Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING C GAAS FET Search Results

    MARKING C GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DC092A-B Analog Devices LTC1551: -4.1V OUTPUT GaAs FET Visit Analog Devices Buy
    DC092A-A Analog Devices LTC1550LCS8 - -4.1V OUTPUT GaA Visit Analog Devices Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy

    MARKING C GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original
    PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    marking code C1d SMD

    Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
    Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    Original
    PDF 503/BGV P-TSSOP-10-1 GPS09184 marking code C1d SMD smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503

    marking code C1d SMD

    Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
    Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    Original
    PDF 503/BGV P-TSSOP-10-1 GPS09184 marking code C1d SMD smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr

    Untitled

    Abstract: No abstract text available
    Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    Original
    PDF 503/BGV P-TSSOP-10-2 GPS09230

    XMFP1-M3

    Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••


    Original
    PDF Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428

    gaas fet marking B

    Abstract: FET GAAS marking a PS720C
    Text: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1  LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS


    Original
    PDF PS720C-1A PS720C-1A gaas fet marking B FET GAAS marking a PS720C

    transistor smd CF rs

    Abstract: transistor smd marking mx transistor smd cf CF 750
    Text: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V


    Original
    PDF OT-143 Q62702-F1391 P-SOT143-4-1 EHT08531 GPS05559 transistor smd CF rs transistor smd marking mx transistor smd cf CF 750

    transistor smd CF rs

    Abstract: transistor smd marking mx smd marking CF marking K gaas fet gaas fet marking B FET GAAS marking a MARKING CF smd marking cf rl MMIC marking CODE cf RF smd code SOT143 Package
    Text: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V


    Original
    PDF OT-143 Q62702-F1391 P-SOT143-4-1 EHT08531 GPS05559 transistor smd CF rs transistor smd marking mx smd marking CF marking K gaas fet gaas fet marking B FET GAAS marking a MARKING CF smd marking cf rl MMIC marking CODE cf RF smd code SOT143 Package

    date code marking NEC

    Abstract: code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a NEC PART NUMBER MARKING gaas fet marking C P13560EJ2V0DS
    Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side


    Original
    PDF PS7200H-1A PS7200H-1A date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a NEC PART NUMBER MARKING gaas fet marking C P13560EJ2V0DS

    MARKING CF

    Abstract: siemens gaas fet siemens PG 750 Q62702-F1391 PG 750 8 PIN marking 340 mmic MMIC SOT 89 marking CODE MMIC marking CODE 06
    Text: CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment


    Original
    PDF Q62702-F1391 100pF MARKING CF siemens gaas fet siemens PG 750 Q62702-F1391 PG 750 8 PIN marking 340 mmic MMIC SOT 89 marking CODE MMIC marking CODE 06

    WL431003667

    Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original
    PDF OT-223 Q62702-L94 P-SOT223-4-2 GPS05560 WL431003667 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512

    cly 10

    Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original
    PDF Q62702-L94 OT-223 P-SOT223-4-2 GPS05560 cly 10 Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501

    transistor smd cf

    Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
    Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    Original
    PDF Q62702-F1215 OT-143 P-SOT143-4-1 EHT07329 GPS05559 transistor smd cf CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318

    FSC60ML

    Abstract: FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817
    Text: FSC60ML General Purpose GaAs FET FEATURES • Low Noise Figure: NF=0.8dB Typ. @ f=4GHz • High Associated Gain: Gas=11dB (Typ.) @ f=4GHz • Small Size: 6 pin Plastic Package for SMT Applications. DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate


    Original
    PDF FSC60ML FSC60ML FCSI0598M200 FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817

    HMC216MS8

    Abstract: h216
    Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB


    Original
    PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8 h216

    H216

    Abstract: HMC216MS8 gaas fet marking a marking c gaas fet 216MS8E HMC216MS8E
    Text: HMC216MS8 / 216MS8E v02.0705 7 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB


    Original
    PDF HMC216MS8 216MS8E HMC216MS8E HMC216MS8 H216 gaas fet marking a marking c gaas fet 216MS8E

    transistor smd 661 752

    Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original
    PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 transistor smd 661 752 GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking


    OCR Scan
    PDF

    gaas fet marking AR

    Abstract: No abstract text available
    Text: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    OCR Scan
    PDF 503/BGV 111111i gaas fet marking AR

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan
    PDF

    MMIC marking code R

    Abstract: cf rt marking code
    Text: Infineon ♦Bihncloçjiâï GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LIMA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current


    OCR Scan
    PDF Q62702-F1391 P-SOT143-4-1 MMIC marking code R cf rt marking code

    MMIC "SOT 89" marking

    Abstract: marking HLEH Siemens MMIC MMIC marking code GA
    Text: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure


    OCR Scan
    PDF VPS05178 Q62702-F1391 MMIC "SOT 89" marking marking HLEH Siemens MMIC MMIC marking code GA

    transistor marking YD ghz

    Abstract: EHT07317
    Text: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    OCR Scan
    PDF Q62702-F1215 P-SOT143-4-1 EHT07327 transistor marking YD ghz EHT07317

    MMIC marking CODE cf

    Abstract: ma com 4 pin mmic A7560
    Text: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V


    OCR Scan
    PDF VPS05178 Q62702-F1391 Rn/50Q MMIC marking CODE cf ma com 4 pin mmic A7560