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    MARKING CODE 3C DIODE SM Search Results

    MARKING CODE 3C DIODE SM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE 3C DIODE SM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF5800

    Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
    Text: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF IRF5802 AN1001) IRF5800 IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6

    gblc

    Abstract: Ethernet Control
    Text: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY DESCRIPTION The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.


    Original     		PDF GBLC03 GBLC24C OD-323 gblc Ethernet Control

    Untitled

    Abstract: No abstract text available
    Text: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY DESCRIPTION The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.


    Original     		PDF GBLC03 GBLC24C OD-323

    zener smd marking 2x

    Abstract: 3H DIODE smd smd diode marking 2J smd 27 3e diode sod323 diode marking code 2E 1Z 116 MM3Z10 MM3Z11 MM3Z12 MM3Z13
    Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic


    Original     		PDF MM3Z120 OD-323 OD-323 zener smd marking 2x 3H DIODE smd smd diode marking 2J smd 27 3e diode sod323 diode marking code 2E 1Z 116 MM3Z10 MM3Z11 MM3Z12 MM3Z13

    GBLC03C

    Abstract: No abstract text available
    Text: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.


    Original     		PDF GBLC03 GBLC24C OD-323 GBLC03C

    diode marking r14

    Abstract: No abstract text available
    Text: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.


    Original     		PDF GBLC03 GBLC24C OD-323 diode marking r14

    Untitled

    Abstract: No abstract text available
    Text: 05126 GBLC03 - GBLC24C Only One Name Means ProTek’Tion ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and SMART phones. This series is available in both unidirectional and bidirectional configurations and is rated at 350 Watts for an 8/20µs waveshape.


    Original     		PDF GBLC03 GBLC24C OD-323

    smd diode marking 2J

    Abstract: 5V6 DIODE MM3Z ZENER DIODE Datasheet Zener diode smd marking 07 sod323 diode marking code 2E 1P SMD CODE MARKING 3H DIODE smd 6V2 Zener Diode DIODE ZENER smd marking 72 smd transistor marking 1p
    Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic


    Original     		PDF MM3Z120 OD-323 OD-323 smd diode marking 2J 5V6 DIODE MM3Z ZENER DIODE Datasheet Zener diode smd marking 07 sod323 diode marking code 2E 1P SMD CODE MARKING 3H DIODE smd 6V2 Zener Diode DIODE ZENER smd marking 72 smd transistor marking 1p

    3H DIODE smd

    Abstract: 1Z 116 marking code B0 SMD diode smd diode marking 2J zener smd marking 2x MM3Z10 MM3Z11 MM3Z12 MM3Z120 MM3Z13
    Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic


    Original     		PDF MM3Z120 OD-323 OD-323 3H DIODE smd 1Z 116 marking code B0 SMD diode smd diode marking 2J zener smd marking 2x MM3Z10 MM3Z11 MM3Z12 MM3Z120 MM3Z13

    smd zener diode code 2J

    Abstract: Zener diode smd marking code 2A sod323 diode marking code 2E 3H DIODE smd smd diode marking 2J smd diode sod-323 marking code 2j ZENER 2V7 diode smd 3H DIODE SMD CODE MARKING 1e diode zener 8v2
    Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic


    Original     		PDF MM3Z120 OD-323 OD-323 smd zener diode code 2J Zener diode smd marking code 2A sod323 diode marking code 2E 3H DIODE smd smd diode marking 2J smd diode sod-323 marking code 2j ZENER 2V7 diode smd 3H DIODE SMD CODE MARKING 1e diode zener 8v2

    STMicroelectronics supressor

    Abstract: SMTY18AM
    Text: SMTY18AM LOW FORWARD VOLTAGE TVS: Transky FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High peak pulse power: 400W 8/20µs Stand-off voltage 16V Low forward voltage: 0.48V @ 0.85A @ 25°C Low clamping factor VCL/VBR A K Fast response time Very thin package (1.0mm overall component


    Original     		PDF SMTY18AM DO-216AA) STMicroelectronics supressor SMTY18AM

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FK8V0303 Silicon N-channel MOS FET For DC-DC Converter circuits • Overview  Package FK8V0303 is N-channel single type small signal MOS FET adopted small size surface mounting package. 


