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    MARKING CODE FS 1 SOT 323 Search Results

    MARKING CODE FS 1 SOT 323 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE FS 1 SOT 323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2310

    Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
    Text: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,


    Original     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z Pb-Free Package is Available. L2SA1576AXT1G ORDERING INFORMATION Device 3 Shipping Package L2SA1576AXLT1G SC-70 3000/Tape & Reel L2SA1576AXLT3G SC-70 10000/Tape & Reel 1 2 SC-70/SOT– 323


    Original     		PDF L2SA1576AXT1G L2SA1576AXLT1G SC-70 L2SA1576AXLT3G 3000/Tape 10000/Tape SC-70/SOTâ

    BSS84W

    Abstract: No abstract text available
    Text: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance


    Original     		PDF BSS84W OT-323 SC-70) BSS84W T/R13

    Marking Code S72

    Abstract: No abstract text available
    Text: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3


    Original     		PDF 2N7002W OT-323 SC-70) OT-323 2N7002W T/R13 Marking Code S72

    SOT-323* "power supplies"

    Abstract: BSS84W
    Text: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance


    Original     		PDF BSS84W OT-323 SC-70) 2002/95/EC BSS84W T/R13 SOT-323* "power supplies"

    Untitled

    Abstract: No abstract text available
    Text: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance


    Original     		PDF BSS84W OT-323 SC-70) BSS84W T/R13

    Untitled

    Abstract: No abstract text available
    Text: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance


    Original     		PDF BSS84W OT-323 SC-70) 2002/95/EC Dra44 BSS84W T/R13

    Untitled

    Abstract: No abstract text available
    Text: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance


    Original     		PDF BSS84W OT-323 SC-70) 2002/95/EC BSS84W T/R13

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 L2SA1577QT1G S-L2SA1577QT1G L2SA1577QT3G S-L2SA1577QT3G SC-70 3000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 L2SA1577QT1G S-L2SA1577QT1G L2SA1577QT3G S-L2SA1577QT3G SC-70 3000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774*T1 COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SC-89 !Absolute maximum ratings Ta=25°C Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage


    Original     		PDF L2SA1774 SC-89

    L2SA1576AQT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 L2SA1576AQT1G S-L2SA1576AQT1G L2SA1576AQLT1G S-L2SA1576AQLT1G L2SA1576AQLT3G S-L2SA1576AQLT3G SC-70 3000/Tape

    L2SA1576ART1G

    Abstract: L2SA1576AST1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 L2SA1576AQT1G S-L2SA1576AQT1G L2SA1576AQLT1G S-L2SA1576AQLT1G L2SA1576AQLT3G S-L2SA1576AQLT3G SC-70 3000/Tape L2SA1576ART1G L2SA1576AST1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1576AQT1G Series z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Shipping Package L2SA1576AQLT1G Series SC-70 3000/Tape & Reel


    Original     		PDF L2SA1576AQT1G L2SA1576AQLT1G SC-70 L2SA1576AQLT3G 3000/Tape 10000/Tape SC-70/SOTâ

    RFID 5.8Ghz

    Abstract: phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060
    Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications


    Original     		PDF HSMS-286x HSMS286x OT-23/SOT143 th-323 SC70-3 OT-363 SC70-6 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG RFID 5.8Ghz phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060

    IC RFID 2.45 GHz

    Abstract: HSMS-286B HSMS-286K 915 MHz RFID c65 schottky ZZ 6-lead 34 sot-363 rf power amplifier FR4 epoxy 286l AN1124
    Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications


    Original     		PDF HSMS-286x HSMS286x OT-23/SOT143 higheSOT-323 SC70-3 OT-363 SC70-6 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG IC RFID 2.45 GHz HSMS-286B HSMS-286K 915 MHz RFID c65 schottky ZZ 6-lead 34 sot-363 rf power amplifier FR4 epoxy 286l AN1124

    FR4 substrate fiberglass

    Abstract: AV02-1388EN schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
    Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications


    Original     		PDF HSMS-286x HSMS286x OT-23/SOT10 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG HSMS-286x. 2005-20089Avago 5989-4023EN AV02-1388EN FR4 substrate fiberglass schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112W NPN Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 112W W Fs Q62702-C 2284 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO


    OCR Scan     		PDF Q62702-C OT-323 105cy

    transistor c2311

    Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


    OCR Scan     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 62702-C2311 transistor c2311 transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660

    transistor bc 487

    Abstract: transistor bc 488 sot-323 transistor marking code 15
    Text: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,


    OCR Scan     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 transistor bc 487 transistor bc 488 sot-323 transistor marking code 15

    LT 450 mbr

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,


    OCR Scan     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702 LT 450 mbr