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    MARKING CODE RFS Search Results

    MARKING CODE RFS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE RFS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501

    Q62702-F1491

    Abstract: GMA marking 175fF
    Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-323 Q62702-F1491 Dec-11-1996 Q62702-F1491 GMA marking 175fF

    Q62702-F1271

    Abstract: No abstract text available
    Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-143 Q62702-F1271 Dec-11-1996 Q62702-F1271

    Q62702-F1314

    Abstract: No abstract text available
    Text: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-23 Q62702-F1314 Dec-11-1996 Q62702-F1314

    BFP 181R

    Abstract: IC 7449 Q62702-F1685 SIEMENS marking
    Text: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-143R Q62702-F1685 Jan-21-1997 BFP 181R IC 7449 Q62702-F1685 SIEMENS marking

    Untitled

    Abstract: No abstract text available
    Text: RFS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS FOR AUDIO ELNA developed new raw material for the separate paper which use a silk fibers. Therefore, this capacitor can give you high grade sound for your audio design.


    Original     		PDF 120Hz 2013/2014E

    MAT-21-1038

    Abstract: RFSA2614SR UMK105BJ102KV C18-C20
    Text: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 504000 MHz, 6Bit, 0.5 dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50-4000MHz, 6-BIT, 0.5dB LSB Features  Frequency Range 50MHz to 4000MHz C1 C2 C4 C8 C16 C0.5 Package: QFN, 24-Pin, 4mmx4mm


    Original     		PDF RFSA2614 RFSA2614Parallel 50-4000MHz, 24-Pin, 50MHz 4000MHz 49dBm MAT-21-1038 MPSS100-9-C RFSA2614SB MAT-21-1038 RFSA2614SR UMK105BJ102KV C18-C20

    MAT-21-1038

    Abstract: MPSS100-9-C
    Text: RFSA2614Parallel Controlled Digital Step Attenuator 504000 MHz, 6Bit, 0.5 dB LSB RFSA2614 Preliminary PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50-4000MHz, 6-BIT, 0.5dB LSB Features   Frequency Range 50MHz to 4000MHz 6-Bits, 31.5dB Range, 0.5dB Step


    Original     		PDF RFSA2614Parallel RFSA2614 50-4000MHz, 24-Pin, 50MHz 4000MHz 48dBm 700MHz 2700MHz MAT-21-1038 MAT-21-1038 MPSS100-9-C

    WiMAX RF CMOS Transceiver

    Abstract: SA2614 C18-C20
    Text: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 50MHz to 4000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 6-BIT, 0.5dB N/C 1 Vcc 2 N/C 3 6 Bits, 31.5dB Range, 0.5dB Step RF1 4  High Linearity, IIP3 >49dBm


    Original     		PDF RFSA2614Parallel 50MHz 4000MHz, RFSA2614 24-Pin, 4000MHz 49dBm WiMAX RF CMOS Transceiver SA2614 C18-C20

    rfsa2614

    Abstract: C18-C20 trace code decoder RFMD
    Text: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 504000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50-4000MHz, 6-BIT, 0.5dB LSB  3V and 5V Logic Compatible  On-chip Parallel Decoder  Parallel Programming Interface


    Original     		PDF RFSA2614Parallel 504000MHz, RFSA2614 50-4000MHz, 24-Pin, 50MHz 4000MHz 49dBm SA26x4410 GRM155R71H681KA01E rfsa2614 C18-C20 trace code decoder RFMD

    Untitled

    Abstract: No abstract text available
    Text: RFSA2614 RFSA2614Parallel Controlled Digital Step Attenuator 50MHz to 4000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 6-BIT, 0.5dB N/C 1 Vcc 2 N/C 3 6 Bits, 31.5dB Range, 0.5dB Step RF1 4  High Linearity, IIP3 >49dBm


    Original     		PDF RFSA2614 RFSA2614Parallel 50MHz 4000MHz, 49dBm 24-Pin, C18-C20, SSOP-28

    BF989

    Abstract: 62702-F969
    Text: Silicon N Channel MOSFET Tetrode • • BF 989 For am plifier and m ixer stages in UHF and VHF TV tuners Low input and o u tp u t capacitance Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF989 MA Q62702-F874


    OCR Scan     		PDF BF989 Q62702-F874 62702-F969 1BB505 B6505, 836MH2jj) 800MHz BF989 62702-F969

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1501 OT-343

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF BFP181R 900MHz Q62702-F1685 OT-143R 235fc

    Transistor BFR 181w

    Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
    Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1491 OT-323 Transistor BFR 181w GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1314 OT-23 Junctio30 Q122DÃ BFR181 IS21I2 E35bD5

    TSE 151

    Abstract: No abstract text available
    Text: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications


    OCR Scan     		PDF ERC01 Jlrt54] l95t/R89 TSE 151

    R820t

    Abstract: No abstract text available
    Text: H rfs e J a hre JAHR E-Induktivitaten werden in verschiedenen Bauformen mit axialen und radialen Anschlussen in festen und abstimmbaren Werten hergestellt. Die einlagigen Oder mehrlagigen W icklungen werden auf Isolierstoff-, Eisenpulver- Oder i-errit-Kernen gewickelt. Die


    OCR Scan     		PDF D-5683 D-1000 184119jahred D-2448 R820t

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP181R Q62702-F1685 OT-143R BFP181R

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1314 OT-23 BFR181

    DB-1MS

    Abstract: No abstract text available
    Text: SIEMENS BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz Q62702-F1271 1=C It RFs m B F P 181 PO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1271 OT-143 DB-1MS