Untitled
Abstract: No abstract text available
Text: Data Sheet Rev. 1.1 30.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: 200Pin SO-DIMM • SEN02G64T1BJ2WI-25R 2GB PC2-6400 in COB Technology RoHS compliant • Options: DataRate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 Marking -25 -30 Module density
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200Pin
SEN02G64T1BJ2WI-25R
PC2-6400
2048MB
200-pin
64-bit
CH-9552
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MARKING c1y
Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART
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UPC2708T
UPC8106T
UPC2747T
UPC2709T
UPC8108T
UPC2748T
UPC2710T
UPC8109T
UPC2749T
UPC2711T
MARKING c1y
MARKING C2K
marking C2H
marking c1h
marking C1s
marking c1e
c2a marking
marking C1P
UPG152TA
C1H MARKING
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C2D05120
Abstract: High Voltage Multipliers TO-252-2 C2D05120E
Text: C2D05120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior
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C2D05120E
1200-Volt
O-252-2
C2D05120
High Voltage Multipliers
TO-252-2
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C2D20120
Abstract: D20120 C2D20120D
Text: C2D20120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D20120
1200-Volt
O-247-3
C2D20120D
D20120
C2D20120D
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D 16027 G
Abstract: C2D10120 C2D10120D CSD10120
Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D10120D
1200-Volt
O-247-3
C2D10120D
C2D10he
D 16027 G
C2D10120
CSD10120
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C2D05120E
Abstract: C2D05120 cree marking information
Text: C2D05120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior
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C2D05120E
1200-Volt
O-252-2
C2D05120
cree marking information
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C2D10120D
Abstract: C2D10120 BB 313 TO247-3
Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D10120D
1200-Volt
O-247-3
C2D10120D
C2D10120
BB 313
TO247-3
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Untitled
Abstract: No abstract text available
Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D10120Dâ
1200-Volt
O-247-3
C2D10120D
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Untitled
Abstract: No abstract text available
Text: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D20120Dâ
1200-Volt
O-247-3
C2D20120D
C2D20120D
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C2D20120D
Abstract: BB 313 C2D20120 14148 TO247-3
Text: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D20120D
1200-Volt
O-247-3
C2D20120D
BB 313
C2D20120
14148
TO247-3
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Untitled
Abstract: No abstract text available
Text: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D20120Dâ
1200-Volt
O-247-3
C2D20120D
C2D20120D
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C2D05120
Abstract: C2D05120A
Text: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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PDF
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C2D05120
1200-Volt
O-220-2
C2D05120A
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Untitled
Abstract: No abstract text available
Text: C2D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D10120Dâ
1200-Volt
O-247-3
C2D10120D
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C2D10120A
Abstract: C2D10120
Text: C2D10120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D10120
1200-Volt
O-220-2
C2D10120A
C2D10120A
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Untitled
Abstract: No abstract text available
Text: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D20120Dâ
1200-Volt
O-247-3
C2D20120D
C2D20120D
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Untitled
Abstract: No abstract text available
Text: C2D20120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 20 A Qc =122 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D20120D
1200-Volt
O-247-3
C2D20120D
C2D20120
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C2D20120D
Abstract: No abstract text available
Text: C2D20120D VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 29 A* Rectifier Features 1200 V Qc = 122 nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation
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C2D20120D
O-247-3
C2D20120D
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C2D10120
Abstract: C2D10120A IN223
Text: C2D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D10120A
1200-Volt
O-220-2
C2D10120
IN223
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C2D05120
Abstract: ua 8560 1200-VOLT C2D05120A defibrillator High Voltage Multipliers
Text: C2D05120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D05120A
1200-Volt
O-220-2
C2D05120
ua 8560
defibrillator
High Voltage Multipliers
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Untitled
Abstract: No abstract text available
Text: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior
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C2D05120â
1200-Volt
O-220-2
C2D05120
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C2D10120D
Abstract: No abstract text available
Text: C2D10120D VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 18 A* Rectifier Features 1200 V Qc = 56 nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
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C2D10120D
O-247-3
C2D10120D
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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OCR Scan
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PDF
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CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
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SMD Code 12W SOT-23
Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED
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OCR Scan
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PDF
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OT-23
350mW
CMPT2222A
CMPT2369
CMPT24
CMPT2907A
CMPT3640
CMPT3646
CMFT3904
CMPT3906
SMD Code 12W SOT-23
CXT5401 BK
SMD MARKING CODE 4E
C2TA44
SMD MARKING CODE FE sot89
marking code C3E SOT-89
npn smd bc550 smd
SMD Code 12W SOT23
marking BH SOT-223
marking da sot89
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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OCR Scan
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PDF
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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