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    MARKING C2 MOS Search Results

    MARKING C2 MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING C2 MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CAT3636 6-Channel Fractional LED Driver in TQFN 3x3 Description http://onsemi.com TQFN−16 HV3 SUFFIX CASE 510AD LEDC2 NC C1− LEDB1 C1+ VIN C2+ LEDB2 VOUT LEDC1 Top View MARKING DIAGRAMS JAAA AXXX YWW JAAR AXXX YWW JAAA = CAT3636HV3−T2 JAAR = CAT3636HV3−GT2


    Original     		PDF CAT3636 510AD CAT3636HV3â CAT3636/D

    Untitled

    Abstract: No abstract text available
    Text: DB2S308 Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features  Low forward voltage VF  Short reverse recovery time trr  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: C2


    Original     		PDF DB2S308 UL-94 DB2S30800L

    C2 marking code

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-21090--Rev. 01-Jun-02 C2 marking code

    Untitled

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-03082--Rev. 12-Feb-01

    Untitled

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-02538--Rev. 20-Nov-00

    FDP075N15

    Abstract: FDP075N15A FDB075N15A
    Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS on = 6.25 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has


    Original     		PDF FDP075N15A F102/FDB075N15A FDB075N15A FDB075N15A FDP075N15

    Untitled

    Abstract: No abstract text available
    Text: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQA44N30

    Untitled

    Abstract: No abstract text available
    Text: FSB50550A, FSB50550AT Motion SPM 5 Series Features General Description • 500 V RDS on = 1.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50550A and FSB50550AT are an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FR FET®) Technology as a Compact Inverter Solution for


    Original     		PDF FSB50550A, FSB50550AT FSB50550A FSB50550AT

    Untitled

    Abstract: No abstract text available
    Text: FSB50660SF, FSB50660SFT Motion SPM 5 SuperFET® Series Features General Description • UL Certified No. E209204 FSB50660SF and FSB50660SFT are a Motion SPM® 5 SuperFET® Series Based on Super Junction MOSFET SuperFET Technology as a Compact Inverter Solution


    Original     		PDF FSB50660SF, FSB50660SFT E209204 FSB50660SF FSB50660SFT

    FSB50325

    Abstract: No abstract text available
    Text: FSB50325A, FSB50325AT Motion SPM 5 Series Features General Description • 250 V RDS on = 1.7 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50325A and FSB50325AT are an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FR FET®) Technology as a Compact Inverter Solution for


    Original     		PDF FSB50325A, FSB50325AT FSB50325A FSB50325AT FSB50325

    Untitled

    Abstract: No abstract text available
    Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF 2N7002VC/VAC AEC-Q101 OT563 J-STD-020 MIL-STD-202, DS30639

    Untitled

    Abstract: No abstract text available
    Text: FSB50250AS Motion SPM 5 Series Features General Description • 500 V RDS on = 3.8 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50250AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


    Original     		PDF FSB50250AS FSB50250AS

    Untitled

    Abstract: No abstract text available
    Text: FSB50450A Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450A is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


    Original     		PDF FSB50450A FSB50450A

    Untitled

    Abstract: No abstract text available
    Text: FSB50760SF, FSB50760SFT Motion SPM 5 SuperFET® Series Features General Description • UL Certified No. E209204 FSB50760SF and FSB50760SFT are a Motion SPM® 5 SuperFET® Series Based on Super Junction MOSFET SuperFET Technology as a Compact Inverter Solution


    Original     		PDF FSB50760SF, FSB50760SFT E209204 FSB50760SF FSB50760SFT

    Untitled

    Abstract: No abstract text available
    Text: FSB50550AS Motion SPM 5 Series Features General Description • 500 V RDS on = 1.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50550AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


    Original     		PDF FSB50550AS FSB50550AS

    diodes code va

    Abstract: VA MARKING
    Text: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF 2N7002VC/VAC 2N7002V/VA AEC-Q101 OT-563 OT-563 J-STD-020D DS30448 diodes code va VA MARKING

    Untitled

    Abstract: No abstract text available
    Text: FSB50450AS Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


    Original     		PDF FSB50450AS FSB50450AS

    FSB50825A

    Abstract: No abstract text available
    Text: FSB50825AS Motion SPM 5 Series Features General Description • 250 V RDS on = 0.45 Max FRFET MOSFET 3Phase Inverter Including HVICs FSB50825AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small


    Original     		PDF FSB50825AS FSB50825AS FSB50825A

    FCP380N60E

    Abstract: No abstract text available
    Text: SupreFET II FCP380N60E / FCPF380N60E 600V N-Channel MOSFET Features Description ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower


    Original     		PDF FCP380N60E FCPF380N60E

    Untitled

    Abstract: No abstract text available
    Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF 2N7002VC/VAC AEC-Q101 OT563 J-STD-020 DS30639

    TG2202F

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) v C2 out MARKING gnd Type name


    OCR Scan     		PDF TG2202F 961001EBC1 907GHz TG2202F

    TG2202F

    Abstract: No abstract text available
    Text: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING


    OCR Scan     		PDF TG2202F 961001EAC1 TG2202F

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING


    OCR Scan     		PDF TG2202F 0910EBC1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT T r i ? ? n ? GaAs MONOLITHIC F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING


    OCR Scan     		PDF TG2202F