6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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Untitled
Abstract: No abstract text available
Text: BC857BS 45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Ultra-Small Surface Mount Package • • Ideally Suited for Automated Insertion • • For switching and AF Amplifier Application • Totally Lead-Free & Fully RoHS compliant Notes 1 & 2
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BC857BS
J-STD-020
AEC-Q101
MIL-STD202,
OT363
DS30373
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pnp k3w
Abstract: BC857BSQ-7-F
Text: BC857BS DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Ideally Suited for Automated Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package “Lead-Free”, RoHS Compliant Note 1
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BC857BS
AEC-Q101
OT363
J-STD-020
MIL-STD-202,
OT363
BC857BS-7-F
BC857BS-13-F
BC857BSQ-7-F
pnp k3w
BC857BSQ-7-F
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SOT363 6 BC847BS
Abstract: No abstract text available
Text: BC847BS DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Ultra-Small Surface Mount Package Ideally Suited for Automated Insertion For switching and AF Amplifier Application Totally Lead-Free & Fully RoHS compliant Notes 1 & 2
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BC847BS
AEC-Q101
OT363
J-STD-020
MIL-STD202,
OT363
DS30222
SOT363 6 BC847BS
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SMD INDUCTOR marking code C4
Abstract: national marking code national semiconductor part marking NATIONAL SEMICONDUCTOR MARKING TYPE national marking date code 1505 marking NR3015 C1005X5R1A104KT an-1505 national LM3207TL
Text: National Semiconductor Application Note 1505 Jeffrey Colwell July 2007 Introduction tegrated LDO with a nominal has a maximum Iref of 10 mA. See Ordering Information table on page 2 for Voltage Options. The LM3207 offers superior performance for powering WCMDA / CDMA RF power amplifiers and similar applications.
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LM3207
AN-1505
SMD INDUCTOR marking code C4
national marking code
national semiconductor part marking
NATIONAL SEMICONDUCTOR MARKING TYPE
national marking date code
1505 marking
NR3015
C1005X5R1A104KT
an-1505 national
LM3207TL
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S6419
Abstract: No abstract text available
Text: Low Power Audio Amplifier Semiconductor S6419/P Description http:// www.auk.co.kr The S6419/P is a low power audio amplifier integrated circuit, intended for the communication applications, such as in speakerphones. It provides differential speaker outputs to
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S6419/P
S6419/P
KSD-I7F022-001
S6419
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MLX90242LUA-GAA-000
Abstract: smd hall effect sensor 175 hall sensor MLX90242 smd code 24 hall effect smd marking CODE WB 12 SMD 6 PIN IC MARKING CODE SE marking code WW SMD
Text: MLX90242 Linear Hall Effect Sensor Features and Benefits Quad Switched Hall Plate / Chopper Stabilized Amplifier Ratiometric Output for A/D Interface Low Quiescent Voltage Thermal Drift Small Plastic Packages TSOT, TO-92 RoHS compliant TSOT package Applications
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MLX90242
MLX90242
GAA-000
MLX90242LUA-GAA-000
smd hall effect sensor
175 hall sensor
smd code 24 hall effect
smd marking CODE WB 12
SMD 6 PIN IC MARKING CODE SE
marking code WW SMD
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Untitled
Abstract: No abstract text available
Text: Low Power Audio Amplifier Semiconductor S6419/P Description http:// www.auk.co.kr The S6419/P is a low power audio amplifier integrated circuit, intended for the communication applications, such as in speakerphones. It provides differential speaker outputs to
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S6419/P
S6419/P
KSD-I7F022-001
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Untitled
Abstract: No abstract text available
Text: TS34119 Low Power Audio Amplifier SOP-8 DIP-8 Pin assignment: 1. CD 8. VO2 2. FC2 7. Gnd 3. FC1 6. Vcc 4. Vin 5. VO1 General Description The TS34119 is a low power audio amplifier, it integrated circuit intended primarily for telephone applications such
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TS34119
TS34119
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A07 RF Amplifier
Abstract: audio amplifier SOP RF AMPLIFIER marking A07 TS34119CS 27BSC TS34119 TS34119CD power audio amplifier design
Text: TS34119 Low Power Audio Amplifier SOP-8 DIP-8 Pin assignment: 1. CD 8. VO2 2. FC2 7. Gnd 3. FC1 6. Vcc 4. Vin 5. VO1 General Description The TS34119 is a low power audio amplifier, it integrated circuit intended primarily for telephone applications， such
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TS34119
TS34119
A07 RF Amplifier
audio amplifier SOP
RF AMPLIFIER marking A07
TS34119CS
27BSC
TS34119CD
power audio amplifier design
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Untitled
Abstract: No abstract text available
Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR193L3
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Untitled
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
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SMD MARKING CODE f2
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
SMD MARKING CODE f2
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marking FA
Abstract: No abstract text available
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
marking FA
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K1F transistor
Abstract: marking k1f
Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic
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BC847BS
OT-363,
J-STD-020A
MIL-STD-202,
OT-363
DS30222
K1F transistor
marking k1f
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K1F transistor
Abstract: BC847BS BC847BS-7 J-STD-020A
Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic
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BC847BS
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30222
K1F transistor
BC847BS
BC847BS-7
J-STD-020A
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SOT363 6 BC847BS
Abstract: K1F transistor
Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic
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BC847BS
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30222
SOT363 6 BC847BS
K1F transistor
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Circuit diagram of 12v 1W LED driver
Abstract: led 3w 12v 4148 diode 3W LED
Text: Advanced Power Electronics Corp. Preliminary APE1831/A 1A, 0.25V FEEDBACK VOLTAGE STEP-DOWN SWITCHING REGULATORS FOR LED DRIVER GENERAL DESCRIPTION APE1831/A consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal PMOS
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APE1831/A
APE1831/A
Circuit diagram of 12v 1W LED driver
led 3w 12v
4148 diode
3W LED
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K1F transistor
Abstract: No abstract text available
Text: BC847BS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 Mechanical Data · · · · · · · · A Case: SOT-363, Molded Plastic
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BC847BS
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30222
K1F transistor
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marking FB
Abstract: No abstract text available
Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR360T
marking FB
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Untitled
Abstract: No abstract text available
Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR181T
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marking FA
Abstract: BFR340T
Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
marking FA
BFR340T
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Untitled
Abstract: No abstract text available
Text: BGA825L6S Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.1, 2012-10-17 RF & Protection Devices Edition 2012-10-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG
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BGA825L6S
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BGA915
Abstract: No abstract text available
Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA915N7
BGA915
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