rce marking
Abstract: 2dd2098r 4A SOT89 MARKING CODE
Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A
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2DD2098R
2DB1386)
OT89-3L
OT89-3L
J-STD-020D
DS31299
621-2DD2098R-13
2DD2098R-13
rce marking
2dd2098r
4A SOT89 MARKING CODE
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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TRANSISTOR K 1507
Abstract: 1348 transistor Transistor 1507 Transistor 1308 marking code 0632 tp 220 n
Text: TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1.3V @ IC / IB = 2.5A / 0.6A Block Diagram ● High Voltage ● High Speed Switching Structure ●
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TSC236
O-220
ITO-220
TSC236CZ
TSC236CI
50pcs
TRANSISTOR K 1507
1348 transistor
Transistor 1507
Transistor 1308
marking code 0632
tp 220 n
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TL 434
Abstract: y1 marking code transistor HSB1386J
Text: HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.
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HJ200301
HSB1386J
O-252
183oC
217oC
260oC
TL 434
y1 marking code transistor
HSB1386J
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXT13N50DE6 ADVANCE INFORMATION 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • BVCEO > 50V Case: SOT26 IC = 4A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound
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ZXT13N50DE6
J-STD-020
100mV
DS33636
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IC 7495 pin configuration
Abstract: ic 7495 ZXTN25040DFH 50mmx50mm ZXTP25040DFH
Text: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A
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ZXTN25040DFH
ZXTP25040DFH
AEC-Q101
DS33697
IC 7495 pin configuration
ic 7495
ZXTN25040DFH
50mmx50mm
ZXTP25040DFH
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IRMCS1171
Abstract: MARKING CODE WMV
Text: IRSM836-045MA 4A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-045MA is a 4A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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IRSM836-045MA
IRSM836-045MA
12x12mm
protecIRSM836-045MA
SCOP200
IRMCS1171
MARKING CODE WMV
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IRSM836-045MA
Abstract: IRMCS1471
Text: IRSM836-045MA 4A, 500V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-045MA is a 4A, 500V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
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IRSM836-045MA
IRSM836-045MA
12x12mm
IRMCS1471
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ZXTP2014G
Abstract: ZXTP2014
Text: A Product Line of Diodes Incorporated ZXTP2014G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current
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ZXTP2014G
OT223
-140V
-120mV
AEC-Q101
OT223
J-STD-020
ZXTP2014G
DS33716
ZXTP2014
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CYStech Electronics
Abstract: sot-23 15V vebo pnp BTB1386LN3 BTD2098LN3
Text: CYStech Electronics Corp. Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1386LN3 Features • Low VCE sat , VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics
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C851N3
BTB1386LN3
BTD2098LN3
OT-23
UL94V-0
CYStech Electronics
sot-23 15V vebo pnp
BTB1386LN3
BTD2098LN3
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D2097
Abstract: power transistor Ic 4A NPN to - 251 BTD2097AI3
Text: CYStech Electronics Corp. Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2097AI3 Features • Low VCE sat , VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics
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C847I3-D9065T
BTD2097AI3
BTB1412AI3
O-251
UL94V-0
D2097
power transistor Ic 4A NPN to - 251
BTD2097AI3
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transistor B1326
Abstract: B1326 b1326 TRANSISTOR B-1326 C816I3 BTB1326I3
Text: Spec. No. : C816I3 Issued Date : 2003.07.03 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1326I3 Features • Low VCE sat , VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics
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C816I3
BTB1326I3
BTD2097I3
O-251
UL94V-0
transistor B1326
B1326
b1326 TRANSISTOR
B-1326
C816I3
BTB1326I3
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D2118
Abstract: transistor d2118 BTB1412J3 d2118 transistor Pw380us BTD2118J3 D21-1-8
Text: Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118J3 Features • Low VCE sat , VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics
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C847J3
BTD2118J3
BTB1412J3
O-252
UL94V-0
D2118
transistor d2118
BTB1412J3
d2118 transistor
Pw380us
BTD2118J3
D21-1-8
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CBVK741B019
Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Text: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.
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FDS2570
CBVK741B019
F011
F63TNR
F852
FDS2570
FDS9953A
L86Z
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D9326
Abstract: BD9329
Text: 4.75V to 18V, 2A/3A/4A 1ch Buck Converter Integrated FET BD9325FJ-LB BD9326EFJ-LB BD9327EFJ-LB ●General Description This is the product guarantees long time support And long life cycle in Industrial market. The BD9325FJ-LB, BD9326EFJ-LB and BD9329EFJ -LB are step-down regulators that integrate a low
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BD9325FJ-LB
BD9326EFJ-LB
BD9327EFJ-LB
BD9325FJ-LB,
BD9329EFJ
BD9325FJ
BD9326EFJ-LB
BD9325FJ-LB
D9326
BD9329
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CBVK741B019
Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Text: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.
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FDS2570
CBVK741B019
F011
F63TNR
F852
FDS2570
FDS9953A
L86Z
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SOT89 transistor marking 4A
Abstract: FJC1386 FJC2098 SOT89 MARKING CODE B2 camera strobe flash
Text: FJC2098 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 2 0 9 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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FJC2098
FJC1386
OT-89
FJC2098
SOT89 transistor marking 4A
FJC1386
SOT89 MARKING CODE B2
camera strobe flash
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA8003 (Tentative) Silicon PNP epitaxial planar type For low frequency output amplification • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Package Collector-base voltage (Emitter open)
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2002/95/EC)
DSA8003
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Untitled
Abstract: No abstract text available
Text: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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FJC1386
FJC2098
OT-89
FJC1386
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA7003 Silicon PNP epitaxial planar type For low frequency output amplification Complementary to DSC7003 DSA8003 in MiniP3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DSA7003
DSC7003
DSA8003
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA7003 Silicon PNP epitaxial planar type For low frequency output amplification Complementary to DSC7003 DSA8003 in MiniP3 type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DSA7003
DSC7003
DSA8003
DSA7003
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Untitled
Abstract: No abstract text available
Text: DSA7003 Silicon PNP epitaxial planar type For low frequency amplification Complementary to DSC7003 Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
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DSA7003
DSC7003
UL-94
DSA7003Ã
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Untitled
Abstract: No abstract text available
Text: MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application No Suffix • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C
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MJD32/32C
TIP32
TIP32C
MJD32
MJD32C
O-252
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Untitled
Abstract: No abstract text available
Text: PDU420 4A ULTRA-FAST RECOVERY RECTIFIER PowerDI 0/o5 Features Mechanical Data I Glass Passivated Die Construction I Case: PowerDI 5 1 Ultra-Fast Recovery Time for High Efficiency 1 High M aximum Junction Tem perature I I I I I I Case M aterial: M olded Plastic, GreenîM olding
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OCR Scan
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PDU420
J-STD-020C
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