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    MARKING CODE S1A SOT23 Search Results

    MARKING CODE S1A SOT23 Result Highlights (1)

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    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE S1A SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    infineon marking code E1 sot23

    Abstract: mmbt3904 complementary SMBT3904U SMBT3906 MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S infineon marking code B2 SOT23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3904S/U EHA07178 SMBT3904/MMBT3904 infineon marking code E1 sot23 mmbt3904 complementary SMBT3904U SMBT3906 MMBT3904 MMBT3906 SC74 SMBT3904 infineon marking code B2 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/MMBT3904

    mmbt3904 complementary

    Abstract: MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S SMBT3904U SMBT3906 infineon marking code B2 SOT23 S1A SOT23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/ mmbt3904 complementary MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904U SMBT3906 infineon marking code B2 SOT23 S1A SOT23

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/

    sot23 s1a marking

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 E6433 sot23 s1a marking

    sot23 s1a marking

    Abstract: marking code S1A sot23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363

    3904 TRANSISTOR PNP

    Abstract: 3904 transistor 3904 H12E 3904 NPN 3904 SOT tr 3904 3904 transistor transistor 3904 npn datasheet transistor marking s1a
    Text: NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3906 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3904


    Original     		PDF Q68000-A4416 OT-23 3904 TRANSISTOR PNP 3904 transistor 3904 H12E 3904 NPN 3904 SOT tr 3904 3904 transistor transistor 3904 npn datasheet transistor marking s1a

    S1A MARKING CODE

    Abstract: marking code S1A sot23 H12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 S1A MARKING CODE marking code S1A sot23 H12E

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 40 Volts SOT-23 225 mWatts Unit：inch mm • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) 0.006(0.15)MIN. FEATURES • / 


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz OT-23 OT-23, MIL-STD-750,

    MMBT3904

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC IEC61249 OT-23 OT-23, MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA


    Original     		PDF MMBT3904-AU OT-23 200mA 300MHz 10mAdc, 20Vdc 100MHz TS16949 AEC-Q101 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 OT-23 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC IEC61249 OT-23,

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz FTLUHTXDOLW\V\VWHPFHUWLILFDWH76 2002/95/EC IEC61249 OT-23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    LTYB

    Abstract: ltc833 LTYB MARKING non electrolytic capacitor esl esr
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA 900kHz LTC1983-5 TSOT-23 254mm MO-193 1983fa LTYB ltc833 LTYB MARKING non electrolytic capacitor esl esr

    LTC1429

    Abstract: No abstract text available
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 LTC1928-5 LTC3200 LTC1429

    LTC1983-5

    Abstract: JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 Step-up 1.2V to 3V 60mA SOT-23 Vin 12v charge pump sot LTC1429
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 LTC1928-5 LTC3200 LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 Step-up 1.2V to 3V 60mA SOT-23 Vin 12v charge pump sot LTC1429

    JMK316BJ106ML

    Abstract: LTC1983-3 LTC1983-5 LTC1983ES6-3 LTC1983ES6-5 "marking s1a" sot-23 LTC1429
    Text: Final Electrical Specifications LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT August 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy


    Original     		PDF LTC1983-3/LTC1983-5 100mA LTC1983-3) LTC1983-5) 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 JMK316BJ106ML LTC1983-3 LTC1983-5 LTC1983ES6-3 LTC1983ES6-5 "marking s1a" sot-23 LTC1429

    LTC1429

    Abstract: FET MARKING MO sot-23 ltc833 LTC1983ES6-5
    Text: Final Electrical Specifications LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT August 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy


    Original     		PDF LTC1983-3/LTC1983-5 100mA LTC1983-3) LTC1983-5) 900kHz LTC1983-5 OT-23 254mm SC-74A LTC1429 FET MARKING MO sot-23 ltc833 LTC1983ES6-5

    marking code S6 SOT-23

    Abstract: LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 LTC1429
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA LTC1983-3) LTC1983-5) 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 marking code S6 SOT-23 LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 LTC1429

    LTC1983-5

    Abstract: JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 LTC1429
    Text: LTC1983-3/LTC1983-5 100mA Regulated Charge-Pump Inverters in ThinSOT U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Fixed Output Voltages: –3V, –5V or Low Noise VIN to –VIN Inverted Output ±4% Output Voltage Accuracy Low Quiesient Current: 25µA


    Original     		PDF LTC1983-3/LTC1983-5 100mA LTC1983-3) LTC1983-5) 900kHz LTC1983-3/LTC1983-5 LTC1751/-3 100mA; LTC1754/-3 LTC1983-5 JMK316BJ106ML LTC1983-3 LTC1983ES6-3 LTC1983ES6-5 LTC1429

    3904

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration


    OCR Scan     		PDF Q68000-A4416 OT-23 D1EE537 0235bGS fi535fc 01EBS3T 3904

    3904

    Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
    Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*


    OCR Scan     		PDF 68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23