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    MARKING CODE 62A Search Results

    MARKING CODE 62A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CD4527BNS Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV225URX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMH2100TM/NOPB Texas Instruments 50 MHz to 4 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-DSBGA -40 to 85 Visit Texas Instruments Buy
    LMV226UR/NOPB Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMV228SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON Visit Texas Instruments Buy
    LMV225SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85 Visit Texas Instruments Buy

    MARKING CODE 62A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    Untitled

    Abstract: No abstract text available
    Text: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF


    Original     		PDF

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    Untitled

    Abstract: No abstract text available
    Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)


    Original     		PDF

    BCV62

    Abstract: No abstract text available
    Text: BCV 62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage C2 1 C1 (2) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Ordering Code


    Original     		PDF EHA00013 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 EHN00004 Feb-11-1998 EHP00939 EHP00941 BCV62

    Untitled

    Abstract: No abstract text available
    Text: PD - 95363 IRF3708PbF IRF3708SPbF IRF3708LPbF SMPS MOSFET Applications l l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for


    Original     		PDF IRF3708PbF IRF3708SPbF IRF3708LPbF IRF3708S O-220AB IRF3708 O-262 IRF3708L O-220AB

    72t02gh

    Abstract: 72T02GH mosfet 72t02gh Outline 72t02 mosfet 72t02gh 72T0 AP72T02 72T02GJ AP72T02GH AP-72
    Text: AP72T02GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance ▼ Fast Switching Characteristic BVDSS 25V RDS ON 9mΩ ID G 62A S Description Advanced Power MOSFETs from APEC provide the designer with


    Original     		PDF AP72T02GH/J O-252 AP72T02GJ) O-251 O-251 72T02GJ 72t02gh 72T02GH mosfet 72t02gh Outline 72t02 mosfet 72t02gh 72T0 AP72T02 72T02GJ AP72T02GH AP-72

    irgp4063d1

    Abstract: IRGP4063D IRGP4063
    Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive


    Original     		PDF IRGP4063D1PbF IRGP4063D1-EPbF IRGP4063D1PbF IRGP4063D1EPbF IRGP4063D1-EPbF IRGP4063D1PbF/IRGP4063D1-EPbF O-247AC O-247AD JESD47F) irgp4063d1 IRGP4063D IRGP4063

    IGBT gate driver welding

    Abstract: IRGP4063D
    Text: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive


    Original     		PDF IRGP4063D1PbF IRGP4063D1-EPbF IRGP4063D1PbF IRGP4063D1EPbF IRGP4063D1-EPbF IRGP4063D1PbF/IRGP4063D1-EPbF O-247AC O-247AD JESD47F) IGBT gate driver welding IRGP4063D

    AN-994

    Abstract: IRF3708 IRF3708L IRF3708S ED marking code diode 4.5v to 100v input regulator
    Text: PD - 93938B IRF3708 IRF3708S IRF3708L SMPS MOSFET Applications l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for


    Original     		PDF 93938B IRF3708 IRF3708S IRF3708L O-220AB O-262 Vol52-7105 AN-994 IRF3708 IRF3708L IRF3708S ED marking code diode 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: PD - 93938B IRF3708 IRF3708S IRF3708L SMPS MOSFET Applications l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for


    Original     		PDF 93938B IRF3708 IRF3708S IRF3708L O-220AB O-262

    AN-994

    Abstract: IRF3708 IRF3708L IRF3708S 4.5v to 100v input regulator
    Text: PD - 93938B IRF3708 IRF3708S IRF3708L SMPS MOSFET Applications l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max ID 30V 12mΩ 62A High Frequency Buck Converters for


    Original     		PDF 93938B IRF3708 IRF3708S IRF3708L O-220AB O-262 Vol20 AN-994 IRF3708 IRF3708L IRF3708S 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP0704GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D SO-8 Compatible with Heatsink Low On-resistance G RoHS-compliant, halogen-free BV DSS 40V R DS ON 7mΩ ID 62A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with


    Original     		PDF AP0704GMT-HF-3 AP0704 0704GMT

    TO247AC

    Abstract: IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302
    Text: PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP048N O-247 TO247AC IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks


    OCR Scan     		PDF BCV62 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 EHP00939 E35bGS D1HCH47

    BZX 48c 6v8

    Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
    Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P


    OCR Scan     		PDF 2004C 2004S 2004D Z5250B T3904 Z5251B Z5252B Z5253B Z5254B Z5255B BZX 48c 6v8 PT2369 code Cj5 CMXZ11VTO 7006S

    T0247AC

    Abstract: No abstract text available
    Text: kitemational PD 9.1409 SRectifier IRFP048N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = 0.016Î2 lD = 62A Description Fifth Generation HEXFETs from International Rectifier


    OCR Scan     		PDF IRFP048N O-247 61350BadHomburgTel: T0247AC

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier


    OCR Scan     		PDF IRFP048N O-247