Untitled
Abstract: No abstract text available
Text: FS01.A/B SENSITIVE GATE SCR TO92 Plastic RD26 (Plastic) On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V K G A A FS01.A G K FS01.B This series of Silicon Controlled Rectifiers uses a high performance PNPN technology.
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Untitled
Abstract: No abstract text available
Text: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G Low current SCR Low thermal resistance
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FS01xxxA)
OT-223
FS01xxxN)
OT23-3L
2011/65/EU
2002/96/EC
J-STD-020,
FS01xxxL)
OT-223
/SOT23-3L)
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Untitled
Abstract: No abstract text available
Text: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G Low current SCR Low thermal resistance
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FS01xxxA)
OT-223
FS01xxxN)
OT23-3L
2011/65/EU
2002/96/EC
J-STD-020,
FS01xxxL)
OT-223
/SOT23-3L)
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BF1108_BF1108R
Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Text: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
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BF1108;
BF1108R
OT143B
BF1108)
OT143R
BF1108R)
BF1108
BF1108R
BF1108_BF1108R
BF1108_1108R_3
MARKING CODE CGK
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scr to92
Abstract: No abstract text available
Text: FS01.A/B SENSITIVE GATE SCR TO92 Plastic RD26 (Plastic) On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V K G A A FS01.A G K FS01.B This series of Silicon Controlled Rectifiers uses a high performance PNPN technology.
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Untitled
Abstract: No abstract text available
Text: FS02.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V K G A FS02.A This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose
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scr to92
Abstract: No abstract text available
Text: FS02.A/B SENSITIVE GATE SCR TO92 Plastic RD26 (Plastic) On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V K G A A FS02.A G K FS02.B This series of Silicon Controlled Rectifiers uses a high performance PNPN technology.
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Untitled
Abstract: No abstract text available
Text: FS01.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V to 800 V K GA This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. FS01.A This part is intended for general purpose
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Untitled
Abstract: No abstract text available
Text: FS01.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V K G A FS01.A This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose
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power scr
Abstract: No abstract text available
Text: FS02.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V K G A FS02.A This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose
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power scr
Abstract: No abstract text available
Text: FS01.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V K GA This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. FS01.A This part is intended for general purpose
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Untitled
Abstract: No abstract text available
Text: FS02.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V K G A FS02.A This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose
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Untitled
Abstract: No abstract text available
Text: FS02.A SENSITIVE GATE SCR TO92 Plastic On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage K G 200 V ÷ 800 V A FS02.A This series of Silicon Controlled Rectifiers uses a high performance PNPN technology. This part is intended for general purpose
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BUK 155
Abstract: 470 CFK BPM T 105 94V-0 MARKING CFK SMA33CA marking cvk Marking code AHm marking code CVK rkm 22 SMA17
Text: SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS REVERSE VOLTAGE FORWARD CURRENT FEATURES - 6.8 to 200 VOLTS - 400 Amperes SMA Rating to 200V VBR For surface mounted applications Reiiable low cost construction utilizing molded plastic technique
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BUK 155
Abstract: BYM 268 470 CFK byk 306 SMA33CA BPM T 105 94V-0 MARKING CMK LS BMK SMA12CA bhk 115
Text: SURF ACE MOUNT UNIDIREC TIONAL AND BIDIRECT IONAL TRANSIE NT V OLTA GE S UPPRESS ORS REVERSE VOLTAGE - 6.8 to 200 VOLTS FORWARD CURRENT - 400 Amperes FEATURES Rating to 200V VBR For surface mou nted applications Reiiable low cost construction utilizing molded plastic te chnique
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MARKING CODE CGK
Abstract: No abstract text available
Text: SN74LVC1G32 www.ti.com SCES219Q – APRIL 1999 – REVISED JANUARY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation
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SN74LVC1G32
SCES219Q
24-mA
MARKING CODE CGK
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C32F
Abstract: marking C32R C32K marking code C32f MARKING CODE CGK CG5 marking C325 marking CGK sn74lvc1g32dry2 SCES219R
Text: SN74LVC1G32 www.ti.com SCES219R – APRIL 1999 – REVISED JUNE 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation
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SN74LVC1G32
SCES219R
24-mA
000-V
A114-A)
A115-A)
C32F
marking C32R
C32K
marking code C32f
MARKING CODE CGK
CG5 marking
C325
marking CGK
sn74lvc1g32dry2
SCES219R
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GK SOT23
Abstract: P0102BL P0102AL 5AA4 p0102b P0102BL 5AA4 P0102AL P0109AL 1CGK
Text: P01xxxL 0.25A SCRS SENSITIVE Table 1: Main Features A Symbol Value Unit IT RMS 0.25 A VDRM/VRRM 100 and 200 V IGT 1 and 200 µA G K A G DESCRIPTION Thanks to highly sensitive triggering levels, the P01xxxL SCR series is suitable for all applications where the available gate current is limited such as
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P01xxxL
P01xxxL
OT23-3L,
OT23-3L
P0102AL
P0102BL
P0109AL
GK SOT23
P0102AL 5AA4
p0102b
P0102BL 5AA4
1CGK
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BF1118
Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
BF1118
BF1118R
DIODE marking S4 06
MARKING CODE CGK
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BF1118
Abstract: MARKING CODE CGK
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
BF1118
MARKING CODE CGK
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Untitled
Abstract: No abstract text available
Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 2 — 11 January 2012 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
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BF1118;
BF1118R;
BF1118W;
BF1118WR
BF1118,
BF1118R,
BF1118W
BF1118WR
OT143B,
OT143R,
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Abstract: No abstract text available
Text: SN74LVC1G32 www.ti.com SCES219S – APRIL 1999 – REVISED JULY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES DESCRIPTION • This single 2-input positive-OR gate is designed for 1.65-V to 5.5-V VCC operation. 1 2 • • •
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SN74LVC1G32
SCES219S
24-mA
000-V
A114-A)
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G32 www.ti.com SCES219S – APRIL 1999 – REVISED JULY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES DESCRIPTION • This single 2-input positive-OR gate is designed for 1.65-V to 5.5-V VCC operation. 1 2 • • •
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SN74LVC1G32
SCES219S
24-mA
000-V
A114-A)
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G32 www.ti.com SCES219S – APRIL 1999 – REVISED JULY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES DESCRIPTION • This single 2-input positive-OR gate is designed for 1.65-V to 5.5-V VCC operation. 1 2 • • •
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SN74LVC1G32
SCES219S
24-mA
000-V
A114-A)
A115-A)
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