Q62702-B664
Abstract: No abstract text available
Text: BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code BBY 52-03W I white Q62702-B664 Q62702- Pin Configuration 1=C
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2-03W
Q62702-B664
Q62702-
OD-323
Feb-04-1997
Q62702-B664
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Q62702-B599
Abstract: marking code 52 sot23 - 6
Text: BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s 1 = A1 Q62702-B599 Package 2 = A2 3 = C1/2 SOT-23
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Q62702-B599
OT-23
Jul-04-1996
Q62702-B599
marking code 52 sot23 - 6
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marking code B38
Abstract: No abstract text available
Text: ERB38 0.8A ( 400 to 600V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : White High reliability Applications Voltage class Lot No. Cathode mark 52
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ERB38
ERB38
marking code B38
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marking code B38
Abstract: ERB38
Text: ERB38 0.8A ( 400 to 600V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : White High reliability Applications Voltage class Lot No. Cathode mark 52
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ERB38
marking code B38
ERB38
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DIODE T4 marking
Abstract: Q62702-B0860 VES05991
Text: BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 1 VES05991 Type Marking Ordering Code Pin Configuration
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2-02W
VES05991
SCD-80
Q62702-B0860
Jul-23-1998
DIODE T4 marking
Q62702-B0860
VES05991
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DIODE T4 A1
Abstract: diode marking T4
Text: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration
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2-05W
VSO05561
EHA07179
OT-323
DIODE T4 A1
diode marking T4
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AH49F LINEAR HALL EFFECT IC Description Pin Assignments The AH49F is a small, versatile linear Hall-effect device that is operated by the magnetic field from a permanent magnet or an electromagnet. The output voltage is set by the supply voltage and
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AH49F
AH49F
DS36518
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smd diode schottky code marking l2
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-G Thru. SR5200-G Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device DO-27 Features -Axial lead type devices for through hole design. -Low power loss, high efficiency. -High current capability, Low forward voltage drop.
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SR520-G
SR5200-G
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
UL94V-0
SR520-G
SR540-G
smd diode schottky code marking l2
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Untitled
Abstract: No abstract text available
Text: DTA123 YM/YE/YUA/YCA/YSA PNP Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
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DTA123
OT-723
OT-523
31TYP
O-92S
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transistor package SOT-723
Abstract: dta123
Text: DTA123 YM/YE/YUA/YCA/YSA PNP Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
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DTA123
OT-723
OT-523
OT-323
OT-23
O-92S
transistor package SOT-723
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ZENER DIODE marking l2
Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
Text: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.
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1N5221B-G
1N5267B-G
-500mW
DO-35
DO-35
MIL-STD-750
13gram
QW-BZ001
1N5221-G
ZENER DIODE marking l2
zener voltage for diode 1N5231B
smd diode marking code g
SMD ZENER DIODE MARKING CODE G
SMD zener marking code 102
SILICON PLANAR zener diode DO-35
1N5222B SMD diode
Zener diode smd marking code 24
1N5239B SMD
1N5227B
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1N50xx
Abstract: SMD zener marking code 102
Text: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.
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1N5221B-G
1N5267B-G
DO-35
-500mW
MIL-STD-750
13gram
QW-BZ001
1N5221-G
1N50xx
SMD zener marking code 102
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sr5 diode
Abstract: No abstract text available
Text: Comchip Schottky Barrier Rectifier SMD Diode Specialist SR520-HF Thru. SR5200-HF Forward current: 5.0A Reverse voltage: 20 to 200V RoHS Device Halogen Free DO-27 Features 0.052 1.30 0.048(1.20) -Axial lead type devices for through hole design. -Low power loss, high efficiency.
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SR520-HF
SR5200-HF
DO-27
MIL-STD-19500/228
DO-201AD/DO-27
SR520-HF
SR540-HF
SR560-HF
sr5 diode
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diode sod* marking code 84
Abstract: marking JL sod123 CMHZ5229B cm5 marking CMHZ5265B
Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface
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CMHZ5221B
CMHZ5267B
500mW,
OD-123
CMH00
diode sod* marking code 84
marking JL sod123
CMHZ5229B
cm5 marking
CMHZ5265B
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marking 51
Abstract: DS30258 marking 52
Text: BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE NEW PRODUCT Features • · Ultra-Small Surface Mount Package Very Low Leakage Current SOT-523 TOP VIEW Mechanical Data · · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating
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BAS116T,
BAW156T,
BAV170T,
BAV199T
OT-523
OT-523,
MIL-STD-202,
W156T,
marking 51
DS30258
marking 52
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3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather
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Infineo866-95
B152-H8926-G2-X-7600
NB08-1069
3bs02
2bs01
08P06P
TDA 16888
ICE2pcs02
tda16846
ICE3B1565J
mosfet 18p06p
TDA4605
ICE3B0365J
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BAS116T
Abstract: BAS116T-7 BAV170T BAV199T BAW156T J-STD-020A marking 030
Text: BAS116T, BAW156T, BAV170T, BAV199T SURFACE MOUNT LOW LEAKAGE DIODE NEW PRODUCT Features • · Ultra-Small Surface Mount Package Very Low Leakage Current SOT-523 A · · · · · · Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 C Mechanical Data
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BAS116T,
BAW156T,
BAV170T,
BAV199T
OT-523
OT-523,
J-STD-020A
MIL-STD-202,
000/Tape
BAV199T-7
BAS116T
BAS116T-7
BAV170T
BAV199T
BAW156T
J-STD-020A
marking 030
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diode 447
Abstract: 446 DIODE 448 diode BBY 52-03W
Text: SIEMENS BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52-03W 1 white Q62702-B664 1=C
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OCR Scan
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PDF
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2-03W
Q62702-B664
OD-323
diode 447
446 DIODE
448 diode
BBY 52-03W
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 52-03W Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 52-03W Marking Ordering Code Pin Configuration Package 1 white Q62702-B664
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OCR Scan
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PDF
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2-03W
Q62702-B664
OD-323
235b05
BE35LGS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2
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OCR Scan
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PDF
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Q62702-B632
OT-23
H35bDS
02BSbOS
BBY52
aE35b05
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15025
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. 5 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 R 52 Q62702-A804
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OCR Scan
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PDF
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Q62702-A804
Q62702-A809
Q62702-A812
Q62702-A806
EHA07009
15025
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A235L
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. 5 D • Beam lead technology • Low dimension • High performance • Low barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 D 52 D
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OCR Scan
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PDF
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VCE05181
Q62702-A803
Q62702-A798
Q62702-A807
Q62702-A811
EHA07010
Sto115
DDbbb35
A235L
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation • For V C O ’s in mobile communications equipment Type Marking Ordering Code Pin Configuration
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OCR Scan
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PDF
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2-02W
Q62702-B0860
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Text: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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OCR Scan
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00-4KQ
DO-34
RB441Q
RB721Q
DO-340USD]
RB100A
T0220FP
RB015T-40
R8026T-40
1N4146
ZP33A
TZP33A
zp 33a
1n9638
zp 278
1N52438
TZP10A
MTZJ 188
MTZJ 248
1N6233
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