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    MARKING BS MOSFET Search Results

    MARKING BS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MARKING BS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2369 equivalent

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


    Original     		PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) O276AA) 860pF IRF9130SMD05DGS 2N2369 equivalent

    diode bs 9300

    Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


    Original     		PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w

    FR9702

    Abstract: FR9702S6G FR9702S sot-23-6 step-down REGULATOR SOT23 marking t9g 5 pin sot marking 02A diode s1g sma Marking D2 SOT23-6 18a marking sot23 sot-23-6 Marking 017
    Text: FR9702 fitipower integrated technology lnc. 85T 23V, 1.8A, 1.4MHz Asynchronous Step-Down DC/DC Converter Description Features The FR9702 is a monolithic step-down switch mode converter with a built-in power MOSFET. It achieves 1.8A output current over a wide input


    Original     		PDF FR9702 FR9702 OT23-6, TSOT23-6, MSOP-10 FR9702-1 2-FEB-2012 FR9702S6G FR9702S sot-23-6 step-down REGULATOR SOT23 marking t9g 5 pin sot marking 02A diode s1g sma Marking D2 SOT23-6 18a marking sot23 sot-23-6 Marking 017

    FR9701

    Abstract: sot-23-6 step-down REGULATOR marking code t7G FR9701S6G mosfet "marking code 44" sot-23-6 FR9701S9G sot-23-6 marking sot-23-6 REGULATOR FR9701-1 step-down sot-23-6
    Text: FR9701 85T 23V, 2A, 600KHz Asynchronous Synchronous fitipower integrated technology lnc. Step-Down DC/DC Converter Description Features The FR9701 is a monolithic step-down switch mode converter with a built-in power MOSFET. It achieves 2A output current over a wide input supply


    Original     		PDF FR9701 600KHz TSOT-23-6 OT-23-6 MO-178-C. FR9701-1 1-FEB-2012 sot-23-6 step-down REGULATOR marking code t7G FR9701S6G mosfet "marking code 44" sot-23-6 FR9701S9G sot-23-6 marking sot-23-6 REGULATOR step-down sot-23-6

    Untitled

    Abstract: No abstract text available
    Text: G5172 Global Mixed-mode Technology High Efficiency, 4A Output, Synchronous Step Down Features „ „ „ „ „ „ „ „ „ „ „ General Description Two 30mΩ typical MOSFETs for high efficiency at 4A loads 200kHz to 2MHz Switching Frequency 0.8V ± 1% Voltage Reference Over Temperature


    Original     		PDF G5172 200kHz 16-pin G5172 G5174 TSSOP-14 470PF

    G5755

    Abstract: No abstract text available
    Text: G5755 Global Mixed-mode Technology 3A, 1.5MHz, 28V Step-down DC/DC Features General Description „ „ „ The G5755 is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 3A continuous output current over a wide input


    Original     		PDF G5755 G5755 100kHz 100nF 220pF

    Untitled

    Abstract: No abstract text available
    Text: G5796/G5796A G5797/G5797A Global Mixed-mode Technology 500kHz 2A/3A Synchronous Step-down DC/DC Features General Description „ „ „ The G5796/G5797 is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 2A/3A continuous output current over a wide


    Original     		PDF G5796/G5796A G5797/G5797A 500kHz G5796/G5797 F/35V

    G5752

    Abstract: No abstract text available
    Text: G5752/G5752A Global Mixed-mode Technology 2A Step-down DC/DC Features General Description „ „ „ The G5752/G5752A is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 2A continuous output current over a wide input


    Original     		PDF G5752/G5752A G5752/G5752A 380kHz G5752) G5752A) MSOP-10 operati10nF G5752A G5752

    IRF840

    Abstract: Application of irf840 datasheet irf840 mosfet datasheet mosfet irf840 st irf840 2c14 mosfet
    Text: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRF840 O-220 IRF840 Application of irf840 datasheet irf840 mosfet datasheet mosfet irf840 st irf840 2c14 mosfet

