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    MARKING CODE FS 1 SOT 223 Search Results

    MARKING CODE FS 1 SOT 223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE FS 1 SOT 223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 RDS on 90 m ID 2.8 A V SOT 223 • Green Product (RoHS Compliant) • AEC Qualified Type Package Ordering Code Marking BSP615S2L SOT 223 On Request


    Original     		PDF BSP615S2L 2N615L

    2N603L

    Abstract: Q67060-S7213 BSP603S2L
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L

    2N615L

    Abstract: Q67060-S7211 BSP615S2L
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2003-10-2y 2N615L Q67060-S7211 BSP615S2L

    2N615L

    Abstract: 55B5 BSP615S2L 2N615
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2N615L 55B5 BSP615S2L 2N615

    2N603L

    Abstract: Q67060-S7213 BSP603S2L d52a
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a

    Untitled

    Abstract: No abstract text available
    Text: SPN04N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in SOT 223 · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity Type 4 3 G,1


    Original     		PDF SPN04N60S5 SPN04N60S5 VPS05163 OT-223 04N60S5 Q67040-S4211

    720 TRANSISTOR smd sot-223

    Abstract: SPN04N60S5
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 VPS05163 SPN04N60S5 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223

    SPN04N60S5

    Abstract: transistor smd marking ds sot-223 04n60s5 VPS05163
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 transistor smd marking ds sot-223 04n60s5 VPS05163

    720 TRANSISTOR smd sot-223

    Abstract: SPN04N60S5
    Text: SPN04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A • Ultra low gate charge SOT-223 • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 VPS05163 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223 SPN04N60S5

    04n60c2

    Abstract: Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60
    Text: SPN04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in SOT 223 VDS 600 V • Ultra low gate charge RDS(on) 0.95 Ω • Extreme dv/dt rated ID 0.8 A • Ultra low effective capacitances


    Original     		PDF SPN04N60C2 OT-223 Q67040-S4308 VPS05163 04N60C2 04n60c2 Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60

    SPN04N60S5

    Abstract: SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223

    s4308

    Abstract: d065a 04n60c2 SPN04N60C2 GPS05560 VPS05163 04N60C 380v Q67040-S4308
    Text: Preliminary data SPN04N60C2 Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors Feature • Product Summary New revolutionary high voltage technology · Worldwide best RDS on in SOT 223 VDS 600 V · Ultra low gate charge R DS(on) 0.95 W · Extreme dv/dt rated


    Original     		PDF SPN04N60C2 OT-223 Q67040-S4308 VPS05163 04N60C2 s4308 d065a 04n60c2 SPN04N60C2 GPS05560 VPS05163 04N60C 380v Q67040-S4308

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    BC237

    Abstract: motorola JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 2 SOURCE 3 GATE 3 1 DRAIN MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage


    Original     		PDF MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 236AB) MMBF4391LT1 MMBF4392LT1 MSC1621T1 MSC2404 MSD1819A BC237 motorola JFET 2N3819

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


    Original     		PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    2N5640 equivalent

    Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C


    Original     		PDF 2N5640 226AA) Gate218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N5640 equivalent BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431

    motorola JFET 2N3819

    Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc


    Original     		PDF 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 motorola JFET 2N3819 BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819

    BC237

    Abstract: S11S C4 SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc


    Original     		PDF MMBF4416LT1 236AB) Cha218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 S11S C4 SOT-323

    bf244

    Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage


    Original     		PDF 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bf244 MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819

    On semiconductor date Code mpf4393

    Abstract: replacement for 2n2905 motorola JFET 2N3819 BF245 application note BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching MPF4392 MPF4393 1 DRAIN N–Channel — Depletion 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 30 Vdc Drain – Gate Voltage VDG 30 Vdc


    Original     		PDF MPF4392 MPF4393 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 On semiconductor date Code mpf4393 replacement for 2n2905 motorola JFET 2N3819 BF245 application note BC237

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY94 GaAs MMIC • • • • • • Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V 2 W output power at 3.6 V Overall power added efficiency 46 % Input matched to 50 ohms, simple output match


    OCR Scan     		PDF CGY94 E35bD5 235bQ5 Q1HE355

    MMIC marking code S2

    Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09
    Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match


    OCR Scan     		PDF CGY94 Q68000-A9124 577ms 235bD5 MMIC marking code S2 SIEMENS MMIC powaramp ta CGY so SMD F09

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q68000-A8883 fl235b05