C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001S thru 1N4007S Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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1N4001S
1N4007S
2011/65/EU
2002/96/EC
JESD22-B102
D1402005
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001S - 1N4007S CREAT BY ART 1.0 AMP. Silicon Rectifiers A-405 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss φ0.6mm leads Green compound with suffix "G" on packing code & prefix "G" on datecode
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Original
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1N4001S
1N4007S
MIL-STD-202,
4001S
4002S
4003S
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001SG - 1N4007SG CREAT BY ART 1.0 AMP. Glass Passivated Rectifiers A-405 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss φ0.6mm leads Green compound with suffix "G" on packing
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Original
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1N4001SG
1N4007SG
MIL-STD-202,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001 - 1N4007 CREAR BY ART 1.0 AMPS. Silicon Rectifiers DO-41 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data
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Original
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1N4001
1N4007
DO-41
MIL-STD-202,
1N4001
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Untitled
Abstract: No abstract text available
Text: 1N4001G - 1N4007G CREAT BY ART 1.0 AMP. Glass Passivated Rectifiers DO-41 Features Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing
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Original
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1N4001G
1N4007G
DO-41
DO-41
MIL-STD-202,
260/10s
1N400xG
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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Original
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
AEC-Q101
JESD22-B102
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PDF
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1n4007s
Abstract: in 4007s
Text: 1N4001S thru 1N4007S Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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1N4001S
1N4007S
2011/65/EU
2002/96/EC
JESD22-B102
D1401031
1n4007s
in 4007s
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: 1N4001SG thru 1N4007SG Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - φ0.6mm leads - Compliant to RoHS Directive 2011/65/EU and
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Original
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1N4001SG
1N4007SG
2011/65/EU
2002/96/EC
JESD22-B102
D1407028
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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Original
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1310025
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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Original
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1310025
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001 - 1N4007 Pb 1.0 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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Original
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1N4001
1N4007
DO-41
MIL-STD-202,
1N400X
1N4007)
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PDF
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1N4007SG
Abstract: 1N4001SG
Text: 1N4001SG - 1N4007SG CREAT BY ART Pb 1.0 AMP. Glass Passivated Rectifiers A-405 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss φ0.6mm leads
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Original
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1N4001SG
1N4007SG
MIL-STD-202,
260/10s
1N400XSG
1N4007SG
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4001SG - 1N4007SG Pb 1.0 AMP. Glass Passivated Rectifiers A-405 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss 0.6mm leads Green compound with suffix "G" on packing
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Original
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1N4001SG
1N4007SG
MIL-STD-202,
1N400XSG
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PDF
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1N4001G
Abstract: 1N4007G 4002G 4005G
Text: 1N4001G - 1N4007G CREAT BY ART Pb 1.0 AMP. Glass Passivated Rectifiers DO-41 RoHS COMPLIANCE Features Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing
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Original
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1N4001G
1N4007G
DO-41
MIL-STD-202,
1N400XG
260/10s
1N4007G
4002G
4005G
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PDF
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1N4001G
Abstract: 1N4007G 4002G
Text: TAIWAN SEMICONDUCTOR 1N4001G - 1N4007G 1.0 A M P G lass P assivated R ectifiers RoHS DO-41 COMPLIANCE -E Ü - .1 0 7 2 7 .0 8 0 f2 0) 1.0 (2S.4) MIN UIA Features Glass passivated chip junction High current capability, Low VF. <• High reliability & Current capability.
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OCR Scan
|
1N4001G
1N4007G
DO-41
DO-41
MIL-STD-202,
1N4007G)
1N4007G
4002G
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PDF
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1N4007SG
Abstract: 1N4001SG A-405 1N4004SG
Text: is 1N4001SG - 1N4007SG TAIWAN SEMICONDUCTOR 1.0 AMP. Glass Passivated Rectifiers A-405 RoHS COMPLIANCE -SBFeatures -v" -Y - -Y - Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability
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OCR Scan
|
1N4001SG
1N4007SG
MIL-STD-202,
1N4007SG)
A-405
1N4004SG
|
PDF
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1N4001G
Abstract: 1N4007G 4002G 4005G 4007G
Text: IM TAIWAN SEMICONDUCTOR 1N4001G - 1N4007G 1.0 AMP. Glass Passivated Rectifiers DO-41 RoHS COMPLIANCE Features -$• -$• -$■ Glass passivated chip junction. High current capability, Low VF Current capability High reliability High surge current capability
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OCR Scan
|
1N4001G
1N4007G
DO-41
MIL-STD-202,
1N400XG
1N4007G)
4002G
4005G
4007G
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PDF
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