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    MARKING CODE GC DIODE Search Results

    MARKING CODE GC DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE GC DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A778

    Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
    Text: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration


    Original     		PDF Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 OT-89 A778 A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784

    GHM1540

    Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
    Text: This is the PDF file of catalog No.C16E-3. No.C16E3.pdf MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR DC250V-3.15kV/AC250V r.m.s. GHM Series MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C16E-3 This is the PDF file of catalog No.C16E-3.


    Original     		PDF C16E-3. C16E3 DC250V-3 15kV/AC250V C16E-3 GHM1000 GHM1500 AC250V GHM2000 GHM1540 GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384

    diode MARKING CODE GC

    Abstract: 2SC2012 fast recovery diode 600v 5A GC marking code diode marking code GC diode SC201 SC201-2 SC201-4 SC201-6 diode marking Gc
    Text: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications


    Original     		PDF SC201 SC201-2 SC201-4 SC201-6 SC201 diode MARKING CODE GC 2SC2012 fast recovery diode 600v 5A GC marking code diode marking code GC diode SC201-2 SC201-4 SC201-6 diode marking Gc

    dALLAS MARKING CODE

    Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
    Text: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications


    Original     		PDF SC201 SC201-2 SC201-4 SC201-6 SC201 dALLAS MARKING CODE fast recovery diode 600v 5A SC201-2 SC201-4 SC201-6 diode MARKING CODE GC

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
    Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits

    Untitled

    Abstract: No abstract text available
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


    Original     		PDF 6781A IRG4PH40UD2-E 200kHz O-247AD

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


    Original     		PDF 6781A IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking

    2SC2012

    Abstract: No abstract text available
    Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


    Original     		PDF SC201 SC201-2 SC201-4 SC201-6 SC201-8 SC201 15x15mm 2SC2012

    irf 3250

    Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
    Text: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH40UD2 O-247AC irf 3250 ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410

    transistor VCE 1000V

    Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC30UDPbF O-247AC IRFPE30 transistor VCE 1000V TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC30UDPbF O-247AC IRFPE30

    035H

    Abstract: IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC30UDPbF O-247AC IRFPE30 035H IRFPE30

    IRF 504

    Abstract: 005 418 irf 144
    Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC20UD-SPbF 200kHz IRF 504 005 418 irf 144

    marking code GC diode

    Abstract: SC201 SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA
    Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


    Original     		PDF SC201 SC201-2 SC201-4 SC201-6 SC201 15x15mm marking code GC diode SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA

    IRF1010

    Abstract: No abstract text available
    Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IRF1010

    IGBT 600V 12A

    Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
    Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IGBT 600V 12A TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010

    Untitled

    Abstract: No abstract text available
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD

    4060BE

    Abstract: No abstract text available
    Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications


    Original     		PDF SC201 200de SC201 15x15mm 4060BE

    IRG7PH42UD1-EP

    Abstract: IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT
    Text: PD - 97480 IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA


    Original     		PDF IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD IRG7PH42UD1-EP IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT

    IRG7PH42UD1PBF

    Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A

    irf 100v 200A

    Abstract: transistor irf 840 IRF 840 equivalent
    Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20UDPbF O-220AB O-220AB. irf 100v 200A transistor irf 840 IRF 840 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration


    OCR Scan     		PDF Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 OT-89 EHA07W rps300 flS35fciGS 235bD5 D1HD43H

    MARKING GA

    Abstract: Q62702-A779 Q62702-A778
    Text: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration


    OCR Scan     		PDF Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 OT-89 WA07007 MARKING GA

    MARKING GA

    Abstract: A779 baw78c
    Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8


    OCR Scan     		PDF 62702-A675 62702-A677 62702-A779 62702-A109 MARKING GA A779 baw78c