DTC143TE
Abstract: DTC144TSA
Text: TM Micro Commercial Components DIGITAL TRANSISTORS MCC Part Number Power Dissipation Output Current Supply Voltage Pd mW Io(mA) VCC(V) DC Output Current Voltage Gain Input Input Transistion Frequency Package Polarity Marking Code Internal Diagram Gi Vo(V)
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DTA114EM
DTA144EM
DTA114ESA
DTC114ESA
DTC124ESA
DTC143ESA
DTC144TSA
DTC143TE
DTC144TSA
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HP 4194A
Abstract: B82422-H1682-K100 marking h100 B82422-H1223-K100 H1102 B82422-H1102-K100 B82422-H1152-K100 B82422-H1222-K100 B82422-H1332-K100 SSB1227-Z
Text: SMT Inductors, SIMID Series B82422-H*-+100 SIMID 1210-H100 High-current version Size 1210 EIA or 3225 (IEC) Rated inductance 1 to 100 µH Rated current 90 to 650 mA Construction • Ferrite core ■ Laser-welded winding ■ Flame-retardant encapsulation
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B82422-H*
1210-H100
SSB1383-G
SSB0893-E
HP 4194A
B82422-H1682-K100
marking h100
B82422-H1223-K100
H1102
B82422-H1102-K100
B82422-H1152-K100
B82422-H1222-K100
B82422-H1332-K100
SSB1227-Z
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pcb diagram welding inverter
Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive
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MIXA20W1200MC
20091002a
pcb diagram welding inverter
CIRCUIT diagram welding inverter
MIXA20W1200MC
marking W18
g14 DIODE marking
C5 marking diode
airconditioning inverter circuit
WELDING INVERTER DIAGRAM
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state
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MIXA20W1200MC
20110304b
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UC320
Abstract: CIRCUIT diagram welding inverter diode K14
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state
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MIXA20W1200MC
20110304b
UC320
CIRCUIT diagram welding inverter
diode K14
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H10N
Abstract: mosfet 650v H10N65
Text: HI-SINCERITY Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 1/6 MICROELECTRONICS CORP. H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 650V,10A
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MOS200906
H10N65
O-220AB
O-220FP)
183oC
217oC
260oC
H10N
mosfet 650v
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mosfet 600v 10a to-220ab
Abstract: h10n60 n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A
Text: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 1/5 MICROELECTRONICS CORP. H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 600V,10A
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MOS200902
H10N60
O-220AB
O-220FP)
183oC
217oC
260oC
mosfet 600v 10a to-220ab
n-CHANNEL POWER MOSFET 600v
mosfet vgs 5v
RD32
"MOSFET "600V 10A
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resistencia
Abstract: H1000C1 antenna tower microwave transmitter H1000 marKing del
Text: Product Datasheet H1000C1 50 Ohm Transmission Rev. 2/ 2005-11-30 2/2 Application Transmission cable is used for low and high power radio frequency RF connections. Examples include radio antenna tower connections, CB and cellular phone antenna connections and
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H1000C1
H1000C1
C100m,
1000m
resistencia
antenna tower
microwave transmitter
H1000
marKing del
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B88069X3820S102
Abstract: A71-H10X
Text: Surge Arrester 2-Electrode-Arrester A71-H10X Ordering code: B88069X3820S102 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10
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A71-H10X
B88069X3820S102
57845/VDE0845
B88069X3820S102
A71-H10X
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B88069X3820S102
Abstract: A71-H10X a71h10x B88069-X3820-S102
Text: Surge Arrester 2-Electrode-Arrester A71-H10X Ordering code: B88069X3820S102 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10
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A71-H10X
B88069X3820S102
57845/VDE0845
B88069X3820S102
A71-H10X
a71h10x
B88069-X3820-S102
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A71-H10XG
Abstract: B88069X3880T502
Text: Surge Arrester 2-Electrode-Arrester A71-H10XG Ordering code: B88069X3880T502 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10
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A71-H10XG
B88069X3880T502
57845/VDE0845
A71-H10XG
B88069X3880T502
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Untitled
Abstract: No abstract text available
Text: Surge Arrester 2-Electrode-Arrester A71-H10XG Ordering code: B88069X3880T502 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10
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A71-H10XG
B88069X3880T502
21ance
57845/VDE0845
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Untitled
Abstract: No abstract text available
Text: Surge Arrester 2-Electrode-Arrester A71-H10XG Ordering code: B88069X3880T502 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10
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A71-H10XG
B88069X3880T502
57845/VDE0845
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Untitled
Abstract: No abstract text available
Text: SMT inductors SIMID series, SIMID 1210-H100 Series/Type: B82422H1*100 Date: October 2012 a~í~=pÜÉÉí ¤ EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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1210-H100
B82422H1
AEC-Q200
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Untitled
Abstract: No abstract text available
Text: SMT-Induktivitäten SMT Inductors SIMID 1210-H100 SIMID 1210-H100 • Baugröße 1210 EIA bzw. 3225 (IEC) ■ Kernmaterial: Ferrit ■ Size 1210 (EIA) and/or 3225 (IEC) ■ Core material: ferrite Klimakategorie: 55/125/56 Anschlüsse: Bleifrei verzinnt Lötbarkeit:
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1210-H100
B82422-H1121-K108.
