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    MARKING CODE DPAK 425 Search Results

    MARKING CODE DPAK 425 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy

    MARKING CODE DPAK 425 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    AUIRFR4104

    Abstract: AUFR4104 AUIRFR4104TR AUIRFR4104TRL AUIRFR4104TRR AUFU4104
    Text: PD - 97452A AUIRFR4104 AUIRFU4104 AUTOMOTIVE GRADE HEXFET Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


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    PDF 7452A AUIRFR4104 AUIRFU4104 AUIRFR4104 AUFR4104 AUIRFR4104TR AUIRFR4104TRL AUIRFR4104TRR AUFU4104

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    Abstract: No abstract text available
    Text: PD - 97452A AUIRFR4104 AUIRFU4104 AUTOMOTIVE GRADE HEXFET Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


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    PDF 7452A AUIRFR4104 AUIRFU4104

    LR8N3-G

    Abstract: LR8N
    Text: Supertex inc. LR8 High Input Voltage, Adjustable 3-Terminal Linear Regulator Features ►► ►► ►► ►► ►► ►► General Description 13.2 - 450V input voltage range Adjustable 1.20 - 440V output regulation 5% output voltage tolerance Output current limiting


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    PDF B080113 LR8N3-G LR8N

    d30 n02

    Abstract: n02 mosfet marking code dpak 425 NTD30N02
    Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 30 AMPERES 24 VOLTS RDS on = 11.2 mW (Typ.) Typical Applications


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    PDF NTD30N02 tpv10 d30 n02 n02 mosfet marking code dpak 425

    n02g

    Abstract: 85 n02g 80 n02g d30n02 NTD30N02 NTD30N02G NTD30N02T4 NTD30N02T4G ON n02g
    Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available http://onsemi.com


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    PDF NTD30N02 tpv10 NTD30N02/D n02g 85 n02g 80 n02g d30n02 NTD30N02 NTD30N02G NTD30N02T4 NTD30N02T4G ON n02g

    high voltage constant current source

    Abstract: 400V to 12V DC Regulator LR8N3-G LR8K4-G
    Text: LR8 High Input Voltage Adjustable 3-Terminal Linear Regulator Features General Description ► ► ► ► ► ► The Supertex LR8 is a high voltage, low output current, adjustable linear regulator. It has a wide operating input voltage range of 13.2V to 450V. The output voltage can be


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    PDF A121806 high voltage constant current source 400V to 12V DC Regulator LR8N3-G LR8K4-G

    NTD30N02G

    Abstract: No abstract text available
    Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available http://onsemi.com


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    PDF NTD30N02 tpv10 NTD30N02/D NTD30N02G

    Untitled

    Abstract: No abstract text available
    Text: AUIRFR48Z Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D-Pak AUIRFR48Z Description


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    PDF AUIRFR48Z EIA-481 EIA-541. EIA-481. AUIRFR48ZTR AUIRFR48ZTRL

    Untitled

    Abstract: No abstract text available
    Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    PDF STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604

    AULR3114Z

    Abstract: AUIRLR3114Z U3114 AEC-Q101 auirlu3114z auirlr311
    Text: PD - 96381 AUTOMOTIVE GRADE AUIRLR3114Z AUIRLU3114Z HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Logic Level Lead-Free, RoHS Compliant


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    PDF AUIRLR3114Z AUIRLU3114Z AULR3114Z AUIRLR3114Z U3114 AEC-Q101 auirlu3114z auirlr311

    Untitled

    Abstract: No abstract text available
    Text: PD - 96381 AUTOMOTIVE GRADE AUIRLR3114Z AUIRLU3114Z HEXFET Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Logic Level Lead-Free, RoHS Compliant


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    PDF AUIRLR3114Z AUIRLU3114Z

    AULR2905

    Abstract: AUIRLR2905 AN-994
    Text: PD - 97623 AUTOMOTIVE GRADE • • • • • • • • • • Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    PDF AUIRLR2905 AULR2905 AUIRLR2905 AN-994

    Untitled

    Abstract: No abstract text available
    Text: AUIRLR2905 AUIRLU2905 AUTOMOTIVE GRADE • • • • • • • • • • Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    PDF AUIRLR2905 AUIRLU2905

    AULR2905

    Abstract: AUIRLR2905
    Text: AUIRLR2905 AUIRLU2905 AUTOMOTIVE GRADE • • • • • • • • • • Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


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    PDF AUIRLR2905 AUIRLU2905 AULR2905

    Untitled

    Abstract: No abstract text available
    Text: STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features • Designed for automotive applications and AEQ-Q101 qualified TAB • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH 3 • ESD gate-emitter protection


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    PDF STGD19N40LZ AEQ-Q101 DocID024506

    Untitled

    Abstract: No abstract text available
    Text: STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features • Designed for automotive applications and AEC-Q101 qualified TAB • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH 3 • ESD gate-emitter protection


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    PDF STGD19N40LZ AEC-Q101 DocID024506

    d30 n02

    Abstract: NTD30N02 d30n02 NTD30N02T4
    Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 30 AMPERES 24 VOLTS RDS on = 11.2 mW (Typ.) Typical Applications


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    PDF NTD30N02 tpv10 NTD30N02/D d30 n02 NTD30N02 d30n02 NTD30N02T4

    440v to 12v smps power supply

    Abstract: adjustable regulator high voltage lr8n3 MARKING LR SOT-89 400V INDUSTRIAL voltage regulator LR8N3 voltage regulator 3-terminal TO-243 400V to 12V DC Regulator LINEAR REGULATOR sot-89 TO-243 LR8K4 high voltage constant current source
    Text: LR8 High Input Voltage, Adjustable 3-Terminal Linear Regulator Features General Description ► ► ► ► ► ► The Supertex LR8 is a high voltage, low output current, adjustable linear regulator. It has a wide operating input voltage range of 13.2 - 450V. The output voltage can be adjusted from


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    PDF A091208 440v to 12v smps power supply adjustable regulator high voltage lr8n3 MARKING LR SOT-89 400V INDUSTRIAL voltage regulator LR8N3 voltage regulator 3-terminal TO-243 400V to 12V DC Regulator LINEAR REGULATOR sot-89 TO-243 LR8K4 high voltage constant current source

    D30N02

    Abstract: NTD30N02 NTD30N02T4 SMD310
    Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 30 AMPERES 24 VOLTS RDS on = 11.2 mW (Typ.) Typical Applications


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    PDF NTD30N02 tpv10 r14525 NTD30N02/D D30N02 NTD30N02 NTD30N02T4 SMD310

    d30n02

    Abstract: NTD30N02 NTD30N02T4 SMD310
    Text: NTD30N02 Power MOSFET 30 Amps, 24 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 30 AMPERES 24 VOLTS RDS on = 11.2 mW (Typ.)


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    PDF NTD30N02 tpv10 r14525 NTD30N02/D d30n02 NTD30N02 NTD30N02T4 SMD310

    AN-994

    Abstract: No abstract text available
    Text: PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


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    PDF AUIRFR2307Z AN-994

    AULR3705Z

    Abstract: AUIRLR3705Z auirlr3705 AN-994
    Text: PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features ● ● ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


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    PDF AUIRLR3705Z AULR3705Z AUIRLR3705Z auirlr3705 AN-994