gali-3
Abstract: Gali-6 GALI-52 marking code 4f amplifier DF782
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali 1 21 2 33 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ.
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DF782
Abstract: GALI-33 gali 01 GALI-21 Gali-52 Gali-6 Gali-S66 GALI 66 gali64 Monolithic Amplifier DF782
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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GALI-19
Abstract: GALI-21 j 122 Gali-S66 gali64 GALI 66 Gali-4 GALI-51
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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MMIC SOT 89 marking CODE 02
Abstract: marking code 4f amplifier Gali-6 gali64 GALI-5 marking 5F 2939 sot k1ga MMIC SOT 143 marking CODE 4f
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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marking code 4f amplifier
Abstract: No abstract text available
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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DF782
Abstract: GALI-1 GALI-5 GALI-51
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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DF782
Abstract: GALI-55 Gali-6
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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gali64
Abstract: mmic marking code DF782 Gali-6
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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DF782
Abstract: Monolithic Amplifier DF782 MZ 251 gali-74
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali 1 19 21 29 2 33 39 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz*
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Gali-59
Gali-74
DF782
Monolithic Amplifier DF782
MZ 251
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GALI 66
Abstract: Monolithic Amplifier DF782 DF782 gali 4f MMIC marking CODE 74
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ.
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FMBT3904
Abstract: Formosa MS
Text: FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC003 Issued Date : 2002/12/25 Revised Date : Page No. : 1/3 Formosa MS FMBT3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The FMBT3904 is designed for general purpose switching amplifier applications. Absolute Maximum Ratings
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FMSC003
FMBT3904
FMBT3904
OT-23
UL94V-0
Formosa MS
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FMBT3906
Abstract: No abstract text available
Text: FORMOSA MICROSEMI CO., LTD. Spec. No. : FMSC001 Issued Date : 2002/12/13 Revised Date : 2002/12/25 Page No. : 1/3 Formosa MS FMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The FMBT3906 is designed for general purpose switching and amplifier applications.
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FMSC001
FMBT3906
FMBT3906
OT-23
UL94V-0
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Untitled
Abstract: No abstract text available
Text: BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique
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BC847BPDXV6,
SBC847BPDXV6
OT-563
AEC-Q101
BC847BPDX6T1
BC847BPDXV6T1/D
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BC847BPDXV6T1
Abstract: BC847BPDXV6T5
Text: BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual Complimentary http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications.
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BC847BPDXV6T1,
BC847BPDXV6T5
OT-563
BC847BPDX6T1
BC847CBPDXV6T1/D
BC847BPDXV6T1
BC847BPDXV6T5
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Untitled
Abstract: No abstract text available
Text: BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual Complementary This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating
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BC847BPDXV6T1,
BC847BPDXV6T5
BC847BPDX6T1
BC847CBPDXV6T1/D
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BC847BPDXV6T1G
Abstract: Surface mount NPN/PNP complementary transistor BC847BPDXV6T1 BC847BPDXV6T5 BC847BPDXV6T5G
Text: BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual Complementary This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating
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BC847BPDXV6T1,
BC847BPDXV6T5
OT-563
BC847BPDX6T1
BC847CBPDXV6T1/D
BC847BPDXV6T1G
Surface mount NPN/PNP complementary transistor
BC847BPDXV6T1
BC847BPDXV6T5
BC847BPDXV6T5G
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AH49E
Abstract: HALL-EFFECT IC TO92S package "metal detector" AH49EZ3-E1 AH49EZ3-G1 AH49G Metal Detector
Text: Preliminary Datasheet LINEAR HALL-EFFECT IC AH49E General Description Features The AH49E is a small, versatile linear Hall-effect device that is operated by the magnetic field from a permanent magnet or an electromagnet. The output voltage is set by the supply voltage and varies in proportion to the strength of the magnetic field.
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AH49E
AH49E
-40oC
HALL-EFFECT IC
TO92S package
"metal detector"
AH49EZ3-E1
AH49EZ3-G1
AH49G
Metal Detector
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TO92S package
Abstract: HALL-EFFECT IC Hall sensors marking code 1203
Text: Data Sheet LINEAR HALL-EFFECT IC AH49E General Description Features The AH49E is a small, versatile linear Hall-effect device that is operated by the magnetic field from a permanent magnet or an electromagnet. The output voltage is set by the supply voltage and varies in proportion to the strength of the magnetic field.
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AH49E
-40oC
O-92S
OT23-3
TO92S package
HALL-EFFECT IC
Hall sensors marking code 1203
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Monolithic Amplifier DF782
Abstract: DF782 GALI-74
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali Gali Gali Gali MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ.
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Gali-59
Gali-74
Monolithic Amplifier DF782
DF782
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Untitled
Abstract: No abstract text available
Text: Data Sheet LINEAR HALL-EFFECT IC AH49E General Description Features The AH49E is a small, versatile linear Hall-effect device that is operated by the magnetic field from a permanent magnet or an electromagnet. The output voltage is set by the supply voltage and varies in proportion to the strength of the magnetic field.
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AH49E
AH49E
-40oC
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2F PNP SOT23
Abstract: MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS SMD MARKING CODE 4E marking codes SOT iSS marking c7 sot-23 MARKING H7 SOT-23
Text: IOW NOISE SMI TRANSISTORS DESCRIPTION •Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed lowcurrent specifications for noise, gain and saturation voltages.
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PMBT5089
BC849B
BC849C
PMBT5088
BCF32
BCF33
BC850B
BC850C
BCF81
PMBT6429
2F PNP SOT23
MARKING 2F SOT23
4A SMD CODE SOT23
4G SOT-23
marking code 4f sot23
marking codes transistors iSS
SMD MARKING CODE 4E
marking codes SOT iSS
marking c7 sot-23
MARKING H7 SOT-23
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bc860
Abstract: MARKING CODE 3J marking 4A
Text: ITT SEMICOND/ INTERMETALL SDE T> • Mbñ2711 0DD2S'ì4 b’iG M I S I T - a q - i s BC856 . . . BC860 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits.
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BC856
BC860
BC856
BC857,
BC858,
BC859
BC860
BC846
MARKING CODE 3J
marking 4A
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BC859R
Abstract: 7Z66 BCB60 BC860 BC860AR BC859 silicon planar epitaxial transistors
Text: I N AMER PHILIPS/DISCRETE ^53^31 J^EJ D01SSMS 7 BC859 BC860 T '- a i- is * SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 envelope, primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.
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D01SSMS
BC859
BC860
OT-23
BC859;
BC860;
7z66676
ttS3T31
BC859R
7Z66
BCB60
BC860
BC860AR
silicon planar epitaxial transistors
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Untitled
Abstract: No abstract text available
Text: btS 3 T 31 □D 1 SS 4 S 7 OLE D N AUER PHILIPS/DISCRETE r - SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 envelope, primarily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.
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OT-23
BC859
BC860
bbS3T31
BC859;
BC860;
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