MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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Original
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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PDF
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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Original
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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PDF
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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Original
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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PDF
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1117G
Abstract: Q62702-F1493 GMA marking IC456
Text: BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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OT-323
Q62702-F1493
900MHz
Dec-11-1996
1117G
Q62702-F1493
GMA marking
IC456
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PDF
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Q62702-F1503
Abstract: marking 17 sot343 ZL 58
Text: BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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OT-343
Q62702-F1503
900MHz
Dec-12-1996
Q62702-F1503
marking 17 sot343
ZL 58
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PDF
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Q62702-F1594
Abstract: transistor marking RHs
Text: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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OT-143R
Q62702-F1594
900MHz
Jan-21-1997
Q62702-F1594
transistor marking RHs
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PDF
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Transistor BFR 14
Abstract: Q62702-F1316 SIEMENS marking
Text: BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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OT-23
Q62702-F1316
Dec-11-1996
Transistor BFR 14
Q62702-F1316
SIEMENS marking
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PDF
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sot143 Marking code RHs
Abstract: Q62702-F1382
Text: BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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OT-143
Q62702-F1382
900MHz
Dec-13-1996
sot143 Marking code RHs
Q62702-F1382
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PDF
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Untitled
Abstract: No abstract text available
Text: V ishay I n tertech n o l o g y, I n c . Capacitors - Radial Aluminum, Miniaturized, High-CV I INNOVAT AND TEC O L OGY 142 RHS N HN VISHAY BCcomponents O 19 62-2012 142 RHS Radial Aluminum Capacitors for High-Temperature Standard Applications Key Benefits
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Original
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VMN-PT0171-1204
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PDF
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SPICE 2G6
Abstract: No abstract text available
Text: BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs
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Original
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BFP183R
OT143R
SPICE 2G6
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PDF
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . 142 RHS M A L 2142.E3 KEY BENEFITS • Miniaturized, high-CV products per unit volume • Electronic circuits in industrial and SMPS products • Compliant to RoHS directive 2002/95/EC • Filtering of unwanted noise
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Original
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2002/95/EC
14tual
VMN-PT0171-1007
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PDF
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uf41
Abstract: AT350V
Text: RHS GREEN CAP 105˚C Use, Miniature, High-Ripple, Long Life Capacitors ● ● ● MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS 105˚C 5000hours Higher ripple current. Guarantees 4000 to 5000 hours at 105℃. Best-suited to electronic ballast. High ripple, Long life
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Original
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5000hours
120Hz)
1000Less
06CV40
03CV70
120Hz
2010/2011E
uf41
AT350V
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PDF
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142 RHS
Abstract: No abstract text available
Text: 142 RHS Vishay BCcomponents Aluminum Capacitors Radial High Temperature Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm
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Original
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2002/95/EC
18-Jul-08
142 RHS
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PDF
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142 RHS
Abstract: No abstract text available
Text: 142 RHS Vishay BCcomponents Aluminum Capacitors Radial High Temperature Standard FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥ 6.3 mm
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Original
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2002/95/EC
18-Jul-08
142 RHS
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PDF
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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OCR Scan
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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PDF
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1s211
Abstract: 2I k
Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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Q62702-F1594
OT-143R
900MHz
1S211
2I k
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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BFP183W
Q62702-F1503
OT-343
fiE35bQ5
900MHz
c15mA
fl535b05
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PDF
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BFR183W
Abstract: No abstract text available
Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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Q62702-F1493
OT-323
900MHz
BFR183W
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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Q62702-F1382
OT-143
235bQ5
BFP183
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-F1316
OT-23
BFR183
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs
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OCR Scan
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BFP183R
Q62702-F1594
OT-143R
76VBE
900MHz
a535fc
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PDF
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sot143 Marking code RHs
Abstract: IC 1296
Text: SIEMENS BFP 183 NPN Silicon RF T ransistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1382 1=C m BFP 183 f\3 II ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-F1382
OT-143
BFP183
900MHz
sot143 Marking code RHs
IC 1296
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PDF
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Q62702-F1503
Abstract: No abstract text available
Text: SIEMENS BFP.183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1503 1 =E o BFP 183W N II ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-F1503
OT-343
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: 6367251 MO T O R O L A SC MEMORY / AS I C j y T Q .R 0 L A S C iriE H O R Y /A S IC > * WlBmiïSÊBmâËSSÈItSfiB$$KE&RHsK!eBmiBmmam 65638 bM TZtt6 ~ 1 3 -/5 ' ° D E li7 3 b 7 2 S l M C M 0DbSâ3fl _) h 6 8 3 6 9 Advance Inform ation NMOS (N-CHANNEL, SILICON GATE)
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OCR Scan
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MCM68369
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PDF
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