B90P06
Abstract: MTB9
Text: Spec. No. : C733J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB90P06J3 BVDSS -60V ID -10A RDSON MAX 90.8mΩ Features • Low Gate Charge • Simple Drive Requirement
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C733J3
MTB90P06J3
O-252
UL94V-0
B90P06
MTB9
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PDF
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BB0P10
Abstract: MTBB0P10J3
Text: Spec. No. : C732J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTBB0P10J3 BVDSS -100V ID -10A RDSON MAX 205mΩ Features • Low Gate Charge • Simple Drive Requirement
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Original
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C732J3
MTBB0P10J3
-100V
O-252
UL94V-0
BB0P10
MTBB0P10J3
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PDF
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C734
Abstract: IR 2638
Text: Spec. No. : C734J3 Issued Date : 2009.07.09 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB12P04J3 BVDSS -40V ID -25A RDSON MAX 12.6mΩ Features • Low Gate Charge • Simple Drive Requirement
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Original
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C734J3
MTB12P04J3
O-252
UL94V-0
C734
IR 2638
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PDF
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BA5N10
Abstract: MTBA5N10J3 TO-252 MOSFET p channel C731J3
Text: Spec. No. : C731J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10J3 BVDSS 100V ID 10A RDSON MAX 150mΩ Features • Low Gate Charge • Simple Drive Requirement
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Original
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C731J3
MTBA5N10J3
O-252
UL94V-0
BA5N10
MTBA5N10J3
TO-252 MOSFET p channel
C731J3
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PDF
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B12N03
Abstract: MTB12N03Q8
Text: CYStech Electronics Corp. Spec. No. : C730Q8 Issued Date : 2009.07.02 Revised Date : Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB12N03Q8 BVDSS ID RDSON max 30V 12A 11.5mΩ Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
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C730Q8
MTB12N03Q8
MTB12N03Q8
UL94V-0
B12N03
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PDF
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DIMD10A-7
Abstract: DIMD10A
Text: SPICE MODEL: DIMD10A DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • · · · Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00
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Original
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DIMD10A
SC-74R
500mA
100mA
DIMD10A-7
3000/Tape
com/datasheets/ap02007
DIMD10A-7
DIMD10A
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PDF
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go c73
Abstract: DIMD10A-7
Text: DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free By Design/RoHS Compliant Note 1
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Original
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DIMD10A
SC-74R
MIL-STD-202,
DIMD10A-7
3000/Tape
com/datasheets/ap02007
DS30391
go c73
DIMD10A-7
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PDF
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marking code c73
Abstract: go c73
Text: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic
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Original
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MIMD10A
500mA
100mA
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30381
marking code c73
go c73
|
PDF
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Untitled
Abstract: No abstract text available
Text: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW P ROD RODUCT UC T Features • • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free/RoHS Compliant Note 1 "Green" Device (Note 3 and 4)
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Original
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MIMD10A
500mA
100mA
OT-363
J-STD-020A
MIL-STD-202,
DS30381
|
PDF
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Untitled
Abstract: No abstract text available
Text: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Also Available in Lead Free Version A C2 · · · · · E1 B C Mechanical Data
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Original
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MIMD10A
500mA
100mA
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30381
|
PDF
|
go c73
Abstract: No abstract text available
Text: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic
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Original
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MIMD10A
500mA
100mA
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30381
go c73
|
PDF
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C2 marking code
Abstract: J-STD-020A MIMD10A MIMD10A-7
Text: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT SPICE MODELS: MIMD10A NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free Product A C2 · · · · E1 B C Mechanical Data
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Original
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MIMD10A
500mA
100mA
OT-363,
J-STD-020A
MIL-STD-202,
OT-363
DS30381
C2 marking code
J-STD-020A
MIMD10A
MIMD10A-7