    Original     		PDF 2002/95/EC) FK8V0303 FK8V0303 FK8V03030L

    IRF5820

    Abstract: SI3443DV IRF5800 IRF5850
    Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3947A IRF5850 IRF5850 OT-23 IRF5820 SI3443DV IRF5800

    CDSOD323-T05C

    Abstract: No abstract text available
    Text: NT IA PL CO M Ro HS * Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones


    Original     		PDF CDSOD323-TxxC OD323 OD-323 CDSOD323-T05C

    CDSOD323-T05C

    Abstract: T18C CDSOD323-T08 CDSOD323-T08C CDSOD323-T12 CDSOD323-T12C CDSOD323-T03 CDSOD323-T03C CDSOD323-T05 CDSOD323-TXXC
    Text: T PL IA N M CO * Ro HS Features • ■ ■ ■ ■ ■ Applications Lead free as standard* Protects 1 line or 1 I/O port Bidirectional configuration ESD protection >40 kV Low capacitance ~3 pF typical Replaces 0805 MLV devices ■ ■ ■ ■ ■ Cell phones


    Original     		PDF CDSOD323-TxxC OD323 OD-323 CDSOD323-T05C T18C CDSOD323-T08 CDSOD323-T08C CDSOD323-T12 CDSOD323-T12C CDSOD323-T03 CDSOD323-T03C CDSOD323-T05 CDSOD323-TXXC

    STTH1L06

    Abstract: AN1471 STTH1L06A STTH1L06RL STTH1L06U HL6 marking C28D marking code 3c diode smb
    Text: STTH1L06/U/A TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600 V IR (max) 75 µA Tj (max) 175 °C VF (max) 1.05 V trr (max) 80 ns SMB STTH1L06U DO-41 STTH1L06 FEATURES AND BENEFITS • ■ ■ ■ Ultrafast switching


    Original     		PDF STTH1L06/U/A STTH1L06U DO-41 STTH1L06 STTH1L06/U/A, STTH1L06A STTH1L06 AN1471 STTH1L06A STTH1L06RL STTH1L06U HL6 marking C28D marking code 3c diode smb

    Si1912EDH

    Abstract: No abstract text available
    Text: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated


    OCR Scan     		PDF SM912EDH SC-70 OT-363 SC-70 Conduction25° S-03176-- 05-Mar-01 1912EDH 05-Mar-01 Si1912EDH

    SM305

    Abstract: No abstract text available
    Text: SM 305_ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V ) -8 •d ( A ) r D S {o n ) ( & ) 0.280 @ VGS = -4 .5 V ± 0 .9 2 0.380 @ V 6S = -2 .5 V ± 0 .7 9 0.530 @ V Gs = -1 -8 V ± 0 .6 7 \* A SOT-323 SC-70 (3-LEADS)


    OCR Scan     		PDF OT-323 SC-70 S-63638-- 01-Nov-99 SM305 SM305

    Untitled

    Abstract: No abstract text available
    Text: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V


    OCR Scan     		PDF PD-91816 IRFIB5N65A

    Untitled

    Abstract: No abstract text available
    Text: PD-91902 International IO R Rectifier SMPS MosFET IR F 7 3 0 A HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SM PS Uninterruptable Power Supply High speed pow er switching V dss 400V Rds(on) max Id 1.0i2 5.5A Benefits • Low Gate Charge Qg results in Simple


    OCR Scan     		PDF PD-91902 AN1001)

    SII907

    Abstract: 223S
    Text: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8


    OCR Scan     		PDF OT-363 SC-70 150cC S-99184--Rev. 01-Nov-99 S-99184-- SII907 223S

    Untitled

    Abstract: No abstract text available
    Text: In te rn a tio n a l p d - s i 265h lO R R e c tifi Gf PRELIMINARY IR F 7 5 0 1 HEXFET Power MOSFET • • • • • • • G eneration V Technology Ulrtra Low O n-Resistance Dual N-Channel M O SFET Very Small SO IC Package Low Profile < 1 .1 mm A vailable in Tape & Reel


    OCR Scan     		PDF

    sot363 marking qs

    Abstract: No abstract text available
    Text: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package


    OCR Scan     		PDF 1913EDH SC-70 OT-363 SC-70 S-03175-- 05-Mar-01 SM913EDH sot363 marking qs

    LD 25 V

    Abstract: SM410
    Text: SÌ1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) Id (A) * D S (o n ) ( ^ ) 20 • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package 0.070 @ V GS = 4.5 V


    OCR Scan     		PDF 1410EDH SC-70 OT-363 SC-70 S-03185-- 05-Mar-01 LD 25 V SM410