Untitled
Abstract: No abstract text available
Text: Radial Leaded & Snap-in Back-Up Capacitors NEDZN Series FEATURES • HIGH POWER AND LOW INTERNAL RESISTANCE • HIGH CAPACITANCE UP TO 200F • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range
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NEDZN275Z2
5V8X22F
NEDZN207Z2
5V35X50F
275Z2
5V8X22F
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marking D
Abstract: MARKING CODE 200F Z 27V
Text: Radial Leaded & Snap-in Back-Up Capacitors NEDZN Series FEATURES • HIGH POWER AND LOW INTERNAL RESISTANCE • HIGH CAPACITANCE UP TO 200F • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range
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NEDZN275Z2
5V8X22F
NEDZN207Z2
5V35X50F
275Z2
5V8X22F
marking D
MARKING CODE 200F
Z 27V
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Capacitors
Abstract: NEDZN
Text: Radial Leaded & Snap-in Back-Up Capacitors NEDZN Series FEATURES • HIGH POWER AND LOW INTERNAL RESISTANCE • HIGH CAPACITANCE UP TO 200F • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range
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NEDZN275Z2
5V8X22F
NEDZN207Z2
5V35X50F
275Z2
Capacitors
NEDZN
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Untitled
Abstract: No abstract text available
Text: Radial Leaded & Snap-in Back-Up Capacitors NEDZN Series FEATURES • HIGH POWER AND LOW INTERNAL RESISTANCE • HIGH CAPACITANCE UP TO 200F • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range
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NEDZN275Z2
5V8X22F
NEDZN207Z2
5V35X50F
275Z2
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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Electric Double Layer Capacitors, Radial Lead Type
Abstract: No abstract text available
Text: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " UM Radial Lead Type, High Voltage series UM High voltage type 2.7V . Suitable for quick charge and discharge. Wide temperature range (– 25 to +70°C). Compliant to the RoHS directive (2011/65/EU). Smaller UW Specifications
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2011/65/EU)
Electric Double Layer Capacitors, Radial Lead Type
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Electric Double Layer Capacitors, Radial Lead Type
Abstract: No abstract text available
Text: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " UM Radial Lead Type, High Voltage series UM High voltage type 2.7V . Suitable for quick charge and discharge. Wide temperature range (– 25 to +70°C). Compliant to the RoHS directive (2002/95/EC). Smaller UW Specifications
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2002/95/EC)
30minuite
8100B
Electric Double Layer Capacitors, Radial Lead Type
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Capacitors
Abstract: No abstract text available
Text: NEDZ Series NEDZH Series Radial Leaded & Snap-in Back-Up Capacitors FEATURES • HIGH POWER • HIGH CAPACITANCE UP TO 300F • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance
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Untitled
Abstract: No abstract text available
Text: NEDZ Series NEDZH Series Radial Leaded & Snap-in Back-Up Capacitors FEATURES • HIGH POWER • HIGH CAPACITANCE UP TO 300F • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance
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NEDZH307Z2
Abstract: No abstract text available
Text: NEDZ Series NEDZH Series Radial Leaded & Snap-in Back-Up Capacitors FEATURES • HIGH POWER • HIGH CAPACITANCE UP TO 300F • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance
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AN1235
Abstract: AN1751 EMIF04-MMC02 EMIF04-MMC02F2
Text: EMIF04-MMC02F2 4 LINES EMI FILTER INCLUDING ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required: • MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players.
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EMIF04-MMC02F2
EMIF04-MMC02
EMIF04
AN1235
AN1751
EMIF04-MMC02F2
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Standard Rectifiers with ESD Capability I INNOVAT AND TEC O L OGY SE20AFJ and SE30AFJ N HN Diodes O 19 62-2012 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package
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SE20AFJ
SE30AFJ
SE30AFJ
AEC-Q101
17-Aug-12
SE30AFB
SE30AFD
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JESD 201 class 1A
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes SE20AFJ and SE30AFJ 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package KEY BENEFITS • • • • • • • • High current density ESD capability
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SE20AFJ
SE30AFJ
SE30AFJ
AEC-Q101
SE20AFJ
17-Aug-12
SE30AFB
JESD 201 class 1A
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Date Code Marking STMicroelectronics
Abstract: AN1235 AN1751 EMIF04-MMC02 EMIF04-MMC02F2
Text: EMIF04-MMC02F2 4 LINES EMI FILTER INCLUDING ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required: • MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players.
