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    MARKING CODE C7 TRANSISTOR Search Results

    MARKING CODE C7 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE C7 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB


    Original     		PDF STAC9200 2002/95/EC STAC244B STAC9200 DocID025416

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR193L3

    marking FC

    Abstract: No abstract text available
    Text: BFR380L3 NPN Silicon RF Transistor Preliminary data  High current capability and low figure for 3 wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz 1 2  Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR380L3 marking FC

    marking FA

    Abstract: No abstract text available
    Text: BFR340L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  Transition frequency of 14 GHz  High insertion gain 1  Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 marking FA

    infineon marking L2

    Abstract: BFR193L3
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR193L3 infineon marking L2 BFR193L3

    BFR193L3

    Abstract: BFR380L3 marking FC
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description


    Original     		PDF BFR380L3 BFR193L3 BFR380L3 marking FC

    BFR193L3

    Abstract: BFR340L3 marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 BFR193L3 BFR340L3 marking FA

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA

    C5 MARKING TRANSISTOR

    Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)


    Original     		PDF BFR380L3 C5 MARKING TRANSISTOR infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2

    Untitled

    Abstract: No abstract text available
    Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original     		PDF SD4933 2002/95/EEC SD4933

    Untitled

    Abstract: No abstract text available
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931

    LSE B9 transformer

    Abstract: SD4933MR LSE B6 transformer SD4933
    Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz


    Original     		PDF SD4933MR 2002/95/EEC M177MR SD4933MR LSE B9 transformer LSE B6 transformer SD4933

    Bead 220 ohm 2.5A

    Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
    Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 Bead 220 ohm 2.5A VK200 marking code transistor ND sd2931-10w

    sd2931-10w

    Abstract: marking code oz 09-Sep-2004
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 sd2931-10w marking code oz 09-Sep-2004

    Arco 423

    Abstract: choke vk200 sd2931-10w
    Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower


    Original     		PDF SD2931-10 SD2931-10 SD2931 Arco 423 choke vk200 sd2931-10w

    marking D12

    Abstract: UMD12N DTA144E DTC144E EMD12 T148
    Text: EMD12 / UMD12N / FMC7A Transistors Power management dual digital transistors EMD12 / UMD12N / FMC7A zExternal dimensions (Units : mm) zFeatures 1) Both the DTA144E and DTC144E in a EMT or UMT or SMT package. 0.22 (5) (3) (2) R1 FMC7A (4) (3) (1) (1) R2 R1


    Original     		PDF EMD12 UMD12N DTA144E DTC144E UMD12N EMD12 10/-10mA, marking D12 T148

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    Untitled

    Abstract: No abstract text available
    Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz


    Original     		PDF SD4933MR 2002/95/EEC M177MR SD4933MR DocID023664

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    Philips Capacitor

    Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency


    Original     		PDF BFG10W/X OT343 Philips Capacitor transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent

    d12n

    Abstract: d12n marking md-12n marking code C7 transistor D12NF marking d12n AC143
    Text: UMC1N / FMC1A UMD12N / FMC7A Transistors I Digital Transistor Dual Digital Transistors for Power Management UMC1N / FMC1A •Features 1 ) •A b so lute maximum ratings (Ta— 2 5 t ! D T A 1 4 3 T a n d D T C 1 4 3 T tra n s is to rs a r e h o u s e d Param eter


    OCR Scan     		PDF UMD12N 120mW 20CImW -475-A C144E) d12n d12n marking md-12n marking code C7 transistor D12NF marking d12n AC143

    2F PNP SOT23

    Abstract: MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS SMD MARKING CODE 4E marking codes SOT iSS marking c7 sot-23 MARKING H7 SOT-23
    Text: IOW NOISE SMI TRANSISTORS DESCRIPTION •Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed lowcurrent specifications for noise, gain and saturation voltages.


    OCR Scan     		PDF PMBT5089 BC849B BC849C PMBT5088 BCF32 BCF33 BC850B BC850C BCF81 PMBT6429 2F PNP SOT23 MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS SMD MARKING CODE 4E marking codes SOT iSS marking c7 sot-23 MARKING H7 SOT-23