B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
|
Original
|
GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
|
PDF
|
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
|
Original
|
GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
|
PDF
|
L43 SMD
Abstract: S43 SMD A70 SMD A73 smd A72 SMD l44 smd p74 smd SMD l43 s43 smd marking code S44 SMD
Text: Schottky Barrier Diodes Multiple Terminals Part No. Marking Code BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS BAS70CDWS BAS70SDWS L4 L42 L43 L44 S40 S42 S43 S44 A70 A72 A73 A74 TST0051C-331F5 UW TST0073C-732F5
|
Original
|
BAT54TWS
BAT54ADWS
BAT54CDWS
BAT54SDWS
BAS40TWS
BAS40ADWS
BAS40CDWS
BAS40SDWS
BAS70TWS
BAS70ADWS
L43 SMD
S43 SMD
A70 SMD
A73 smd
A72 SMD
l44 smd
p74 smd
SMD l43
s43 smd marking code
S44 SMD
|
PDF
|
S43 SMD
Abstract: L43 SMD A70 SMD A72 SMD S43 MARKING SMD l43 S42 SMD S44 SMD A73 smd SMD L44
Text: Schottky Barrier Diodes Multiple Terminals Part No. Marking Code BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS BAS70CDWS BAS70SDWS L4 L42 L43 L44 S40 S42 S43 S44 A70 A72 A73 A74 TST0051C-331F5 UW TST0073C-732F5
|
Original
|
BAT54TWS
BAT54ADWS
BAT54CDWS
BAT54SDWS
BAS40TWS
BAS40ADWS
BAS40CDWS
BAS40SDWS
BAS70TWS
BAS70ADWS
S43 SMD
L43 SMD
A70 SMD
A72 SMD
S43 MARKING
SMD l43
S42 SMD
S44 SMD
A73 smd
SMD L44
|
PDF
|
marking code s5 SOT23-6
Abstract: BAS70WT marking S5 sot363 KL8 SOT-23
Text: TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Peak Reverse Voltage Maximum Reverse Current PRV VR IR V V mA Maximum Forward Voltage Drop VF @ IF mV VF @ IF mA Surge Current Capacitance IFSM CTOT Marking Code Package Pin Identity
|
Original
|
KL2/L42
KL3/L43
KL4/L44
OT-23
marking code s5 SOT23-6
BAS70WT
marking S5 sot363
KL8 SOT-23
|
PDF
|
pn0307
Abstract: BSPD50N03S2-07 SPD50N03S2-07
Text: SPD50N03S2-07 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature dv/dt rated VDS 30 V RDS on 7.3 m ID 50 A P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11 Q67040-S4430
|
Original
|
SPD50N03S2-07
P-TO-252-3-11
P-TO-252-3-11
Q67040-S4430
PN0307
BSPD50N03S2-07,
SPD50N03S2-07
pn0307
BSPD50N03S2-07
|
PDF
|
TP0101T
Abstract: No abstract text available
Text: TP0101T P-Channel Enchancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.65 @ VGS = –4.5 V –0.5 0.85 @ VGS = –2.5 V –0.4 TO-236 (SOT-23) G 1 3 S D 2 Top View TP0101T (P0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
TP0101T
O-236
OT-23)
S-44205--Rev.
31-Mar-95
TP0101T
|
PDF
|
MOSFET n0 sot-23
Abstract: TN0200T
Text: TN0200T N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TO-236 (SOT-23) G 1 D 3 S 2 Top View TN0200T (N0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
TN0200T
O-236
OT-23)
S-44204--Rev.
31-Mar-95
MOSFET n0 sot-23
TN0200T
|
PDF
|
MOSFET n0 sot-23
Abstract: TN0200T
Text: TN0200T N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) 20 ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TO-236 (SOT-23) G 1 D 3 S 2 Top View TN0200T (N0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
TN0200T
O-236
OT-23)
S-44204--Rev.
31-Mar-95
MOSFET n0 sot-23
TN0200T
|
PDF
|
TP0101T
Abstract: No abstract text available
Text: TP0101T P-Channel Enchancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.65 @ VGS = –4.5 V –0.5 0.85 @ VGS = –2.5 V –0.4 TO-236 (SOT-23) G 1 3 S D 2 Top View TP0101T (P0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
TP0101T
O-236
OT-23)
S-44205--Rev.
