MARKING CODE FS 1 SOT 223 Search Results

MARKING CODE FS 1 SOT 223 Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

MARKING CODE FS 1 SOT 223 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 RDS on 90 m ID 2.8 A V SOT 223 • Green Product (RoHS Compliant) • AEC Qualified Type Package Ordering Code Marking BSP615S2L SOT 223 On Request	Original	BSP615S2L 2N615L	PDF
2N603L Abstract: Q67060-S7213 BSP603S2L Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified	Original	BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L	PDF
2N615L Abstract: Q67060-S7211 BSP615S2L Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified	Original	BSP615S2L Q67060-S7211 2N615L 2003-10-2y 2N615L Q67060-S7211 BSP615S2L	PDF
2N615L Abstract: 55B5 BSP615S2L 2N615 Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified	Original	BSP615S2L Q67060-S7211 2N615L 2N615L 55B5 BSP615S2L 2N615	PDF
2N603L Abstract: Q67060-S7213 BSP603S2L d52a Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified	Original	BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a	PDF
Untitled Abstract: No abstract text available Text: SPN04N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in SOT 223 · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity Type 4 3 G,1	Original	SPN04N60S5 SPN04N60S5 VPS05163 OT-223 04N60S5 Q67040-S4211	PDF
720 TRANSISTOR smd sot-223 Abstract: SPN04N60S5 Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances	Original	SPN04N60S5 OT-223 VPS05163 SPN04N60S5 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223	PDF
SPN04N60S5 Abstract: transistor smd marking ds sot-223 04n60s5 VPS05163 Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances	Original	SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 transistor smd marking ds sot-223 04n60s5 VPS05163	PDF
720 TRANSISTOR smd sot-223 Abstract: SPN04N60S5 Text: SPN04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A • Ultra low gate charge SOT-223 • Extreme dv/dt rated 4 • Ultra low effective capacitances	Original	SPN04N60S5 OT-223 VPS05163 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223 SPN04N60S5	PDF
04n60c2 Abstract: Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60 Text: SPN04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in SOT 223 VDS 600 V • Ultra low gate charge RDS(on) 0.95 Ω • Extreme dv/dt rated ID 0.8 A • Ultra low effective capacitances	Original	SPN04N60C2 OT-223 Q67040-S4308 VPS05163 04N60C2 04n60c2 Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60	PDF
SPN04N60S5 Abstract: SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223 Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances	Original	SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223	PDF
s4308 Abstract: d065a 04n60c2 SPN04N60C2 GPS05560 VPS05163 04N60C 380v Q67040-S4308 Text: Preliminary data SPN04N60C2 Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors Feature • Product Summary New revolutionary high voltage technology · Worldwide best RDS on in SOT 223 VDS 600 V · Ultra low gate charge R DS(on) 0.95 W · Extreme dv/dt rated	Original	SPN04N60C2 OT-223 Q67040-S4308 VPS05163 04N60C2 s4308 d065a 04n60c2 SPN04N60C2 GPS05560 VPS05163 04N60C 380v Q67040-S4308	PDF
TRANSISTOR AH-16 Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601	PDF
CBF493S Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ	PDF

BC237 Abstract: motorola JFET 2N3819 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 2 SOURCE 3 GATE 3 1 DRAIN MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage	Original	MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 236AB) MMBF4391LT1 MMBF4392LT1 MSC1621T1 MSC2404 MSD1819A BC237 motorola JFET 2N3819	PDF
WT transistor Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc	Original	MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA	PDF
2N5640 equivalent Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C	Original	2N5640 226AA) Gate218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N5640 equivalent BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431	PDF
motorola JFET 2N3819 Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc	Original	226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 motorola JFET 2N3819 BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819	PDF
BC237 Abstract: S11S C4 SOT-323 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc	Original	MMBF4416LT1 236AB) Cha218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 S11S C4 SOT-323	PDF
bf244 Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage	Original	226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bf244 MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819	PDF
On semiconductor date Code mpf4393 Abstract: replacement for 2n2905 motorola JFET 2N3819 BF245 application note BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching MPF4392 MPF4393 1 DRAIN N–Channel — Depletion 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 30 Vdc Drain – Gate Voltage VDG 30 Vdc	Original	MPF4392 MPF4393 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 On semiconductor date Code mpf4393 replacement for 2n2905 motorola JFET 2N3819 BF245 application note BC237	PDF
Untitled Abstract: No abstract text available Text: SIEMENS CGY94 GaAs MMIC • • • • • • Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V 2 W output power at 3.6 V Overall power added efficiency 46 % Input matched to 50 ohms, simple output match	OCR Scan	CGY94 E35bD5 235bQ5 Q1HE355	PDF
MMIC marking code S2 Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09 Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match	OCR Scan	CGY94 Q68000-A9124 577ms 235bD5 MMIC marking code S2 SIEMENS MMIC powaramp ta CGY so SMD F09	PDF
Untitled Abstract: No abstract text available Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,	OCR Scan	Q68000-A8883 fl235b05	PDF

MARKING CODE FS 1 SOT 223 Search Results

MARKING CODE FS 1 SOT 223 Result Highlights (5)

MARKING CODE FS 1 SOT 223 Datasheets Context Search

Untitled

2N603L

2N615L

2N615L

2N603L

Untitled

720 TRANSISTOR smd sot-223

SPN04N60S5

720 TRANSISTOR smd sot-223

04n60c2

SPN04N60S5

s4308

TRANSISTOR AH-16

CBF493S

BC237

WT transistor

2N5640 equivalent

motorola JFET 2N3819

BC237

bf244

On semiconductor date Code mpf4393

Untitled

MMIC marking code S2

Untitled