214AC PCB layout ss14 do-214ac marking ss14

    vishay marking S4

    Abstract: JESD22-B102D J-STD-002B SS16 SS14-E3 s6 schottky sma S4 vishay sma SS14
    Text: SS12 thru SS16 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop


    Original
    PDF DO-214AC J-STD-020C 2002/95/EC 2002/96/EC 08-Apr-05 vishay marking S4 JESD22-B102D J-STD-002B SS16 SS14-E3 s6 schottky sma S4 vishay sma SS14

    SS14 VISHAY

    Abstract: s4 vishay vishay marking S4 SS14-E3 SS14-E3/61T marking ss14 1SS15 marking code ss16 ss14 do-214ac s6 general semiconductor
    Text: SS12 thru SS16 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop


    Original
    PDF DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 SS14 VISHAY s4 vishay vishay marking S4 SS14-E3 SS14-E3/61T marking ss14 1SS15 marking code ss16 ss14 do-214ac s6 general semiconductor

    s6 schottky sma

    Abstract: diode s4 do-214ac diode S6 SMA rectifier s4 79 ss14 do-214ac S4 Schottky Rectifier MARKING S6 sma SS16 S6 MARKING code 14 DO-214AC Marking s3 Schottky barrier
    Text: SS12 thru SS16 Surface Mount Schottky Barrier Rectifier Reverse Voltage 20 to 60V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.094 MAX. (2.38 MAX.) 0.177 (4.50)


    Original
    PDF DO-214AC DO-214AC MIL-STD750, s6 schottky sma diode s4 do-214ac diode S6 SMA rectifier s4 79 ss14 do-214ac S4 Schottky Rectifier MARKING S6 sma SS16 S6 MARKING code 14 DO-214AC Marking s3 Schottky barrier

    ss1s

    Abstract: general instrument S4
    Text: SS12THRU SS16 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 60 Volts Forward Current - 1.0 Ampere _ FEATURES UKJ-Í ♦ Plastic package has underwriters laboratory Flammability classification 94V-0 ♦ For surface mount applications


    OCR Scan
    PDF SS12THRU DO-214ACNOTES 300ns ss1s general instrument S4