Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING C6 SOT23 Search Results

    MARKING C6 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING C6 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DSC2G03 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: C6  Packaging DSC2G03x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)


    Original     		PDF DSC2G03 UL-94 DSC2G03Ã

    KV1410

    Abstract: No abstract text available
    Text: KV1410 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 2.00 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel


    Original     		PDF KV1410 OT23-3) KV1410 OT23-3 IC-xxx-KV1471E 0798O0

    C3 DIODE

    Abstract: C3 SOT23-3 KV1400
    Text: KV1400 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 2.10 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel


    Original     		PDF KV1400 OT23-3) KV1400 OT23-3 IC-xxx-KV1471E 0798O0 C3 DIODE C3 SOT23-3

    CV 203

    Abstract: marking code C9 F3 SOT23-3
    Text: KV1430 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel


    Original     		PDF KV1430 OT23-3) KV1430 OT2375 IC-xxx-KV1471E 0798O0 CV 203 marking code C9 F3 SOT23-3

    marking code C9

    Abstract: CV 203 KV1450
    Text: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)


    Original     		PDF KV1450 OT23-3) KV1450 KV450 miniatu28-2375 IC-xxx-KV1471E 0798O0 marking code C9 CV 203

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.


    Original     		PDF AIC1896 AIC1896 200mA

    KV1450

    Abstract: F5 MARK
    Text: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)


    Original     		PDF KV1450 OT23-3) KV1450 KV450 miniatu28-2375 IC-xxx-KV1450 0300O0 F5 MARK

    marking L2 SOT23 6

    Abstract: RF1 SOT-23 MARKING C6 SOT23 SMP1345-079LF SK4025 C7L3 Marking C6 SOT23-5 MARKING 518
    Text: DATA SHEET SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes Features Designed for high-isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C per


    Original     		PDF SMP1345 J-STD-020 OT-23 marking L2 SOT23 6 RF1 SOT-23 MARKING C6 SOT23 SMP1345-079LF SK4025 C7L3 Marking C6 SOT23-5 MARKING 518

    CL01 DIODE

    Abstract: No abstract text available
    Text: ETR0329-002 •GENERAL DESCRIPTION XC6218 series are highly precise, low noise, positive voltage LDO regulators manufactured using CMOS processes. The series achieves very low supply current, 1.0 A TYP. and consists of a reference voltage source, an error amplifier,


    Original     		PDF ETR0329-002 XC6218 SSOT-24 100mV CL01 DIODE

    marking W26 sot23

    Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
    Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters


    Original     		PDF OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89

    MRF18060A

    Abstract: smd transistor marking z3 archive smd transistor marking j2 smd transistor marking z1
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060A-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A--1 MRF18060ALSR3 MRF18060A--1 MRF18060A smd transistor marking z3 archive smd transistor marking j2 smd transistor marking z1

    TLX8-0300

    Abstract: transistor J585
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3 TLX8-0300 transistor J585

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3

    si3054

    Abstract: Si3052 Si3019 Application Note MIL-C-8 rj11 pcb mount ON MARKING R59 sot89 RJ11 4/4 connector RJ11 diagram Si3019 AN67
    Text: AN67 Si3050/52/54/56 L A Y O U T G U I D E L I N E S Description The Si305x chipsets improve upon Silicon Laboratories’ groundbreaking family of silicon direct access arrangement DAA products by providing the highest integration, lowest cost, and smallest area DAA solution


    Original     		PDF Si3050/52/54/56 Si305x Si305x, si3054 Si3052 Si3019 Application Note MIL-C-8 rj11 pcb mount ON MARKING R59 sot89 RJ11 4/4 connector RJ11 diagram Si3019 AN67

    KV1735STL-G

    Abstract: KV1735RTL-G KV1735
    Text: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve


    Original     		PDF KV1735 100MHz 50MHz 70MHz KV1735STL-G KV1735RTL-G KV1735

    KV1735STL-G

    Abstract: top marking 7485
    Text: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve


    Original     		PDF KV1735 KV1735 100MHz measure14 70MHz 50MHz 100MHz KV1735STL-G top marking 7485

    Untitled

    Abstract: No abstract text available
    Text: TKV1750A 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve


    Original     		PDF TKV1750A 100MHz

    transistor 131

    Abstract: MRF18060ALR3 transistor Z6 MRF18060A
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A MRF18060ALR3 MRF18060ALSR3 transistor 131 transistor Z6

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


    Original     		PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    diode RU3

    Abstract: SMP1345 SMP1345-003 SMP1345-004 SMP1345-005 SMP1345-518 marking c7 sot-23 SK402
    Text: DATA SHEET SMP1345 Series: Very Low Capacitance Plastic Packaged Silicon PIN Diodes Features Designed for high isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free MSL-1 @ 250 °C per JEDEC J-STD-020


    Original     		PDF SMP1345 J-STD-020 diode RU3 SMP1345-003 SMP1345-004 SMP1345-005 SMP1345-518 marking c7 sot-23 SK402

    NIPPON CAPACITORS

    Abstract: Transistor J438 CRCW08051001FKEA MRF21010
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010

    CRCW08051001FKEA

    Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
    Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010--2 MRF21010LSR1 CRCW08051001FKEA TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010