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    MARKING CL SOT363 Search Results

    MARKING CL SOT363 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    MARKING CL SOT363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lr1551

    Abstract: SOT363-6 003 SOT363 SOT363 6
    Text: Leshan Radio Co ., Ltd 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 LR1551 Description Features Wide Power Supply Range: 1.8V to 5.5V The LR1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an


    Original     		PDF OT363 LR1551 LR1551 300MHz 10MHz 300MHz OT363-6) OT363-6 650TYP 525REF SOT363-6 003 SOT363 SOT363 6

    SOT363-6

    Abstract: BL1551 SOT363 6 003 SOT363 marking CL SOT363 sot363-6 marking SOT-363-6
    Text: BL1551—Single SPDT Analog Switch 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 Description Features Wide Power Supply Range: 1.8V to 5.5V The BL1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an


    Original     		PDF BL1551--Single OT363 BL1551 300MHz 10MHz 300MHz OT363-6) OT363-6 650TYP SOT363-6 SOT363 6 003 SOT363 marking CL SOT363 sot363-6 marking SOT-363-6

    74LVC2G06DW-7

    Abstract: No abstract text available
    Text: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V


    Original     		PDF 74LVC2G06 74LVC2G06 OT363 OT26/363 DS35161 74LVC2G06DW-7

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Planar Die Construction   Ideal for Medium Power Amplification and Switching  Case Material: Molded Plastic, “Green” Molding Compound,  Ultra-Small Surface Mount Package


    Original     		PDF MMDT3904 OT363 J-STD-020 AEC-Q101 MIL-STD202, DS30088

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020


    Original     		PDF MMDT3904 OT363 J-STD-020 MIL-STD202, AEC-Q101 DS30088

    Untitled

    Abstract: No abstract text available
    Text: D5V0F4U6S 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • IEC 61000-4-2 ESD : Air ±15kV, Contact ±8kV   4 Channels of ESD Protection   Low Channel Input Capacitance of 0.5pF Typical  Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL


    Original     		PDF OT363 IEEE1394, J-STD-020 DS35495

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF 2N7002DWA OT363 AEC-Q101 DS36120

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the


    Original     		PDF 2N7002DWA OT363 170mA 200mA AEC-Q101 DS36120

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original     		PDF 2N7002DWA OT363 170mA 200mA AEC-Q101 DS36120

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original     		PDF 2N7002DWA OT363 AEC-Q101 DS36120

    Untitled

    Abstract: No abstract text available
    Text: MMBD4148TW / BAS16TW SURFACE MOUNT FAST SWITCHING DIODE ARRAY Features Mechanical Data • Fast Switching Speed • • Ultra-Small Surface Mount Package • • For General Purpose Switching Applications Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.


    Original     		PDF MMBD4148TW BAS16TW OT363 J-STD-020D MIL-STD-202, DS30154

    Untitled

    Abstract: No abstract text available
    Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN66D0LDW OT363 AEC-Q101 DS31232

    Untitled

    Abstract: No abstract text available
    Text: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package   Epitaxial Planar Die Construction   Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


    Original     		PDF MMDT2907A OT363 J-STD-020 AEC-Q101 MIL-STD202, DS30109

    Untitled

    Abstract: No abstract text available
    Text: DMMT3906W 40V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > -40V • • IC = -200mA High Collector Current • • • Pair of PNP Transistors That Are Intrinsically Matched Note 1 2% Matching on Current Gain (hFE)


    Original     		PDF DMMT3906W OT363 -200mA J-STD-020 MIL-STD-202, DS30312

    BD5 diode

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


    Original     		PDF L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV BD5 diode

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


    Original     		PDF L02ESD5V0D6-5 L02ESD5V0D6-5 OT363 OT363 100mV

    Untitled

    Abstract: No abstract text available
    Text: DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • BVceo > 40V IC = 200mA high Collector Current • • • Pair of NPN transistors that are intrinsically matched Note 1 2% Matching on Current Gain (hFE) •


    Original     		PDF DMMT3904W OT363 200mA J-STD-020 MIL-STD-202, DS30311

    Untitled

    Abstract: No abstract text available
    Text: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.


    Original     		PDF DSS8110Y OT363 J-STD-020 200mV DSS9110Y) MIL-STD-202, DS31679

    BC847PN

    Abstract: No abstract text available
    Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363


    Original     		PDF BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847PN

    BC847B

    Abstract: No abstract text available
    Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363


    Original     		PDF BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847B

    aurix

    Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
    Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by


    Original     		PDF ESD3V3U1U-02LS ESD3V3U1U-02LRH AN210: AN140: 726-ESD3V3U1U02LRHE6 ESD3V3U1U-02LRH E6327 aurix XPOSYS teaklite

    Untitled

    Abstract: No abstract text available
    Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by


    Original     		PDF ESD3V3U1U-02LS ESD3V3U1U-02LRH AN210: AN140:

    L02ESD5V0D6-5

    Abstract: 15KV diode sot363
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE- 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES


    Original     		PDF L02ESD5V0D6-5 OT363 L02ESD5V0D6-5 OT363 15KV diode sot363

    digital transistor array

    Abstract: marking 702 sot363
    Text: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF OT-363 digital transistor array marking 702 sot363