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EMIF04-MMC02F2
EMIF04-MMC02
EMIF04
Date Code Marking STMicroelectronics
AN1235
AN1751
EMIF04-MMC02F2
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R20 marking
Abstract: AN1235 EMIF04-MMC02F1
Text: EMIF04-MMC02F1 IPADTM 4 LINES EMI FILTER INCLUDING ESD PROTECTION MAIN APPLICATION MULTIMEDIACARD • DESCRIPTION The EMIF04-MMC02F1 is a highly integrated array designed to suppress EMI / RFI noise for MULTIMEDIACARD™ port filtering. The EMIF04-MMC02F1 flip-chip packaging means
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EMIF04-MMC02F1
EMIF04-MMC02F1
IEC61000-4-2cs.
R20 marking
AN1235
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Untitled
Abstract: No abstract text available
Text: PRODUCT: SESD1004Q4UG-0020-090 Multi-Channel DOCUMENT: SCD28424 REV LETTER: A REV DATE: NOVEMBER 6, 2012 PAGE NO.: PAGE 1 OF 6 Silicon ESD Protector 308 Constitution Drive Menlo Park, CA USA www.circuitprotection.com Overvoltage Protection Device Specification Status: RELEASED
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SESD1004Q4UG-0020-090
SCD28424
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DPG20C400PB
Abstract: DPG20C400PC DPG20C400PN
Text: DPG20C400PC HiPerFRED² VRRM = 400 V I FAV = 2x 10 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG20C400PC Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips
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DPG20C400PC
O-263
60747and
20131101a
DPG20C400PB
DPG20C400PC
DPG20C400PN
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Untitled
Abstract: No abstract text available
Text: DPG10P400PJ HiPerFRED² VRRM = 2x 400 V I FAV = 10 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number DPG10P400PJ Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS220 ● Planar passivated chips
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DPG10P400PJ
ISOPLUS220
Erec15
60747and
20131101a
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Untitled
Abstract: No abstract text available
Text: PRODUCT: SESD0802Q4UG-0020-090 Multi-Channel DOCUMENT: SCD28189 REV LETTER: D REV DATE: JUNE 20, 2012 PAGE NO.: PAGE 1 OF 6 Silicon ESD Protector 308 Constitution Drive Menlo Park, CA USA www.circuitprotection.com Overvoltage Protection Device Specification Status: RELEASED
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SESD0802Q4UG-0020-090
SCD28189
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Untitled
Abstract: No abstract text available
Text: PRODUCT: SESD1103Q6UG-0020-090 Multi-Channel DOCUMENT: SCD28191 REV LETTER: D REV DATE: JUNE 18, 2012 PAGE NO.: PAGE 1 OF 6 Silicon ESD Protector 308 Constitution Drive Menlo Park, CA USA www.circuitprotection.com Overvoltage Protection Device Specification Status: RELEASED
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SESD1103Q6UG-0020-090
SCD28191
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Untitled
Abstract: No abstract text available
Text: PRODUCT: SESD1004Q4UG-0020-090 Multi-Channel DOCUMENT: SCD28190 REV LETTER: OBSOLETE E REV DATE: JUNE 7, 2012 PAGE NO.: PAGE 1 OF 6 Silicon ESD Protector 308 Constitution Drive Menlo Park, CA USA www.circuitprotection.com Overvoltage Protection Device Specification Status: RELEASED
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SESD1004Q4UG-0020-090
SCD28190
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CF-400
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC aie T> a ^ O O S b GDDS3b7^ 3 • AL66 CF 400 m i » ! » electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 G Hz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with
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chip t4 3570
Abstract: No abstract text available
Text: 1% Chip Resistor m iniver 0402 to 1206 Size E24 Values 10.0X01 510 H .o x o t 511 12.0X0 855 13.0X01513 15.0X01515 16.0X0 856 18.0X0 857 20.0X0 1 520 22.0X0 858 24.0X0 859 27.0X0 860 30.0X0 861 33.0X0 862 36.0X0 863 39.0X0 864 43.0X0 865 47.0X0 866 51.0X0 867
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0X01513
0X01515
100X01
120X0
130X01
150X01
160X0
180X0
200X01
220X0
chip t4 3570
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code res pack 8
Abstract: GF06P GF06P103 GF06
Text: S e rie s G F 0 6 Available in tape and reel, magazine, and ammo pack for automatic insertion. Auto adjusting capabilities. 14 pin configurations including the popular 3/8 inch styles. Zero backlash. Sealed to withstand wave soldering and immersion cleaning.
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UL-94V-0
100ft
100ppm/
200ft
250ppm/
000Mft
code res pack 8
GF06P
GF06P103
GF06
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