transistor k74
Abstract: transistor SMD k74 smd TRANSISTOR code marking 7k transistor k74 smd lg dd SMD TRANSISTOR MARKING NK TRANSISTOR SMD MARKING CODE 8D N7 2C SMD Transistor transistor SMD MARKING CODE 772 smd transistor 7k
Text: IG N TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER P 40mW @5Msps, 150mW @ 50Msps P 2.5V supply voltage with 2.5V/3.3V compatiP P P P Temperature Range D Package Conditioning Marking TSA1201IF -40 C to +85 C TQFP48 Tray SA1201I TSA1201IFT -40 C to +85 C TQFP48
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12-BIT,
50MSPS,
150mW
150mW
50Msps
15MHz
TSA0801,
transistor k74
transistor SMD k74
smd TRANSISTOR code marking 7k
transistor k74 smd
lg dd
SMD TRANSISTOR MARKING NK
TRANSISTOR SMD MARKING CODE 8D
N7 2C SMD Transistor
transistor SMD MARKING CODE 772
smd transistor 7k
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TRANSISTOR BC 187
Abstract: PC99 RECS-80 W83697SF W83877TF ISO7816
Text: W83697SF WINBOND I/O W83697SF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 04/16/01 0.50 0.50 First published 2 111 04/27/01 0.51 0.51 Update the Top Marking 3 4 5 6 7 8 9 10 Please note that all data and specifications are subject to change without notice. All the
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W83697SF
W83697SF
TRANSISTOR BC 187
PC99
RECS-80
W83877TF
ISO7816
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Untitled
Abstract: No abstract text available
Text: W83697SF WINBOND I/O W83697SF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 04/16/01 0.50 0.50 First published 2 111 04/27/01 0.51 0.51 Update the Top Marking 3 4 5 6 7 8 9 10 Please note that all data and specifications are subject to change without notice. All the
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W83697SF
W83697SF
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powermosfet Gate Drive
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSF077N06NT3 G 1 Description OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together
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BSF077N06NT3
OptiMOSTM60V
powermosfet Gate Drive
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Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSF134N10NJ3 G Data Sheet 2.5, 2011-05-31 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSF134N10NJ3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSF134N10NJ3
OptiMOSTM100V
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Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSF134N10NJ3 G Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSF134N10NJ3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSF134N10NJ3
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Text: BSF035NE2LQ OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 3.5 mW ID 69 A Qoss 13 nC Qg(0V.10V) 19 nC
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BSF035NE2LQ
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Text: BSF035NE2LQ OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 3.5 mW ID 69 A Qoss 13 nC Qg(0V.10V) 19 nC
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BSF035NE2LQ
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BSF030ne2lq
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSF030NE2LQ Data Sheet 2.2, 2011-04-07 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSF030NE2LQ 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSF030NE2LQ
OptiMOSTM25V
BSF030ne2lq
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Abstract: No abstract text available
Text: BSF035NE2LQ OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Low parasitic inductance • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 3.5 mW ID 69 A Qoss 13 nC Qg(0V.10V) 19 nC
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BSF035NE2LQ
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Text: n-Channel Power MOSFET OptiMOS BSF030NE2LQ Data Sheet 2.3, 2011-09-19 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSF030NE2LQ 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSF030NE2LQ
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Text: n-Channel Power MOSFET OptiMOS BSF030NE2LQ Data Sheet 2.3, 2011-09-19 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSF030NE2LQ 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSF030NE2LQ
OptiMOSTM25V
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Text: BSF450NE7NH3 G OptiMOS 3 Power-MOSFET Product Summary Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 75 V RDS(on),max 45 mW ID 15 A • Superior thermal resistance CanPAK™ S MG-WDSON-2 • Dual sided cooling
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BSF450NE7NH3
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Untitled
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSF134N10NJ3 G Data Sheet 2.4, 2011-05-31 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSF134N10NJ3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSF134N10NJ3
OptiMOSTM100V
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Abstract: No abstract text available
Text: BSF450NE7NH3 G OptiMOS 3 Power-MOSFET Product Summary Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 75 V RDS(on),max 45 mW ID 15 A • Superior thermal resistance CanPAK™ S MG-WDSON-2 • Dual sided cooling
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BSF450NE7NH3
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Abstract: No abstract text available
Text: BSF083N03LQ G OptiMOS 2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 8.3 mΩ ID 53 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application
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BSF083N03LQ
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MG-WDSON-2
Abstract: BSF110N06NT3 BSF110N06NT3G A602
Text: BSF110N06NT3 G OptiMOS 3 Power-MOSFET Product Summary Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max 11 mW ID 47 A • Superior thermal resistance CanPAK™ S MG-WDSON-2 • Dual sided cooling
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BSF110N06NT3
10tain
MG-WDSON-2
BSF110N06NT3G
A602
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Abstract: No abstract text available
Text: BSF110N06NT3 G OptiMOS 3 Power-MOSFET Product Summary Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max 11 mW ID 47 A • Superior thermal resistance CanPAK™ S MG-WDSON-2 • Dual sided cooling
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Text: BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on VDS 30 V RDS(on),max 2.4 mW ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance
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BSF024N03LT3
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Untitled
Abstract: No abstract text available
Text: n-Channel Power MOSFET OptiMOS BSF024N03LT3 G Data Sheet 2.1, 2009-06-16 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSF024N03LT3 G 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSF024N03LT3
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Abstract: No abstract text available
Text: BSF053N03LT G OptiMOSTM2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS on ,max 5.3 mΩ ID 71 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application
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BSF053N03LT
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SL 100 NPN Transistor
Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures
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BFG590;
BFG590/X;
BFG590/XR
OT143
OT143R
BFG590
BFG590/X
BFG590/XR
BFG590
711DflSb
SL 100 NPN Transistor
n38 transistor
100 n38 transistor base pin
4 pin dual-emitter
SL 100 NPN Transistor base emitter collector
RF TRANSISTOR 2.5 GHZ s parameter
sot143r transistor
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blllSMT 000635^ 3T4 ■ URN PRELIMINARY piir~nnrr mh2D88C436 4 MEG x 36, 8 MEG x 18 IC DRAM CARD IC DRAM CARD 16 MEGABYTES 4 MEG x 36, 8 MEG x 18 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing
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88-Pin
MT12D88C436
16-megabyte
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ERA38
Abstract: No abstract text available
Text: ERA3 8 0.5A • Outline Drawing high v o l t a g e s u p e r high speed ■ Marking ■ Features • Super high speed switching • Ultra small package possible for 5mm pitch automatic insertion • Color code : White Lo w V f Voltoge class ° CD £ 4 S
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