Q62702-F979
Abstract: BF599
Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter
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Q62702-F979
OT-23
Iy21e
Q62702-F979
BF599
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SAW MARKING CODE SOT-23
Abstract: No abstract text available
Text: NPN Silicon RF Transistor • • BF 799 Suitable for broadband RF amplifiers up to 500 MHz in the high tuning range Particularly suitable for SAW filter driver application in TV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape
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Q62702-F788
Q62702-F935
SAW MARKING CODE SOT-23
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vishay siliconix code marking
Abstract: No abstract text available
Text: _ Sii 301 DL Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS(on) (£2) lD (mA) 3.8 e VGS = -4.5 V -180 5.0 9 VGs = -2 5 V -100 V DS(V) -20 Marking Code r LG XX £ Lot Traceability and Date Code
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S-01830--
21-Aug-00
S-01830--Rev.
vishay siliconix code marking
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Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
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HAL628
Abstract: 004-G intermetall 638UA
Text: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
638UA,
HAL638S
4083ion
HAL628
004-G
intermetall
638UA
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Silicon N Channel MOSFET Tetrode
Abstract: No abstract text available
Text: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F1613
OT-143
800MHz
Silicon N Channel MOSFET Tetrode
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170
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023b3BQ
001bS43
BAV170
Q62702-A920
T-01-09
23b32Ã
001b54b
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diode code ae 89A
Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Text: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.
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6251-345-4PD
HAL300
diode code ae 89A
diode AE 89A
377 hall sensor
ITT INTERMETALL
ITT semiconductors
ITT 30 15 an 220
diode ITT specification
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itt ol 170
Abstract: No abstract text available
Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch
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HAL114
HAL114S
HAL114UA
4bfiZ711
itt ol 170
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marking code 8fn
Abstract: No abstract text available
Text: PNP Silicon High-Voltage Transistors BFN 37; BFN 39 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Complementary types: BFN 36/38 NPN Type Marking O rdering code (12-m m tape)
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Q62702-
F1304
F1305
OT-223
OT-223
marking code 8fn
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BF450
Abstract: BF451 BF 450 IY21 Q62702-F312 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451
Text: SIEMENS BF 450 BF 451 PNP Silicon RF Transistors • For common emitter AM and FM stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 450 BF 451 - Q62702-F312 Q62702-F313 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings
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Q62702-F312
Q62702-F313
0235bG5
235b05
00bb7fc
10MHz
BF450
BF451
BF 450
IY21
SIEMENS marking
IC marking jw
SiEMENS PM 350 92
bf 451
tag 451
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Untitled
Abstract: No abstract text available
Text: ERB35 ia I Outline Drawings FAST RECOVERY DIODE : Features • iê/K : Marking Soft recovery, low noise • A f t f f i't i High reliability * —3 — K $ Cole r code : Applications Abridged type n am e^' DP f t -> Silver s. 1 ^ O ÍV - Í- 'T - Í ft-
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ERB35(
I95t/R89)
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sm403
Abstract: sot363 marking qs 71072
Text: SM403PL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY Vps(V) Id (A) r D S (o n) ( ^ ) 0.180 @ VG S= —4.5 V -2 0 VP ± 1 .5 0.200 @ VGS = -3 .6 V ± 1 .4 0.265 @ VGS = -2 .5 V ± 1 .2 A <0* SOT-363 SC-70 (6-LEADS) Marking Code
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SM403PL
OT-363
SC-70
S-01559--
17-Jul-00
SM403DL
sm403
sot363 marking qs
71072
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DIODE S2v 73
Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
Text: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w
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S2V20
S2V20
S2V60
DIODE S2v 73
DIODE in s2v
shindengen rectifier
SHINDENGEN DIODE
DIODE S2v 50
