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    MARKING CODE M7A Search Results

    MARKING CODE M7A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE M7A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M7A transistor

    Abstract: transistor M7A MARKING CODE M7A
    Text: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR 60 Volts POWER SOT-23 225 mWDWWV Unit：inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) PNP epitaxial silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA 0.103(2.60)


    Original     		PDF MMBT2907A OT-23 -600mA OT-23 MIL-STD-750 RB500V-40 M7A transistor transistor M7A MARKING CODE M7A

    Untitled

    Abstract: No abstract text available
    Text: MMDT2907A DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60 Volts POWER 150 mW FEATURES 0.087 2.20 0.074(1.90) • PNP epitaxial silicon, planar design 0.010(0.25) • Collector-emitter voltage VCE = -60V • Collector current IC = -600mA •/ 


    Original     		PDF MMDT2907A -600mA OT-363 MIL-STD-750 2010-REV

    MMBT2907A

    Abstract: M7A transistor transistor M7A M7A MARKING SOT-23
    Text: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 60 Volts POWER 225 mWDWWV PNP epitaxial silicon, planar design 0.006 0.15 MIN. FEATURES 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = -60V Collector current IC = -600mA / 


    Original     		PDF MMBT2907A -600mA OT-23 MIL-STD-750 MMBT2907A M7A transistor transistor M7A M7A MARKING SOT-23

    M7A transistor

    Abstract: transistor M7A
    Text: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)


    Original     		PDF MMBT2907AW -600mA 2002/95/EC IEC61249 OT-323 OT-323 MIL-STD-750 M7A transistor transistor M7A

    Untitled

    Abstract: No abstract text available
    Text: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)


    Original     		PDF MMBT2907AW OT-323 -600mA 2002/95/EC IEC61249 MIL-STD-750

    NL27WZ07

    Abstract: diode dc components m7 footprint A114 A115 C101 JESD22 NL27WZ07DFT2G
    Text: NL27WZ07 Dual Buffer with Open Drain Outputs The NL27WZ07 is a high performance dual buffer with open drain outputs operating from a 1.65 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level.


    Original     		PDF NL27WZ07 NL27WZ07 NL27WZ07/D diode dc components m7 footprint A114 A115 C101 JESD22 NL27WZ07DFT2G

    MVME167

    Abstract: MVME-162-522 MVME162 battery problem VMEbus MVME-166 MVME162-522A MVME162 mvme VME System Controller MVME167A
    Text: q q q r r s s s q r q r q s s r s u s q r u u r s s u u q r q s s r u s s u r q q r u u s s r q q r u u s s r s s r s s s q q r r r r r q q q q q q q r r European Synchrotron Radiation Facility installation europeenne de rayonnement synchrotron E.S.R.F. MVME-167 162


    Original     		PDF MVME-167 MVME167 MVME-162 MVME-162 Mbug-16x Mbug-16x MVME-162-522 MVME162 battery problem VMEbus MVME-166 MVME162-522A MVME162 mvme VME System Controller MVME167A

    Untitled

    Abstract: No abstract text available
    Text: IGLOO nano Handbook IGLOO nano Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOO nano Datasheet IGLOO nano Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I


    Original     		PDF

    origin SEMICONDUCTOR

    Abstract: No abstract text available
    Text: IGLOO nano Handbook IGLOO nano Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOO nano Datasheet IGLOO nano Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD4M16 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Full Military temp (-55°C to 125°C) processing available • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD4M16 54-Pin 096-cycle -55oC 125oC

    AS4SD4M16DG-8IT

    Abstract: No abstract text available
    Text: SDRAM AS4SD4M16 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Full Military temp (-55°C to 125°C) processing available • Copper lead frame option for enhanced reliability • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK


    Original     		PDF AS4SD4M16 096-cycle 54-Pin AS4SD4M16 -40oC -55oC 125oC AS4SD4M16DG-8IT

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD4M16 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD4M16 096-cycle AS4SD4M16 AS4SD4M16DG-10/IT -40oC -55oC 125oC

