Untitled
Abstract: No abstract text available
Text: SUT390J Epitaxial planar NPN silicon transistor Description • Com plex t ype bipolar t ransist or Feature • Sm all package save PCB area • Reduce quant it y of part s and m ount ing cost • Two SBT3904 chips in SOT- 363 package Package : SOT-363 Ordering Information
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SUT390J
SBT3904
OT-363
KSD-T5S009-002
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Untitled
Abstract: No abstract text available
Text: GM2950/GM2951 100mA, LOW DROPOUT VOLTAGE REGULATORS Description Features The GM2950 and GM2951 is a low power voltage regulator. This device is an excellent choice for use in battery powered application such as cordless telephone, radio control systems, and portable
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GM2950/GM2951
100mA,
GM2950
GM2951
100mA
GM2950/GM2951
J-STD-020.
900ppm
1500ppm
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MA SOT23-5 ROHS
Abstract: marking code AS sot-25 yp GM6155-AST25RG yp sot-25
Text: GM6155 GM6155 150mA LOW NOISE LDO WITH ENABLE FUNCTION Description Features Ultra low noise output GM6155 is a high efficient LDO with features as such ultra low noise output, ultra low dropout voltage typically 17mV at light load and 165mV at 50mA load , and low ground current (600µA at
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GM6155
GM6155
150mA
165mV
100mA
GM6155V2
MA SOT23-5 ROHS
marking code AS sot-25 yp
GM6155-AST25RG
yp sot-25
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FL014
Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
OT-223
IRFL014
FL014
FL014
FL014 Example
AN-994
IRFL9014
IRFL4310
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Untitled
Abstract: No abstract text available
Text: IRFL9014 MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A S Description S O T -2 2 3 The SOT-223 package is designed for surface-mount using
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IRFL9014
OT-223
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AN-994
Abstract: IRLL014
Text: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description
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0866A
IRLL014
OT-223
ther10)
AN-994
IRLL014
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AN-994
Abstract: IRFL214 90862A
Text: PD - 90862A IRFL214 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description
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0862A
IRFL214
OT-223
therma10)
AN-994
IRFL214
90862A
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AN-994
Abstract: IRFL9110
Text: PD - 90864A IRFL9110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A Description S Third Generation HEXFETs from International Rectifier
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0864A
IRFL9110
-100V
OT-223
performanc10)
AN-994
IRFL9110
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IRFL9014
Abstract: sot-223 MOSFET AN-994
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
performanc10)
IRFL9014
sot-223 MOSFET
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 90862A IRFL214 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description
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0862A
IRFL214
OT-223
08-Mar-07
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irfl9014
Abstract: No abstract text available
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
08-Mar-07
irfl9014
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Untitled
Abstract: No abstract text available
Text: PD - 90864A IRFL9110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A Description S Third Generation HEXFETs from International Rectifier
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0864A
IRFL9110
-100V
OT-223
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description
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0866A
IRLL014
OT-223
08-Mar-07
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AN-994
Abstract: IRLL014
Text: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description
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0866A
IRLL014
OT-223
AN-994
IRLL014
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IRFL9014
Abstract: AN-994
Text: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier
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0863A
IRFL9014
OT-223
12-Mar-07
IRFL9014
AN-994
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marking 5y transistor
Abstract: transistor bc 241 transistor BF 243 CF-912 BC238C Telefunken u 237 SMA marking code 1R transistor bf 244
Text: TELEFUNKEN ELECTRONIC fllC D • electronic 81200% 000537» S Markedwith;CF3 U r 51 I £. Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers and mixers up to 2 GHz in common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
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569-GS
marking 5y transistor
transistor bc 241
transistor BF 243
CF-912
BC238C
Telefunken u 237
SMA marking code 1R
transistor bf 244
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D 823 transistor
Abstract: BF56 BF821S
Text: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power
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Untitled
Abstract: No abstract text available
Text: KF055 PF276-01 SCI7 7 OOYs.rte/SCI7701Ysè,i. CMOS VOLTAGE DETECTOR #Voltage Detector #Many Types #Low Operating Supply Current •DESCRIPTION The SCI7700Yseries/SCI7701YSeries are a series of low-power precision voltage detectors, which do not require external adjustments. The SCI7700Yseries/SCI7701Yseries have such applications as battery-life
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KF055
PF276-01
rte/SCI7701YsÃ
SCI7700Yseries/SCI7701YSeries
SCI7700Yseries
SCI7701Yseries
019Max
48Max)
02IMax
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Untitled
Abstract: No abstract text available
Text: 19-1280; Rev 1; 10/97 jv w y x a jv x _ F e a t u r e s The M AX6501-M AX6504 low-cost, fully integrated tem perature sw itches assert a logic signal when their die tem perature crosses a factory-program m ed threshold. O perating from a +2.7V to +5.5V supply, these devices
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AX6501-M
AX6504
SDT23,
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jd 1803 IC
Abstract: jd 1803 4 pin jd 1803 data 4 pins jd 1803 JD 1803 b Maxim Integrated Products jd 1803 mark HG SOT JD 1803 fy sot 143
Text: 19-2000; Rev 1; 1/99 > k i y i x i > k i O p e n - D r a i n S O T y P R e s e t Ci r cui t The M A X 6315 lo w -p o w e r C M O S m ic ro p ro c e s s o r pP s u p e rv is o ry c irc u it is d e s ig n e d to m o n ito r p o w e r s u p p lie s in pP and d ig ita l system s. It p ro v id e s e x c e lle n t c ir
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T-143.
MAX6315
jd 1803 IC
jd 1803 4 pin
jd 1803 data
4 pins jd 1803
JD 1803 b
Maxim Integrated Products jd 1803
mark HG SOT
JD 1803
fy sot 143
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MARKING MHT
Abstract: No abstract text available
Text: T IP 'N RING C eram ic C apacitors y* FEATURES • • • • • • • Ideal for telephone line Tip T4 Ring™ filtering Replaces high voltage leaded film capacitors Rated for telephone voltages Save board space and weight Surface mount (EIA sizes) packages
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VJ9427
VJ9174
VJ92J3
J9427
MARKING MHT
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R i FDN361AN N-Channel, Logic Level, PowerTrench1 General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDN361AN
OT-23
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Untitled
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDC6306P
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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