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    MARKING CODE 75C Search Results

    MARKING CODE 75C Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CD4527BNS Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV225URX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMH2100TM/NOPB Texas Instruments 50 MHz to 4 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-DSBGA -40 to 85 Visit Texas Instruments Buy
    LMV226UR/NOPB Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMV228SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON Visit Texas Instruments Buy
    LMV225SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85 Visit Texas Instruments Buy

    MARKING CODE 75C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF


    Original     		PDF

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    Untitled

    Abstract: No abstract text available
    Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)


    Original     		PDF

    5bge

    Abstract: 5bgm 33cA 5BFz
    Text: 5.0SMDJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 20 TO 170 Volts 5000Watts Peak Pulse Power DEVICE MARKING CODE 5.0SMDJ PART NUMBER 5.0SMDJ 20A Uni-polar Bi-polar REVERSE BREAKDO BREAKDO MAXIMUM REVERSE PEAK WN WN STANDTEST CLAMPING LEAKAGE


    Original     		PDF 5000Watts 50mVp-p 5bge 5bgm 33cA 5BFz

    Untitled

    Abstract: No abstract text available
    Text: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:52 Uhr Seite 69 75C 27. 310 00 A actual size VCXO JV75 • 3.3 Volt voltage controlled crystal oscillators features • package height 2.0 mm max. ■ tristate function type JV75 C305 JV75 B305 JV75 C310 frequency JV75 B310


    Original     		PDF HCJ/KA/A027E/2000

    Untitled

    Abstract: No abstract text available
    Text: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:52 Uhr Seite 71 75C 27. 510 00 A actual size VCXO JV75 • 5.0 Volt voltage controlled crystal oscillators features • package height 2.0 mm max. ■ tristate function type JV75 C505 JV75 B505 JV75 C510 frequency JV75 B510


    Original     		PDF HCJ/KA/A027E/2000

    TQ5300

    Abstract: TQG 14.31818 kony 8.000000 kony 30mhz crystal oscillator HC49U70 SUNNY 4.194304 KONY hc49s 6MHZ HC49U 16.000000 Mhz kony vcxo KONY crystal
    Text: Ordering information Return to product overview Resonator SMD All information subject to change Type CTT CV-MX Tape & Reel RoHS Conform External Dimensions Unit: mm Specifications Holder Type CTT CV-MX with Tape & Ree Frequency Range 10.000000 MHz internal capacitance C1, C2


    Original     		PDF 49-8121-77ail: HC49U, HC49S, HC493H, HC494H, HC49U-70 TQ5300 TQG 14.31818 kony 8.000000 kony 30mhz crystal oscillator HC49U70 SUNNY 4.194304 KONY hc49s 6MHZ HC49U 16.000000 Mhz kony vcxo KONY crystal

    avago marking bk

    Abstract: AVAGO MARKING E4 AN1124 MARKING 313 sc70 part marking ab sc-70 marking b5 sc70 marking code e5 sot363
    Text: HSMS-281x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to


    Original     		PDF HSMS-281x HSMS281x OT-323 SC70-3 OT-363 SC70-6 5989-4021EN AV02-1367EN avago marking bk AVAGO MARKING E4 AN1124 MARKING 313 sc70 part marking ab sc-70 marking b5 sc70 marking code e5 sot363

    AV02-0533EN

    Abstract: MARKING a4 SOT-23 diode marking code C3 sot23 marking code e5 sot363 HSMs-2 HSMS-282 AVAGO DATE CODE MARKING 0/AVAGO DATE CODE MARKING
    Text: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to


    Original     		PDF HSMS-280x HSMS-280x 5989-4020EN AV02-0533EN MARKING a4 SOT-23 diode marking code C3 sot23 marking code e5 sot363 HSMs-2 HSMS-282 AVAGO DATE CODE MARKING 0/AVAGO DATE CODE MARKING

    avago marking bk

    Abstract: AN1124 marking code nt jedec SC-70-6 package marking code tc sot 363 sc-70 package pcb layout sc70-3 PCB PAD part marking ab sc-70 sot 23 marking code NT
    Text: HSMS-281x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to


