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    MARKING CODE 64 SOT23 6 Search Results

    MARKING CODE 64 SOT23 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    MARKING CODE 64 SOT23 6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423 PDF

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor PDF

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89 PDF

    TS SOT23

    Abstract: SOT-23 marking 2a SOT-23 2A 355 sot-23 Q62702-A879 diode marking 63s SOT23 Q62702-A963 Diode Marking C.3 66s sot23 sot 23 1a k
    Text: BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration BAT64-05 BAT 64-04 BAT64-06 ESD: ElectroStatic Discharge sensitive device, observe handling precautions!


    Original     		BAT64-05 BAT64-06 Q62702-A879 OT-23 Q62702-A961 Q62702-A962 Q62702-A963 TS SOT23 SOT-23 marking 2a SOT-23 2A 355 sot-23 Q62702-A879 diode marking 63s SOT23 Q62702-A963 Diode Marking C.3 66s sot23 sot 23 1a k PDF

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original     		DMN3051L AEC-Q10 PDF

    IRLML6346

    Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
    Text: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits


    Original     		96310C IRLML9301TRPbF OT-23) AN-994. IRLML6346 IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244 PDF

    IRF micro3

    Abstract: IRLML9301TRPBF
    Text: PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits


    Original     		96310C IRLML9301TRPbF OT-23) AN-994. IRF micro3 IRLML9301TRPBF PDF

    transistor cross ref

    Abstract: KST63
    Text: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage


    Original     		KST63/64 OT-23 KST63 KST64 Current64MTF transistor cross ref KST63 PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.4A<48mΩ  RDS(ON) , VGS@4.5V, ID@3.6A<53mΩ  RDS(ON) , VGS@2.5V, ID@2.5A<66mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ


    Original     		PPJA3402 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV PDF

    MARKING tAN SOT-23

    Abstract: TAN SOT-23
    Text: 1217 Reader's 4/30/02 11:13 AM Page 63 Precision Voltage Divider Network Applications • Voltage diversion ■ A/D conversion ■ Reference voltage ■ Matching resistors ■ Parametric control Electrical Characteristics E RTY SERIES Precision Voltage Divider Network


    Original     		OT-23 MARKING tAN SOT-23 TAN SOT-23 PDF

    marking 2u

    Abstract: 2U marking code KST63 marking 2U 20 diode marking 2U 40 diode marking 2U diode KST64 ST64 code marking 2U
    Text: KST63/64 KST63/64 Darlington Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage


    Original     		KST63/64 OT-23 marking 2u 2U marking code KST63 marking 2U 20 diode marking 2U 40 diode marking 2U diode KST64 ST64 code marking 2U PDF

    marking 2U 20 diode

    Abstract: KST63 2U marking code marking 2U 40 diode marking 2U diode KST64 ST64
    Text: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage


    Original     		KST63/64 OT-23 marking 2U 20 diode KST63 2U marking code marking 2U 40 diode marking 2U diode KST64 ST64 PDF

    KST63

    Abstract: marking 2U 20 diode marking 2U 40 diode marking 2U diode marking codes fairchild KST64 ST64 marking 2U
    Text: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage


    Original     		KST63/64 OT-23 KST63 marking 2U 20 diode marking 2U 40 diode marking 2U diode marking codes fairchild KST64 ST64 marking 2U PDF

    DMP2305U

    Abstract: DMP2305U-7
    Text: DMP2305U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 60mΩ @ VGS = -4.5V • 90mΩ @ VGS = -2.5V • 113mΩ @ VGS = -1.8V


    Original     		DMP2305U AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31737 DMP2305U DMP2305U-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 32mΩ @ VGS = 10V RDS(ON) < 42mΩ @ VGS = 4.5V RDS(ON) < 64mΩ @ VGS = 2.5V Low Gate Threshold Voltage


    Original     		DMN3052L AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31406 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 32m @ VGS = 10V RDS(ON) < 42m @ VGS = 4.5V RDS(ON) < 64m @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		DMN3052L AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31406 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		BAT64. BAT64 BAT64-02W BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W PDF

    BAT64-04

    Abstract: BAT64 BAT64-02W BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W SCD80
    Text: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		BAT64. BAT64 BAT64-02W BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W BAT64-04 BAT64 BAT64-02W BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W SCD80 PDF

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN PDF

    diode marking 63s SOT23

    Abstract: BAT 61 marking 301 sot-23 marking 65s sot-23 SOT23 Marking 64s bat 301 l marking code 64 sot23 6 65s sot23 marking 64 SOT23 Siemens ESP 100
    Text: SIEMENS B A T 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESP: Electrostatic Discharge sensitive device, observe handling precautions!


    OCR Scan     		Q62702-A879 Q62702-A961 Q62702-A962 Q62702-A963 OT-23 OT-23 50/60Hz, diode marking 63s SOT23 BAT 61 marking 301 sot-23 marking 65s sot-23 SOT23 Marking 64s bat 301 l marking code 64 sot23 6 65s sot23 marking 64 SOT23 Siemens ESP 100 PDF

    diode marking 63s SOT23

    Abstract: No abstract text available
    Text: SIEMENS BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration A1/A2 m nr Ordering Code Pin Configuration


    OCR Scan     		Q62702-A879 Q62702-A961 OT-23 Q62702-A962 Q62702-A963 AE35bD5 01203b0 diode marking 63s SOT23 PDF

    marking 64

    Abstract: sot23 HJA
    Text: Silicon Schottky Diode BAT 64 • For low-loss, fast-recovery rectifiers, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Type Marking Ordering code tape and reel BAT 64 64 Q 62702 - A879


    OCR Scan     		OT-23 43temperature I6-25V marking 64 sot23 HJA PDF

    PNP Epitaxial Silicon Transistor sot-23

    Abstract: 2u transistor KST63
    Text: KST63/64 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		KST63/64 OT-23 KST63 KST64 KST64 300ms, -10mA -100mA -100mA, PNP Epitaxial Silicon Transistor sot-23 2u transistor KST63 PDF