Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING C3J Search Results

    MARKING C3J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING C3J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking code C3J

    Abstract: C3j marking c30 C3J code C3J marking c3j CMLDM7003 CMLDM7003J sot transistor pinout
    Text: CMLDM7003 CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE • ESD protected up to 2kV MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current


    Original     		CMLDM7003 CMLDM7003J CMLDM7003: CMLDM7003J: OT-563 17-October marking code C3J C3j marking c30 C3J code C3J marking c3j sot transistor pinout PDF

    CMLDM7003

    Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
    Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


    Original     		CMLDM7003 CMLDM7003G* CMLDM7003J OT-563 CMLDM7003 CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G PDF

    C3j marking

    Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
    Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: 26-June C3j marking code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current


    Original     		CMLDM7003 CMLDM7003G* CMLDM7003J OT-563 CMLDM7003 28-January PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7003 CMLDM7003G* CMLDM7003J w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage


    Original     		CMLDM7003 CMLDM7003G* CMLDM7003J OT-563 CMLDM7003 18-January PDF

    CMLDM7003

    Abstract: C3j marking CMLDM7003J code c3j marking c3j c30 C3J marking code C3J CMLDM7003G
    Text: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current


    Original     		CMLDM7003 CMLDM7003G* CMLDM7003J OT-563 CMLDM7003 18-January C3j marking CMLDM7003J code c3j marking c3j c30 C3J marking code C3J CMLDM7003G PDF

    code C3J

    Abstract: marking code C3J marking c3j marking code 8hs
    Text: LH53B8600D 8M Mask ROM Model No.: LHMB86xx Spec No.: EL099183 Issue Date: November 6, 1997 LH53B8600D •Handle this docuaent carefully for it contains Material protected by international copyright la». Any reproduction, full or in part, of this material is prohibited


    OCR Scan     		LH53B8600D LHMB86xx) EL099183 34TYR 25-tO DIP42-P-600 CV651 code C3J marking code C3J marking c3j marking code 8hs PDF

    marking SAIo

    Abstract: in snec 0IKE 08x4 RK09K RK09K1110 code C3J marking code C3J marking c3j
    Text: No. KX-97-T793 Cus t ome r• Date: Feb. 19. 1997 Att.t»nt. i on : Your ref. No : Your Part. No :29 SPEC IFI CATIONS ALPS'; 29 0007 MODEL Snec. No. Sample RECEIPT : No. : W1 01 1 758M STATUS RECEIVED By. Date Si Enature Name Title ALPS.ELECTRIC CO., LTD.


    Original     		KX-97-T793 KX-97-1793 RK09K1110 POIM10MBIERS. W1011758M K091B0Z91 96-09-i3 WI0II758M 91BOZ91 marking SAIo in snec 0IKE 08x4 RK09K RK09K1110 code C3J marking code C3J marking c3j PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    code c3j

    Abstract: C3j marking marking code C3J marking c3j
    Text: For technical assistance call the Strategic Products number on the back cover. Featu res A p p lica tio n s • Recommended fo r reflow processing ■ Rotor design compatible with pick and place and automatic adjustment equipment ■ Supplied in 8mm embossed tape, compat­


    OCR Scan     		lSSbS73 code c3j C3j marking marking code C3J marking c3j PDF

    PC3223TB

    Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.


    Original     		UPC3223TB PC3223TB HS350 WS260 IR260 PU10491EJ01V0DS marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB PDF

    Transistor Marking C3

    Abstract: PC2710TB UPC3223TB PC3223TB marking c3j HS350 PC2708TB marking c1d PC3223TB-E3 PC3223TB-E3-A
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.


    Original     		UPC3223TB PC3223TB Transistor Marking C3 PC2710TB UPC3223TB marking c3j HS350 PC2708TB marking c1d PC3223TB-E3 PC3223TB-E3-A PDF

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		PC3232TB PC3232TB IR260 WS260 HS350 PU10597EJ01V0DS PDF

    marking code C1F mmic

    Abstract: marking code C1d mmic
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3225TB is a silicon germanium SiGe monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		UPC3225TB PC3225TB 95GHz IR260 WS260 HS350 PU10500EJ01V0DS marking code C1F mmic marking code C1d mmic PDF

    MARKING BS

    Abstract: C3j marking TIC 1.0M marking c3j TA4100F
    Text: TO SHIBA TA4100F Bipolar Linear Integrated Circuit Unit in mm UHF VHF RF, Mix Application u - a î Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC ♦ 0.2 1.5 - 0.1 SYM BOL RATING UNIT C ollector-Base Voltage ^CBO 10 V C ollector-E m itter Voltage VcEO


    OCR Scan     		TA4100F OSI111 MARKING BS C3j marking TIC 1.0M marking c3j TA4100F PDF

    PC3225

    Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PC3236TK PC3236TK HS350 WS260 IR260 PU10734EJ01V0DS PC3225 transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j PDF

    Untitled

    Abstract: No abstract text available
    Text: c ta n k e 0 1 :57:13 2 0 1 2 / 07/21 APPLICA 3LE STANDARD O PER ATING STO RAG E -55 TEM PER ATU R E RANGE °C TO +85 °C O PER ATIN G RATING VOLTAGE 300 V AC 2A °C TO +60 °C H U M IDITY 85% MAX RANGE S TO RAG E CURRENT -10 TE M PE R ATU R E RANGE H U M IDITY


    OCR Scan     		MIL-STD-1344. ELC4-019112-02 PCN10-128S-2. 54DSA HD0011-2-1 L583-0089-2-77 HC0011- PDF

    C3j marking

    Abstract: DTC123J marking c3j
    Text: UTC DTC123J NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR BUILT-IN RESISTORS FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with


    Original     		DTC123J OT-523 QW-R221-006 C3j marking DTC123J marking c3j PDF

    transistor marking c3n

    Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		UPC3226TB PC3226TB transistor marking c3n PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j PDF

    uPC3223TB

    Abstract: HS350 PC2710TB C3j marking marking c3j marking c1d PU10491EJ01V0DS
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.


    Original     		PC3223TB PC3223TB 50conductor uPC3223TB HS350 PC2710TB C3j marking marking c3j marking c1d PU10491EJ01V0DS PDF

    DF40

    Abstract: 60DS-0
    Text: c a r o l. tr ib b le 0 2 :30:40 2009/ 10/23 A P P L IC A 3LE S T A N D A R D OPERATING TEMPERATURE RANGE RATING STORAGE TEMPERATURE RANGE APPLICABLE CONNECTOR -35°C TO 85°C NOTE 1 VOLTAGE 30V AC CURRENT 0. 3A notice to change without is subject FOR REFERENCE:This


    OCR Scan     		-60DP-0. CL684-4085-8-51 DF40HCC2 0806CPACKING CL684-4085-8-51 DF40HCC2. -60DS-0. 4VC51> DF40HC DF40 60DS-0 PDF

    PC2710TB

    Abstract: transistor marking c3n C3J marking UPC3226 marking c1d UPC3223TB marking c3j
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		PC3226TB PC3226TB PC2710TB transistor marking c3n C3J marking UPC3226 marking c1d UPC3223TB marking c3j PDF