RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: Q62702-F1575 marking 17 sot343
Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-343
Q62702-F1575
900MHz
Jan-20-1997
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1575
marking 17 sot343
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Transistor BFT 93
Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package
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OT-23
Q62702-F1063
Dec-12-1996
Transistor BFT 93
Transistor BFT 10
Q62702-F1063
MARKING 93
40mAIC
BFT93
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Transistor BFT 92W
Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-323
Q62702-F1681
900MHz
Dec-11-1996
Transistor BFT 92W
30227
Transistor BFT 10
transistor BFt 65
Q62702-F1681
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30227
Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-23
Q62702-F1062
900MHz
Dec-13-1996
30227
Transistor BFT 10
Q62702-F1062
w1s sot23
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Q62702-F1396
Abstract: BF 182 transistor
Text: BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143
Q62702-F1396
Dec-12-1996
Q62702-F1396
BF 182 transistor
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IC 2272
Abstract: Q62702-F1601 GMA marking
Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143R
Q62702-F1601
Jan-21-1997
IC 2272
Q62702-F1601
GMA marking
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MJE 340 transistor
Abstract: Q62702-F1501
Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-343
Q62702-F1501
Aug-30-1996
MJE 340 transistor
Q62702-F1501
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Q62702-F1491
Abstract: GMA marking 175fF
Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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900MHz
OT-323
Q62702-F1491
Dec-11-1996
Q62702-F1491
GMA marking
175fF
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Q62702-F1271
Abstract: No abstract text available
Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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900MHz
OT-143
Q62702-F1271
Dec-11-1996
Q62702-F1271
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BFR 182 transistor
Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
Text: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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900MHz
OT-23
Q62702-F1315
Sep-04-1996
BFR 182 transistor
Transistor BFR 900mhz
BF 182 transistor
Transistor BFR 93
F131
Q62702-F1315
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transistor marking R2s
Abstract: Q62702-F1489
Text: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-323
Q62702-F1489
900MHz
Dec-11-1996
transistor marking R2s
Q62702-F1489
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NR SOT-143
Abstract: ta 8742 IC Q62702-F1282
Text: BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143
Q62702-F1282
Dec-13-1996
NR SOT-143
ta 8742 IC
Q62702-F1282
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marking 93A
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144
Text: BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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Original
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OT-143
Q62702-F1144
900MHz
Dec-16-1996
marking 93A
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1144
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Transistor BFR 90
Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-323
Q62702-F1510
Dec-11-1996
Transistor BFR 90
F1510
Q62702-F1510
Transistor BFR 900mhz
193W
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Q62702-F1577
Abstract: 193W
Text: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-343
Q62702-F1577
Dec-12-1996
Q62702-F1577
193W
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Q62702-F1314
Abstract: No abstract text available
Text: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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900MHz
OT-23
Q62702-F1314
Dec-11-1996
Q62702-F1314
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Transistor BFR 38
Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
Text: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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900MHz
OT-23
Q62702-F1218
Dec-11-1996
Transistor BFR 38
Q62702-F1218
marking code ne sot 23
K 193 transistor
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BFP 181R
Abstract: IC 7449 Q62702-F1685 SIEMENS marking
Text: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143R
Q62702-F1685
Jan-21-1997
BFP 181R
IC 7449
Q62702-F1685
SIEMENS marking
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BFG194
Abstract: Q62702-F1321 BFG 38
Text: BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OT-223
BFG194
Q62702-F1321
Aug-22-1996
Q62702-F1321
BFG 38
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marking 93A
Abstract: Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz
Text: BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OT-23
Q62702-F1086
900MHz
Dec-12-1996
marking 93A
Q62702-F1086
marking code R2S sot23
BFR93A
marking R2s
GMA marking
Transistor BFR 900mhz
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IC 2272
Abstract: Q62702-F1502
Text: BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Original
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900MHz
OT-343
Q62702-F1502
Dec-12-1996
IC 2272
Q62702-F1502
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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Q62702-F780
fl235fc
BFQ69
DDb71D3
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BFq69
Abstract: BFQ 58 ts102
Text: SIEMENS NPN Silicon RF Transistor BFQ 69 • For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F780
BFQ69
EHT07562
EHT07561
EHTQ7564
BFq69
BFQ 58
ts102
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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PDF
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900MHz
Q62702-F1492
OT-323
IS211
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