diode SMD MARKING CODE 2M
Abstract: DIODE smd marking A1 k1 marking 2k
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT754 series Schottky barrier double diodes Product specification Supersedes data of 1999 Aug 05 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series PINNING
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M3D088
BAT754
BAT54
13-Feb-03)
diode SMD MARKING CODE 2M
DIODE smd marking A1
k1 marking 2k
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scda5r5473v
Abstract: samsung electrolytic capacitor SCDA5R5473 starcap scda5r5104v SCDA5R5 starcap 1.0 F scda5r5104 5.5v 0.047f samsung semphil laguna
Text: STARCAP R STARCAP R PERFORMANCE CHARACTERISITICS The STARCAP is an electric double layer capacitor consisting of activated charcoal electrodes and organic electrolyte. Because of extremely larger effective surface area of the activated charcoal electodes.
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1535M.
India-110024
Mumbai-21,
scda5r5473v
samsung electrolytic capacitor
SCDA5R5473
starcap
scda5r5104v
SCDA5R5
starcap 1.0 F
scda5r5104
5.5v 0.047f
samsung semphil laguna
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Photoresistor rohs
Abstract: photoresistor LDR 03 Light-Dependent Resistor specification cadmium sulfide photoresistor photoresistor LDR 1000
Text: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong
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Light-Dependent Resistor specification
Abstract: photoresistor ldr 07 photoresistor LDR 03 photoresistor LDR 5mm 5mm ldr photo resistor LDR 07 CDS LDR 5mm photoresistors cadmium sulfide photoresistor LDR 03 PHOTO RESISTOR
Text: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong
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TPS82690
Abstract: No abstract text available
Text: TPS82690 TPS82695 SLVSA66 – JUNE 2011 www.ti.com 500-mA, HIGH-EFFICIENCY MicroSiP STEP-DOWN CONVERTER PROFILE <1mm Check for Samples: TPS82690, TPS82695 FEATURES 1 • • • 95% Efficiency at 4MHz Operation 24 A Quiescent Current 4MHz Regulated Frequency Operation
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TPS82690
TPS82695
SLVSA66
500-mA,
TPS82690,
TPS82690
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T 3036
Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,
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2N2377
MIL-S-19SCW288
MIL-s-19500/288
T 3036
bel transistor 1041 B
SAQ marking
2N23
2N2377
S19C
T3036
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TPS82690
Abstract: No abstract text available
Text: TPS82690 TPS82695 TPS82697 SLVSA66B – JUNE 2011 – REVISED FEBRUARY 2012 www.ti.com 500-mA, HIGH-EFFICIENCY MicroSiP STEP-DOWN CONVERTER PROFILE <1mm Check for Samples: TPS82690, TPS82695, TPS82697 FEATURES 1 • • • • • • • • • •
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TPS82690
TPS82695
TPS82697
SLVSA66B
500-mA,
TPS82690,
TPS82695,
TPS82690
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TPS82690
Abstract: No abstract text available
Text: TPS82690 TPS82695 TPS82697 SLVSA66B – JUNE 2011 – REVISED FEBRUARY 2012 www.ti.com 500-mA, HIGH-EFFICIENCY MicroSiP STEP-DOWN CONVERTER PROFILE <1mm Check for Samples: TPS82690, TPS82695, TPS82697 FEATURES 1 • • • • • • • • • •
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TPS82690
TPS82695
TPS82697
SLVSA66B
500-mA,
TPS82690,
TPS82695,
TPS82690
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TPS82690
Abstract: No abstract text available
Text: TPS82690 TPS82695 TPS82697 SLVSA66B – JUNE 2011 – REVISED FEBRUARY 2012 www.ti.com 500-mA, HIGH-EFFICIENCY MicroSiP STEP-DOWN CONVERTER PROFILE <1mm Check for Samples: TPS82690, TPS82695, TPS82697 FEATURES 1 • • • • • • • • • •
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TPS82690
TPS82695
TPS82697
SLVSA66B
500-mA,
TPS82690,
TPS82695,
TPS8269xSIP
500mA,
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Untitled
Abstract: No abstract text available
Text: TPS62620, TPS62621 TPS62622, TPS62623 TPS62624, TPS62625 CSP-6 SLVS848C – JULY 2009 – REVISED AUGUST 2011 www.ti.com 600-mA, 6-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING Check for Samples: TPS62620, TPS62621, TPS62622, TPS62623, TPS62624, TPS62625
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TPS62620,
TPS62621
TPS62622,
TPS62623
TPS62624,
TPS62625
SLVS848C
600-mA,
TPS62621,
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TPS62661
Abstract: No abstract text available
Text: CSP-6 TPS62660, TPS62665 SLVS871C – FEBRUARY 2010 – REVISED JULY 2011 www.ti.com 1000-mA, 6-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING Check for Samples: TPS62660, TPS62665 FEATURES 1 • • • • • 91% Efficiency at 6MHz Operation
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TPS62660,
TPS62665
SLVS871C
1000-mA,
TPS62661
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TPS62661
Abstract: No abstract text available