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD4M16 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES 54-Pin TSOP • Full Military temp (-55°C to 125°C) processing available • WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD4M16 096-cycle AS4SD4M16DGCR-10/ET 54-pin AS4SD4M16DGCR-10/XT AS4SD4M16 -40oC -55oC 125oC

    powerpc 405

    Abstract: CHN 628 marking code H5C SMD Transistor mac 7a8 transistor PowerISA 203
    Text: MPC5744P Reference Manual Document Number: MPC5744PRM Rev. 2, 06/2013 Preliminary MPC5744P Reference Manual, Rev. 2, 06/2013 2 Preliminary Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 Preface 1.1


    Original     		PDF MPC5744P MPC5744PRM powerpc 405 CHN 628 marking code H5C SMD Transistor mac 7a8 transistor PowerISA 203

    DCR 804 SG 2121

    Abstract: AMCC 405 DATE CODE MARKING PPC405EX Philips CDM3 104 esm marking PBEI 2322 157 11023 PHILIPS 28548 philips CDM4 SM 87719
    Text: Part Number 405EX Revision 1.13 - February 21, 2008 405EX Preliminary User’s Manual PPC405EX Embedded Processor PPC405EX Embedded Processor User’s Manual Special Note: The PPC405 processor information has been removed from this book and placed in a separate


    Original     		PDF 405EX 405EX PPC405EX PPC405 DCR 804 SG 2121 AMCC 405 DATE CODE MARKING Philips CDM3 104 esm marking PBEI 2322 157 11023 PHILIPS 28548 philips CDM4 SM 87719

    vhdl code for aes decryption

    Abstract: No abstract text available
    Text: IGLOOe Handbook IGLOOe Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOOe Datasheet IGLOOe Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IGLOO Handbook IGLOO Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOO Datasheet IGLOO Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I


    Original     		PDF

    LTC3025

    Abstract: No abstract text available
    Text: IGLOO nano Handbook IGLOO nano Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOO nano Datasheet IGLOO nano Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I


    Original     		PDF

    bm 308 an

    Abstract: ICE 10501 TRANSISTOR MARKING YB 826
    Text: IGLOOe Handbook IGLOOe Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOOe Datasheet IGLOOe Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I


    Original     		PDF

    arm7 instruction cycles

    Abstract: ulsi JESD8-12A part marking b36 diode
    Text: IGLOO Handbook IGLOO Handbook Table of Contents Low-Power Flash Device Handbooks Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i Section I – IGLOO Datasheet IGLOO Low-Power Flash FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD4M16 Austin Semiconductor, Inc. 4 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory FEATURES • • • • • • • • • • • • • OPTIONS • • • • 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C


    Original     		PDF AS4SD4M16 54-Pin 096-cycle AS4SD4M16DG-10/IT -40oC

    M7A transistor

    Abstract: transistor M7A Q62702-C2340
    Text: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		PDF Q62702-C2340 OT-23 0235bD5 235b05 fl235b05 M7A transistor transistor M7A Q62702-C2340

    12.696

    Abstract: No abstract text available
    Text: MF Series Surface Mount Low Profile Horizontal Chip Solvent Proof +85°C Maximum Temperature The MFseries are the standard low profile, surface mount capacitors from United Chemi-Con. These horizontal chip type capacitors are designed for reflow soldering, and the terminals can be seen from


    OCR Scan     		PDF MOUNT-85 MF35FC1R5MA6 MF4FC33RMC6 120Hz) MF35FC10RMD8 MF25FC33RMD13 12.696

    Untitled

    Abstract: No abstract text available
    Text: blUSHÌ 0010113 OTñ n RN M IC R O N I MT43C8128A/9A 128K X 8 TRIPLE-PORT DRAM SEViCONDUCtCR ISC. 128K x 8 DRAM WITH DUAL 256 x 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports


    OCR Scan     		PDF MT43C8128A/9A 512-cycle