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    MARKING CODE IP3 Search Results

    MARKING CODE IP3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE IP3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: Q62702-F1575 marking 17 sot343
    Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF OT-343 Q62702-F1575 900MHz Jan-20-1997 RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1575 marking 17 sot343

    Transistor BFT 93

    Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
    Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package


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    PDF OT-23 Q62702-F1063 Dec-12-1996 Transistor BFT 93 Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93

    Transistor BFT 92W

    Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
    Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF OT-323 Q62702-F1681 900MHz Dec-11-1996 Transistor BFT 92W 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23

    Q62702-F1396

    Abstract: BF 182 transistor
    Text: BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-143 Q62702-F1396 Dec-12-1996 Q62702-F1396 BF 182 transistor

    IC 2272

    Abstract: Q62702-F1601 GMA marking
    Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-143R Q62702-F1601 Jan-21-1997 IC 2272 Q62702-F1601 GMA marking

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501

    Q62702-F1491

    Abstract: GMA marking 175fF
    Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-323 Q62702-F1491 Dec-11-1996 Q62702-F1491 GMA marking 175fF

    Q62702-F1271

    Abstract: No abstract text available
    Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-143 Q62702-F1271 Dec-11-1996 Q62702-F1271

    BFR 182 transistor

    Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
    Text: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-23 Q62702-F1315 Sep-04-1996 BFR 182 transistor Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315

    transistor marking R2s

    Abstract: Q62702-F1489
    Text: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF OT-323 Q62702-F1489 900MHz Dec-11-1996 transistor marking R2s Q62702-F1489

    NR SOT-143

    Abstract: ta 8742 IC Q62702-F1282
    Text: BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-143 Q62702-F1282 Dec-13-1996 NR SOT-143 ta 8742 IC Q62702-F1282

    marking 93A

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144
    Text: BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF OT-143 Q62702-F1144 900MHz Dec-16-1996 marking 93A RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144

    Transistor BFR 90

    Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
    Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-323 Q62702-F1510 Dec-11-1996 Transistor BFR 90 F1510 Q62702-F1510 Transistor BFR 900mhz 193W

    Q62702-F1577

    Abstract: 193W
    Text: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-343 Q62702-F1577 Dec-12-1996 Q62702-F1577 193W

    Q62702-F1314

    Abstract: No abstract text available
    Text: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-23 Q62702-F1314 Dec-11-1996 Q62702-F1314

    Transistor BFR 38

    Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
    Text: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-23 Q62702-F1218 Dec-11-1996 Transistor BFR 38 Q62702-F1218 marking code ne sot 23 K 193 transistor

    BFP 181R

    Abstract: IC 7449 Q62702-F1685 SIEMENS marking
    Text: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-143R Q62702-F1685 Jan-21-1997 BFP 181R IC 7449 Q62702-F1685 SIEMENS marking

    BFG194

    Abstract: Q62702-F1321 BFG 38
    Text: BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF OT-223 BFG194 Q62702-F1321 Aug-22-1996 Q62702-F1321 BFG 38

    marking 93A

    Abstract: Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz
    Text: BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF OT-23 Q62702-F1086 900MHz Dec-12-1996 marking 93A Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz

    IC 2272

    Abstract: Q62702-F1502
    Text: BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-343 Q62702-F1502 Dec-12-1996 IC 2272 Q62702-F1502

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan
    PDF Q62702-F780 fl235fc BFQ69 DDb71D3

    BFq69

    Abstract: BFQ 58 ts102
    Text: SIEMENS NPN Silicon RF Transistor BFQ 69 • For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan
    PDF Q62702-F780 BFQ69 EHT07562 EHT07561 EHTQ7564 BFq69 BFQ 58 ts102

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan
    PDF 900MHz Q62702-F1492 OT-323 IS211