31-Mar-95
TP0101T
|
PDF
|
CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
|
Original
|
400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS40TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 2 1 SOT- 363
|
Original
|
BAS40TW/ADW/CDW/SDW
OT-363
SC70-6L)
BAS40TW
BAS40ADW
BAS40CDW
BAS40SDW
|
PDF
|
87C196KN
Abstract: intel embedded microcontroller handbook 8XC196KC Users manual 87C196KD Users manual MCS51 Manual 87C196KD20 8XC196KC Users Guide 8XC196KD users manual 87C196MH MCS-96 Users guide
Text: ZapCode II Handbook A Guide to Electronic ROM-code Transmittal ZapCode II Handbook December 1995 Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of
|
Original
|
|
PDF
|
DIODE S45
Abstract: BAS40ADW BAS40CDW BAS40SDW BAS40TW SC70-6L DIODE S43 S44 MARKING marking s43 marking S45
Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA
|
Original
|
BAS40TW/ADW/CDW/SDW/RDW
OT-363
SC70-6L)
BAS40TW
BAS40ADW
BAS40CDW
BAS40xxx
T/R13
DIODE S45
BAS40ADW
BAS40CDW
BAS40SDW
BAS40TW
SC70-6L
DIODE S43
S44 MARKING
marking s43
marking S45
|
PDF
|
|
|
S43 MARKING
Abstract: No abstract text available
Text: BAS40TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 2 Maximum leakage current @ 25V of 1.0uA
|
Original
|
BAS40TW/ADW/CDW/SDW
OT-363
SC70-6L)
BAS40TW
BAS40ADW
BAS40CDW
BAS40SDW
2012-REV
S43 MARKING
|
PDF
|
S43 MARKING
Abstract: S44 MARKING marking S45
Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA
|
Original
|
BAS40TW/ADW/CDW/SDW/RDW
OT-363
SC70-6L)
2002/95/EC
BAS40TW
BAS40ADW
BAS40CDW
BAS40SDW
BAS40RDW
BAS40xxx
S43 MARKING
S44 MARKING
marking S45
|
PDF
|
handbook of shipboard electromagnetic shielding practices
Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Text: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command
|
Original
|
S9407-AB-HBK-010
S9407-AB-HBK-010,
S9407-AB-HBK-010
03Z44,
05H31,
08K/CHABAY)
PMS303A41,
handbook of shipboard electromagnetic shielding practices
ASTM-A-753
MIL-B-857
MIL-STD-463
s41 hall effect sensor s41
hall effect sensor s41
s41 hall effect sensor
S9300-AW-EDG-010
Bendix synchro control transformer
MIL-C-915
|
PDF
|
2322 712
Abstract: CL9100
Text: Product specification Philips Components 9C12063A.J 2322 711 . Resistor Chip Size 1206 5% FEATURES Reduced size of final equipment QUICK REFERENCE DATA Resistance Range 10 to 10 MO; E24 Series and Jumper (0 O) Resistance Tolerance ±5% Temperature Coefficient
|
OCR Scan
|
9C12063A.
2322 712
CL9100
|
PDF
|
S44 MARKING
Abstract: marking code aw BAS40SW BAS40AW BAS40AW-T1 BAS40CW BAS40CW-T1 BAS40SW-T1 BAS40W BAS40W-T1
Text: BAS40W / AW / CW / SW WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability
|
Original
|
BAS40W
OT-323,
MIL-STD-202,
OT-323
S44 MARKING
marking code aw
BAS40SW
BAS40AW
BAS40AW-T1
BAS40CW
BAS40CW-T1
BAS40SW-T1
BAS40W-T1
|
PDF
|
BAS40
Abstract: BAS40A BAS40A-T1 BAS40C BAS40C-T1 BAS40S BAS40S-T1 BAS40-T1 s43 SOT23 S43 sot
Text: BAS40 / A / C / S WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability
|
Original
|
BAS40
OT-23,
MIL-STD-202,
OT-23
BAS40A
BAS40A-T1
BAS40C
BAS40C-T1
BAS40S
BAS40S-T1
BAS40-T1
s43 SOT23
S43 sot
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS40W / AW / CW / SW SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Single and Dual Diode Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
|
Original
|
BAS40W
OT-323,
MIL-STD-202,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS40 / A / C / S WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage L Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability
|
Original
|
BAS40
OT-23,
MIL-STD-202,
OT-23
|
PDF
|
bas40sw
Abstract: S4345
Text: BAS40W / AW / CW / SW WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage L Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability
|
Original
|
BAS40W
OT-323
OT-323,
MIL-STD-202,
bas40sw
S4345
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS40W / AW / CW / SW WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage L Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability
|
Original
|
BAS40W
OT-323,
MIL-STD-202,
OT-323
|
PDF
|