SSB1832-3
SSB1837-9
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H10N60F H10N60F N-Channel Power MOSFET 600V,10A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching
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MOS200902
H10N60F
O-220FP)
H10N60F
183oC
217oC
260oC
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T85 "Rocker Switches" PCB mount
Abstract: 4327030 lamp h4 female ck 66 ul94v-0 "Rocker Switch" DPST illuminated neon 3P ILLUMINATED ROCKER SWITCH marking code h65 marking .H22 T101J1AVBE2 76660
Text: Rockers Product Selection Guide Rocker 7000 E ET T 9000 DA D Miniature Miniature Subminiature Subminiature Power Rocker & Lever Handle Miniature Power Miniature Power Poles/Throws SPDT, DPDT, 3PDT, 4PDT SPDT, DPDT, 3PDT SPST, SPDT, DPDT SPST, SPDT, DPDT DPDT
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H-112
T85 "Rocker Switches" PCB mount
4327030
lamp h4 female
ck 66 ul94v-0
"Rocker Switch" DPST illuminated neon
3P ILLUMINATED ROCKER SWITCH
marking code h65
marking .H22
T101J1AVBE2
76660
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H1084 adj
Abstract: 1R2 DIODE H1084U h108433
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.06.01 Revised Date : 1999.08.01 Page No. : 1/5 H1084U Series 5A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 5A • Adjustable or Fixed Voltage.
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H1084U
H1084 adj
1R2 DIODE
h108433
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H1084 adj
Abstract: H1084E h1084
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/5 H1084E Series 5A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 5A • Adjustable or Fixed Voltage.
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H1084E
H1084 adj
h1084
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1R2 DIODE
Abstract: H1085 H1085J H1085U capacitor f 3.3j
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.06.01 Revised Date : 1999.08.01 Page No. : 1/5 H1085J Series 3A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 3A • Adjustable or Fixed Voltage
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H1085J
1R2 DIODE
H1085
H1085U
capacitor f 3.3j
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H1085U
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.06.01 Revised Date : 1999.08.01 Page No. : 1/5 H1085U Series 3A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 3A. • Adjustable or Fixed Voltage.
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H1085U
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Nichicon VX cap
Abstract: nichicon kl nichicon VX
Text: n ic k ic o n ALUMINUM ELECTROLYTIC CAPACITORS KL Low L eakage Current series Low Leakage Current Anti-Solvent Feature • Standard low leakage current series. n a n VXI ¡Specifications Item Performance Characteristics Operating Temperature Range —40— b85°C —40— h105'C product also available upon request, but product rated at less than 50V and can size smaller than ¿10X12.5Lmm
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10X12
120Hz
10X16
002CV
FoX11
10X20
Nichicon VX cap
nichicon kl
nichicon VX
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Untitled
Abstract: No abstract text available
Text: UMH10N IMH10A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH10N and IMH10A; H10 • • • UMH10N (UMT6) 2.0±0.2 3 U 2 M 1) package contains two independent
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UMH10N
IMH10A
SC-74)
IMH10A;
DTC123JKA)
SC-70)
SC-59)
UMH10N
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS ET Non-Polarized, Wide Temperature Range ÌP IW series N on -po larized series for operations over wide tem p era tu re range of — 5 5 — h105°C . v p <D ISpecifications Item Performance Characteristics Operating Temperature Range
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120Hz,
10X16
16X25
16X31
10X12
10X20
10X16
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