    Original     		PDF HSMS-281x HSMS281x OT-323 SC70-3 OT-363 SC70-6 5989-4021EN AV02-1367EN avago marking bk AN1124 marking code nt jedec SC-70-6 package marking code tc sot 363 sc-70 package pcb layout sc70-3 PCB PAD part marking ab sc-70 sot 23 marking code NT

    AN1124

    Abstract: 2805 diode bridge AK 061 jedec SC-70-6 package marking code nt A4 SOT363 diode marking code C3 sot23 marking code 54 marking code tc sot 363 sc-70 package pcb layout
    Text: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to


    Original     		PDF HSMS-280x HSMS280x OT-323 SC70-3 OT-363 SC70-6 5989-4020EN AV02-0533EN AN1124 2805 diode bridge AK 061 jedec SC-70-6 package marking code nt A4 SOT363 diode marking code C3 sot23 marking code 54 marking code tc sot 363 sc-70 package pcb layout

    2805 diode bridge

    Abstract: No abstract text available
    Text: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to


    Original     		PDF HSMS-280x HSMS280x OT-323 SC70-3 OT-363 SC70-6 5989-4020EN AV02-0533EN 2805 diode bridge

    fm18W08-pg

    Abstract: FM18W08
    Text: FM18W08 PDIP 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM18W08 256Kb 256Kbit 32Kx8 28-pin FM18ess fm18W08-pg FM18W08

    Untitled

    Abstract: No abstract text available
    Text: n FM16W08 PDIP 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM16W08 64Kbit 28-pin FM16Wess

    EXS00A-CS00871

    Abstract: NX3225 crystal EXS10B-08844A EXS10B NX3225 NX3225SA Nihon Dempa Kogyo TRACE CODE ON BOX PACKING LABEL EXH11B-00378 EXS00ACS00
    Text: Document No. EXS10B-08844A 1/8 SPECIFICATION Customer: General Spec Receipt Item: CRYSTAL UNIT Type: NX3225SA Nominal Frequency: 114.285 MHz Customer’s Spec. No.: NDK Spec. No.: EXS00A-CS00871 Charge: Sales Sales.Dept.1 Y.Shinohara Tel. 81- 0 3-5453-6737


    Original     		PDF EXS10B-08844A EXS00A-CS00871 NX3225SA EXS30B-00249G NX3225 crystal EXS10B NX3225 Nihon Dempa Kogyo TRACE CODE ON BOX PACKING LABEL EXH11B-00378 EXS00ACS00

    012 6V8A

    Abstract: 56A schottky sma P4SMA250C P4SMA130CA
    Text: WILLAS FM120-M+ THRU 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Series P4SMAFM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMA DO-214AC PACKAGE SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF FM120-M+ DO-214AC) OD-123+ FM1200-M OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 012 6V8A 56A schottky sma P4SMA250C P4SMA130CA

    CMSDM7590

    Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
    Text: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		PDF CMSDM3590 CMSDM7590 CMSDM3590 OT-323 CMSDM3590: CMSDM7590: 200mA marking CODE 75C Complementary MOSFETs logic level complementary MOSFET

    FM16W08

    Abstract: No abstract text available
    Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM16W08 64Kbit FM16W08, 00002G FM16W08-SG A103700002G FM16W08

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM16W08 64Kbit FM16W08 64-kilobit FM16W08, 00002G FM16W08-SG A103700002G

    FM16W08

    Abstract: FM16W08-SG AEC-Q100-002 MS-013
    Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM16W08 64Kbit FM16W08 64-kilobit 28-pin MS-013 FM16W08, 00002G FM16W08-SG FM16W08-SG AEC-Q100-002

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM16W08 64Kbit FM16W08 28-pin MS-013 FM16W08, 00002G FM16W08-SG A103700002G

    BZX 48c 6v8

    Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
    Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P


    OCR Scan     		PDF 2004C 2004S 2004D Z5250B T3904 Z5251B Z5252B Z5253B Z5254B Z5255B BZX 48c 6v8 PT2369 code Cj5 CMXZ11VTO 7006S