Text: CSP-6 TPS62660, TPS62665 SLVS871C – FEBRUARY 2010 – REVISED JULY 2011 www.ti.com 1000-mA, 6-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING Check for Samples: TPS62660, TPS62665 FEATURES 1 • • • • • 91% Efficiency at 6MHz Operation
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TPS62660,
TPS62665
SLVS871C
1000-mA,
TPS62661
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TPS62661
Abstract: No abstract text available
Text: CSP-6 TPS62660, TPS62665 SLVS871C – FEBRUARY 2010 – REVISED JULY 2011 www.ti.com 1000-mA, 6-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING Check for Samples: TPS62660, TPS62665 FEATURES 1 • • • • • 91% Efficiency at 6MHz Operation
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TPS62660,
TPS62665
SLVS871C
1000-mA,
TPS62661
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connectors
Abstract: smd marking code bk4 Diodo b4 diodo zener a3 1a60 4p diodo DIODO 55 SMD diodo 4514 smd
Text: version 110125 Index | Indice Description Descrizione Family Famiglia Page Pagina For electrovalves, EN175301-803 style A, ISO 4400, former DIN 43650-A , 18 mm spacing, 2p+2G, female, with cable Per elettrovalvole, EN175301-803 stile A, ISO 4400, (ex DIN 43650-B),
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EN175301-803
3650-A)
43650-B)
76A2T
connectors
smd marking code bk4
Diodo b4
diodo zener a3
1a60
4p diodo
DIODO 55 SMD
diodo 4514 smd
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245481
Abstract: relais STPI 245482 245.481 schema power double 300 cenelec relay relais 5 pins va 245 schema led table relay 220v 4 contact
Text: RELAIS INSTANTANÉ INSTANTANEOUS RELAY SÉRIE 245 4 RT - 4 PU T CARACTÉRISTIQUES GÉNÉRALES GENERAL CHARACTERISTICS Intensité nominale suivant le type 3 ou 5 A Endurance mécanique 30.106 manoeuvres Tension nominale d'isolement 250 V Rigidité diélectrique entre :
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245481
Abstract: A21A2 cenelec relay 245.481 schema power supply double ic relais STPI 31A2 ltnb 9743a 13L-0
Text: M O D U L E S T E M P O R IS E S ELECTRONIQUES A L 'E N C L E N C H E M E N T ET AU D E C L E N C H E M E N T ELECTRO NIC T IM E DELAY M O D U L E S O N OPERATE A N D O N RELEASE 0,2 seconde à 50 minutes C A R A C T E R IS T IQ U E S GENERALES GENERAL C H A R A C T E R IS T IC S
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relais STPI
Abstract: stpi 259 time delay relay 284110 teei cenelec relay golden relay gh
Text: RELAIS TEMPORISE ELECTRONIQUE A L'ENCLENCHEMENT ELECTRONIC TIM E DELAY RELAY ON OPERATE 0,25 seconde à 30 m inutes s é r i é 259 TEEI 2 RT Temporisés + 1 RT instantané 2 PD T delayed + 1 P D T instantaneous CARACTERISTIQUES GENERALES GENERAL CHARACTERISTICS
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re-69007
relais STPI
stpi 259 time delay relay
284110
teei
cenelec relay
golden relay gh
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relais STPI
Abstract: stpi 259 time delay relay relais temporise cenelec relay circuit electronique de commande 284110
Text: RELAIS TEMPORISE ELECTRONIQUE AU DECLENCHEMENT ELECTRONICTIME DELAY RELAY ON RELEASE 0,25 seconde à 30 minutes s é r i é 259 TERI 2 RT Temporisés + 1 RT instantané 2 PDT delayed + 1 PDT instantaneous CARACTERISTIQUES GENERALES GENERAL CHARACTERISTICS
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Untitled
Abstract: No abstract text available
Text: nioliicon ALUMINUM ELECTROLYTIC CAPACITORS Horizontal Mounting Type series 3 S-naffer ELECTR0LYT • For $£20, $ 22 and $625, but suited for horizontal mounting to assure flat and low-profile design. I DM •Specifications Item Performance Characteristics
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120Hz,
22X35
22X40
22X60
25X35
25X40
25X45
25X50
25X60
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION — »— LOG ALL RIGHTS RESERVED. DIST REVISIONS GW BY TYCO ELECTRONICS CORPORATION. LTR DESCRIPTION □ CONNECTOR ASSEMBLY EXEMPLARY CONNECTOR LOADED PO SSIBLE E H -0 1 5 3 -9 6 CONTACT LAYOUT
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29F017A
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-70'-90/-i2 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
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MBM29F017A-70
-90/-i2
48-pin
40-pin
D-63303
F9811
29F017A
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ASA-GF30
Abstract: No abstract text available
Text: RELEASED BY C O P Y R I G HT 2 0 0 7 TYCO ELECTRONICS CODING A1 FOR CORPORATION. 20 0 7 PUBLICATION ALL R 1G H T S LOC D I ST REV ISIONS Al RESERVED. p J T T DESCRIPTION DWN DATE SEE E - 0 7 - 0 2 5 3 8 4 c P R O J E C T NO. A93-52217 1 6 . 1 5 ^ LTR APVD
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A93-52217
240CT2007
240CT2007
250CT2007
ASA-GF30
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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