DIODE S2v
S2V60
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diode tfk s 220
Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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S1000
O888E
T0126
15A3DIN
diode tfk s 220
tfk s 220
diode 12A3
rg4 77 diode
tfk s 92
TFK diode
tfk 3b
tfk transistor
Tfk 237
TCA 321
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rss tyohm
Abstract: TYOHM RS-196A
Text: IY o h K Unauthorized duplication is prohibited RSN METAL OXIDE FILM RESISTORS, FLAMEPROOF 1. Applicable Scope: This RSN standard specification is for use in consumer electronics, computers, telecommunications, control instruments.etc. 2. Part Number: It is composed by Type, Rated Wattage, Terminal Form, Nominal Resistance, Tolerance
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32max
rss tyohm
TYOHM
RS-196A
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diplexer
Abstract: No abstract text available
Text: NO.MLPGE10023 SPECIFICATIONS H IG H F R E Q U E N C Y M U L T IL A Y E R C H IP F IL T E R FI 212P089208-T T A IY O Y U D E N C O ., LTD. Date:23.Aug.2010 HIGH FREQUENCY MULTILAYER CHIP Table of Contents 1. Scope 2. Part Numbering System 3. Electrical specification
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MLPGE10023
212P089208-T
diplexer
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resistant to oil
Abstract: No abstract text available
Text: C -iype Markers - Conductors up to 14.5 mm .57” Description: C-Type Cable Markers are a clip-on type, specifically designed for applications after the solder connection has been made or solderless terminal has been attached. They may be removed at any time for re-coding without break
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symboD09-A
CWD09-Z
CWDH09-A-M
CWDH09-N-Z
CWD09
CWD09-
CWD12-0
CWD12-9
CWDC012
CWD012-A
resistant to oil
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Untitled
Abstract: No abstract text available
Text: No. P R O D U C T S P E C IF IC A T IO N P /N : F I2 1 2 L 0 6 2 0 0 3 -T Type: M U L T IL A Y E R F IL T E R S o ld e rin g : R e flo w o n ly Issue d a te : 14.Feb.2011 A p p lic a b le p ro d u cts to R oH S re strictio n T A IY O Y U D E N C O ., LTD .
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IP40G
Abstract: NL7976B NL792B IP60G 283X114X0
Text: DRAWING NUMBER: REVISION REV. ECR REF. NO. A 1107509 DESCRIPTION DATE 19/06/07 RELEASE FOR PRODUCTION W.E.F. ASSEMBLY 2000±50 UVE BROWN UVE(BROWN) iff N £ « k Ff _ ^ fiiri "N . m iy NEUTRAL{BLUE) c m 1 ü — •■■■ ir. ] c) NEUTRAL(BLUE) LABEL ART 45X25 321219
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45X25
283X114X0
IP60G
NL7976B
VSC19
IP40G
NL792B
VAC20S
VAC20S
HGC6-223-07
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Untitled
Abstract: No abstract text available
Text: NO.MLPGE10011 SPECIFICATIONS H IG H F R E Q U E N C Y M U L T IL A Y E R C H IP F IL T E R FI 212B245027-T T A IY O Y U D E N C O ., LTD . Date: 30.Apr.2010 HIGH FREQUENCY MULTILAYER CHIP FILTER Table of Contents 1. Scope 2. Part Numbering System 3. Electrical specification
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MLPGE10011
212B245027-T
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Untitled
Abstract: No abstract text available
Text: AE032X100137 Ver. 1.02 SPECIFICATION POWER INDUCTOR NRS5020 TYPE Magnetic Shielded Type T Â IY O Y U D E N AE032X100137V102 S p e c ific a t io n s NRS5020TYPE 1/13 1. Range of application This specifications are applied to Power Inductor, NRS5020. 2. Ordering code
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AE032X100137
NRS5020
AE032X100137V102
NRS5020TYPE
NRS5020.
100KHz,
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t con
Abstract: No abstract text available
Text: THIRD ANGL E P R O J E C T I O N ~|~ a S I D E ( b ) f R5 i E C Q U A 1 0 4 « i o ^ 275 X2c % n ( N ote )O n Iy ±10% as o r ( c ) □ S I D E K Î d a t e c a p a c ita n c e t o le ra n c e to c o d e be marked as K" No t e When a p p l y i n g in The
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A003B-J-E
t con
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10sv10
Abstract: 10SV10MN 10SV10M a5 marking marking A5
Text: I . SPECIFICATIONS OF OSCON IN SERIES SA/iYO sv Vertical Surface Mounting Devices SV Series is designed for use in miniaturised high frequency noise limiters and switching power supplies ; compatible with Aluminum electrolytic capacitors of Vertical chip.
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120Hz)
300kHz)
100kHz,
D00Hrs.
10sv10
10SV10MN
10SV10M
a5 marking
marking A5
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