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PDF
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go c73
Abstract: No abstract text available
Text: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT SPICE MODELS: MIMD10A NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Also Available in Lead Free Version A C2 · · · ·
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Original
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MIMD10A
500mA
100mA
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30381
go c73
|
PDF
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dimd10a
Abstract: DIMD10A-7 go c73 75C13
Text: SPICE MODEL: DIMD10A DIMD10A Pb DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Lead-free NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction A SC-74R Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free By Design/RoHS Compliant Note 1
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Original
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DIMD10A
SC-74R
MIL-STD-202,
DIMD10A-7
3000/Tape
com/datasheets/ap02007
dimd10a
DIMD10A-7
go c73
75C13
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PDF
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|
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MIMD10A
Abstract: MIMD10A-7 k m marking
Text: SPICE MODELS: MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · · Epitaxial Planar Die Construction A Built-In Biasing Resistors C2 One 500mA PNP and One 100mA NPN E1 Available in Lead Free/RoHS Compliant Version Note 2
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Original
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MIMD10A
OT-363
DS30381
MIMD10A
MIMD10A-7
k m marking
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PDF
|
Untitled
Abstract: No abstract text available
Text: MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN A C2 SOT-363 B1 E1 B C Mechanical Data · · · · · · · · Case: SOT-363, Molded Plastic
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Original
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MIMD10A
500mA
100mA
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30381
|
PDF
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CMLDM7003E
Abstract: CMLDM7003J CMLDM7003 CMLDM7003JE marking code c73 mosfet marking code 40 C73 MARKING CODE marking C73
Text: Central CMLDM7003E CMLDM7003JE Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel
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Original
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CMLDM7003E
CMLDM7003JE
CMLDM7003JE
CMLDM7003E
OT-563
CMLDM7003:
CMLDM7003J:
25-September
CMLDM7003J
CMLDM7003
marking code c73
mosfet marking code 40
C73 MARKING CODE
marking C73
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PDF
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J-STD-020A
Abstract: MIMD10A MIMD10A-7-F
Text: SPICE MODELS: MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features • · · · Epitaxial Planar Die Construction A Built-In Biasing Resistors C2 SOT-363 B1 E1 One 500mA PNP and One 100mA NPN B C Lead Free/RoHS Compliant Note 1
|
Original
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MIMD10A
OT-363
J-STD-020A
MIL-STD-202,
DS30381
J-STD-020A
MIMD10A
MIMD10A-7-F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN SC-74R A CXX YM Mechanical Data · · · · · Case: SC-74R, Molded Plastic
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Original
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DIMD10A
SC-74R
500mA
100mA
SC-74R,
MIL-STD-202,
DS30391
|
PDF
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marking C73
Abstract: No abstract text available
Text: DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN SC-74R A CXX YM Mechanical Data · · · · · Case: SC-74R, Molded Plastic
|
Original
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DIMD10A
SC-74R
500mA
100mA
SC-74R,
MIL-STD-202,
DS30391
marking C73
|
PDF
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CMLDM7003E
Abstract: CMLDM7003JE CMLDM7003J
Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel
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Original
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CMLDM7003E
CMLDM7003JE
OT-563
CMLDM7003JE
CMLDM7003E
CMLDM7003E:
CMLDM7003JE:
200mA
CMLDM7003J
|
PDF
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sot transistor pinout
Abstract: CMLDM7003E CMLDM7003JE C73 MARKING CODE 10 marking code dual transistor
Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current
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Original
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CMLDM7003E
CMLDM7003JE
OT-563
CMLDM7003JE
18-January
sot transistor pinout
CMLDM7003E
C73 MARKING CODE
10 marking code dual transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current
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Original
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CMLDM7003E
CMLDM7003JE
OT-563
CMLDM7003JE
18-January
|
PDF
|
CMLDM7003E
Abstract: No abstract text available
Text: CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current
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Original
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CMLDM7003E
CMLDM7003JE
OT-563
CMLDM7003JE
28-January
CMLDM7003E
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PDF
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