Potentiometers and Trimmers
Abstract: PE25 Sfernice pm82A P11T potentiometer sfernice T19P sfernice Vishay Sfernice pE25 P10XX 504 pm84b vishay P11 SAP PART NUMBERING GUIDELINES pe30pe 5k
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book potentiometers and trimmers vishay vse-db0018-0609 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0018-0609
Potentiometers and Trimmers
PE25 Sfernice
pm82A
P11T potentiometer sfernice
T19P sfernice
Vishay Sfernice pE25
P10XX 504
pm84b
vishay P11 SAP PART NUMBERING GUIDELINES
pe30pe 5k
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ALTERATION CAPACITANCE ITEM CODE F ECWFD2Wl 04 0 4 H 2W12404 1 1 2W15404 1 1 O . 1 O . 12 1ssuq DESCRIPTION ICompany n a m e changed 申 L (104) 12 .6 H， H T 2013 d O .6 4 .5 8 . 9 3O .9 ( 1 24) 1 4 .6 1 ( 1 54)
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2W15404
2W184
2W22404
2W27404
2W33404
2W39404
B023J-J-E
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5210 diode
Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
5210 diode
NPN Silicon Power Transistor DPAK
npn transistors 400V low power
TSC5304D
TSC5304DCH
TSC5304DCP
C5 MARKING TRANSISTOR
L 0814
CW68
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ALTERATION CAPACITANCE ITEM CODE F ECWFD2Wl 04 0 4 H 2W12404 1 1 2W15404 1 1 O . 1 O . 12 1ssuq DESCRIPTION ICompany n a m e changed 申 L (104) 12 .6 H， H T 2013 d O .6 4 .5 8 . 9 3O .9 ( 1 24) 1 4 .6 1 ( 1 54)
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2W15404
2W184
2W22404
2W27404
2W33404
2W39404
B023J-J-E
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zener Marking K7
Abstract: BZD17C BZD17C120P BZD17C36P Diodes Marking K6 Diodes Marking K7 BZD17C12P diode L2.70 C12P C27P
Text: BZD17C SERIES 0.8 Watts Voltage Regulator Diodes Pb RoHS Sub SMA COMPLIANCE Features Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability High temperature soldering:
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BZD17C
260oC
zener Marking K7
BZD17C120P
BZD17C36P
Diodes Marking K6
Diodes Marking K7
BZD17C12P
diode L2.70
C12P
C27P
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Untitled
Abstract: No abstract text available
Text: Aerogel Supercapacitors B Series Description RoHS 2002/95/EC The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double layer capacitors EDLCs with the added benefit
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2002/95/EC
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B1835-2R5336
Abstract: B1020-2R5335 b1030 B1030-2R5475
Text: Power erStor PRELIMINARY Aerogel Capacitors B Series Description The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double
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B1835-2R5336
Abstract: No abstract text available
Text: Power Stor PRELIMINARY Aerogel Capacitors B Series Description The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double
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transistor B1010
Abstract: B1010-2R5155 B1030 transistor B1635-2R5226 aerogel capacitor f series B1030-2R5685 B1635 B1635 transistor 2R56 B0810-2R5105
Text: Power erStor Aerogel Supercapacitors B Series Description The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double
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aerogel capacitor f series
Abstract: B1020-2R5335 B1030 transistor B1635-2R5226 B1635 B0510-2R5224 B0810-2R5105 B0820-2R5225 B0830-2R5475 B1010-2R5155
Text: Power Stor PRELIMINARY Aerogel Capacitors B Series Description The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double
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Untitled
Abstract: No abstract text available
Text: Power Stor Aerogel Supercapacitors B Series Description RoHS 2002/95/EC The PowerStor® Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and
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2002/95/EC
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Untitled
Abstract: No abstract text available
Text: Power erStor Aerogel Supercapacitors B Series Description The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double
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Untitled
Abstract: No abstract text available
Text: Aerogel Supercapacitors B Series Description RoHS 2002/95/EC The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and
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2002/95/EC
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aerogel capacitor f series
