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Abstract: No abstract text available
Text: Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV50UPE
O-236AB)
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Untitled
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Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV185XN
O-236AB)
gate-sou15
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Abstract: No abstract text available
Text: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV170UN
O-236AB)
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Abstract: No abstract text available
Text: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65UN
O-236AB)
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NX7002AK
Abstract: smd code marking sot23 SMD MARKING QG 6 PIN
Text: NX7002AK 60 V, single N-channel Trench MOSFET 10 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX7002AK
O-236AB)
NX7002AK
smd code marking sot23
SMD MARKING QG 6 PIN
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Untitled
Abstract: No abstract text available
Text: NX7002AK 60 V, single N-channel Trench MOSFET 13 December 2012 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX7002AK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 NX7002AK 60 V, single N-channel Trench MOSFET 13 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX7002AK
O-236AB)
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placeholder for manufacturing site code
Abstract: No abstract text available
Text: PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV50UPE
O-236AB)
placeholder for manufacturing site code
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV48XPA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 8 August 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX7002BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: NXS7002AK 60 V, single N-channel Trench MOSFET 25 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NXS7002AK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX7002BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSH111BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSN20BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138AKA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV170UN
O-236AB)
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PMV40UN2
Abstract: No abstract text available
Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV40UN2
O-236AB)
PMV40UN2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type
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BBY51
Q62702-B631
OT-23
fl235bOS
23Sb05
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rs 434 065
Abstract: 434 diode
Text: SIEMENS BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Pin Configuration Package < Q62702-B631 II CM Ordering Code S3 I! Marking BBY 51 < Type
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Q62702-B631
OT-23
rs 434 065
434 diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 521 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=1kii, R2=1kii Type Q62702-C2355 1= B II Pin Configuration Package LU XVs Ordering Code CM BCR 521 Marking 3=C SOT-23
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Q62702-C2355
OT-23
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TRANSISTOR b 772 p
Abstract: No abstract text available
Text: SIEMENS BCR 503 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drive circuit » Built in bias resistor R1=2.2kiî, R2=2.2k£î XAs Q62702-C2370 1= B Package II CO BCR 503 Pin Configuration O Marking Ordering Code LU II CM
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Q62702-C2370
OT-23
300ns;
TRANSISTOR b 772 p
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Abstract: No abstract text available
Text: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C
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BFS17P
Q62702-F940
OT-23
0535b05
fi235b05
500MHz
flE35b05
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marking code CM
Abstract: No abstract text available
Text: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 S e m ic o n d u c to r Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.
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CMPS5061
CMPS5062
CMPS5063
CMPS5064
marking code CM
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Untitled
Abstract: No abstract text available
Text: • bbsa^si 0 0 5 4 m ? 40a hapx N AMER PHILIPS/DISCRETE BB804 b?E » VHF VARIABLE CAPACITANCE DOUBLE DIODE The BB804 is a variable capacitance double diode in planar technology with common cathode in a plastic SOT23 envelope. It is intended for FM tuning especially for car radios.
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BB804
BB804
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