Abstract: B1030 transistor transistor B1010 b1020 B1635 B1635-2R5226 B0510-2R5224 B0810-2R5105 b0820 B0830-2R5475
Text: Power erStor Aerogel Supercapacitors B Series Description The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double
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B1840-2R5506-R
Abstract: B1010-2R5155-R B1635 transistor B0820-2R5225-R transistor B1010 2R51 2R510 B1030 transistor B1635-2R5226 B0510-2R5224-R
Text: Supercapacitors B Series Description Cooper Bussmann PowerStor supercapacitors are unique, ultra-high capacitance devices utilizing electrochemical double layer capacitor EDLC construction combined with new, high performance materials. This combination of advanced technologies allows Cooper Bussmann
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BU-SB08841
B1840-2R5506-R
B1010-2R5155-R
B1635 transistor
B0820-2R5225-R
transistor B1010
2R51
2R510
B1030 transistor
B1635-2R5226
B0510-2R5224-R
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Untitled
Abstract: No abstract text available
Text: Supercapacitors B Series Description Cooper Bussmann PowerStor® supercapacitors are unique, ultra-high capacitance devices utilizing electrochemical double layer capacitor EDLC construction combined with new, high performance materials. This combination of advanced technologies allows Cooper Bussmann
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BU-SB07353
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Precision Potentiometers, Position Sensors
Abstract: 91/157/AET
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book precision potentiometers, Position sensors vishay vse-db0100-1310 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0100-1310
Precision Potentiometers, Position Sensors
91/157/AET
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Q62702-B0832
Abstract: Diode 442 marking VB DIODE
Text: SIEMENS BBY 51-07 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY 51-07 HHs Q62702-B0832 1 =C1 Od Pin Configuration II Ordering Code O Marking
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Q62702-B0832
OT-143
Q62702-B0832
Diode 442
marking VB DIODE
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d2 SMD TRANSISTORs pnp npn
Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Text: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100
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OT-23
350mW
bc858b
bc558b
bc858c
bc558c
bc859
bc559
bc859a
bc559a
d2 SMD TRANSISTORs pnp npn
BCW600
2n2222a smd
smd transistors
B5R17
hS7 marking
darlington bc smd
smd marking BJ
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Pin Configuration BBY 52-02W K 1 =C Q62702-B0860
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2-02W
Q62702-B0860
SCD-80
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CF300
Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
Text: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
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50B4DIN41867
569-GS
CF300
CF-300
telefunken mosfet
marking code g1s
transistor bf 222
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transistor t2a 82
Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:
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T-33-/3
T0126
15A3DIN
transistor t2a 82
transistor 81 110 w 85
transistor BUT 12
transistor BC 245
BUT76A
transistor BF 245
MARKING NJ CODE SOT 23
TRANSISTOR BI 237
marking 712
marking va transistors
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B0947
Abstract: b027 b0914 1225M B0902 LFA30-15B LFJ30-03 marking code ax LFJ30
Text: LC FILTER-BANDPASS CHIP MONOLITHIC LFA, LFL 8c LFJ Series FEATURES • ■ ■ ■ ■ ■ ■ Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging Reflow solderable Frequency request flexibility Frequency range from 600MHz to 2.5GHz
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600MHz
LFA30
LFL30
B0947
b027
b0914
1225M
B0902
LFA30-15B
LFJ30-03
marking code ax
LFJ30
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E 13003 TRANSISTOR
Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique
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T-33-II
0IN41
I3-75.
15A3DIN
E 13003 TRANSISTOR
c s 13003 TRANSISTOR
W 13003 TRANSISTOR
13002 TRANSISTOR
transistor 13002
LM 13003
T 08 13003 transistor
transistor LB 13003 C
electronic ballast by transistor 13003
13003 TRANSISTOR
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