    Untitled

    Abstract: No abstract text available
    Text: G5753/G5753A Global Mixed-mode Technology 3A Step-down DC/DC Features General Description „ „ „ „ „ „ „ „ „ „ „ „ The G5753/G5753A is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 3A continuous output current over a wide input


    Original     		PDF G5753/G5753A G5753/G5753A 380kHz G5753) G5753A) MSOP-10 G5753A F/35V

    G5759

    Abstract: No abstract text available
    Text: G5759 Global Mixed-mode Technology 400kHz 4A Synchronous Step-down DC/DC Features General Description „ „ The G5759 is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 4A continuous output current over a wide input


    Original     		PDF G5759 400kHz G5759 F/35V

    0925K

    Abstract: marking BS mosfet
    Text: Advanced Power Electronics Corp. APE1581 3A, 23V, 350kHz SYNCHRONOUS RECTIFIED STEP-DOWN CONVERTER DESCRIPTION FEATURES The APE1581 is a monolithic synchronous buck regulator. The device integrates two 100mΩ MOSFETs, and provides 3A of continuous load current over a wide input


    Original     		PDF APE1581 350kHz APE1581 1581MP 0925K marking BS mosfet

    Untitled

    Abstract: No abstract text available
    Text: Global Mixed-mode Technology Inc. G5762/G5762A 2A Step-down DC/DC Features General Description „ „ „ The G5762 is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 2A continuous output current over a wide input


    Original     		PDF G5762/G5762A G5762 385kHz G5762) G5762A) G5762 F/35V G5762A

    Untitled

    Abstract: No abstract text available
    Text: Global Mixed-mode Technology Inc. G5754/G5754A 2A Step-down DC/DC Features General Description „ „ „ The G5754/G5754A is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 2A continuous output current over a wide input


    Original     		PDF G5754/G5754A G5754/G5754A 380kHz G5754) G5754A) G5754 G5754A

    power MOSFET IRF840

    Abstract: IRF840
    Text: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRF840 O-220 power MOSFET IRF840 IRF840

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance


    Original     		PDF PE84140 PE84140

    STSJ25NF3LL

    Abstract: No abstract text available
    Text: STSJ25NF3LL N-CHANNEL 30V - 0.0085 Ω - 25A PowerSO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STSJ25NF3LL • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.0105 Ω 25 A TYPICAL RDS(on) = 0.0085 Ω @ 10V TYPICAL Qg = 24 nC @ 4.5 V CONDUCTION LOSSES REDUCED


    Original     		PDF STSJ25NF3LL STSJ25NF3LL

    p421 coupler

    Abstract: p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic
    Text: 4. Supplementary Information 4–1 Current Transfer Ratio CTR , LED Trigger Current (IFT) Ranking and Marking Unit: mm Standard rank classifications are applied for the CTR of transistor-type photocouplers and for the IFT of MOSFET, SCR, Triac-type photocouplers. Indicative product markings corresponding to rank names are as shown below.


    Original     		PDF TLP180 TLP181 TLP280 TLP280-4 TLP281 TLP281-4 TLP321 TLP321-2/-3/-4 IEC435/ IEC65/ p421 coupler p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic

    IRLML5203PBF

    Abstract: IRLML2402 IRLML2803 marking BS mosfet
    Text: PD - 94895A IRLML5203PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 4895A IRLML5203PbF OT-23 EIA-481 EIA-541. IRLML5203PBF IRLML2402 IRLML2803 marking BS mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD24151 Preliminary LINEAR INTEGRATED CIRCUIT 24V, 1.5A, 1.4MHZ ASYNCHRONOUS STEP-DOWN DC/DC CONVERTER  DESCRIPTION The UTC UD24151 is a monolithic step-down switch mode converter with a built-in power MOSFET. It achieves 1.5A peak


    Original     		PDF UD24151 UD24151 QW-R221-029

    MP2361DH

    Abstract: 2361D MP2361 EV2361
    Text: MP2361 2A, 23V, 1.4MHz Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP2361 is a monolithic step-down switch mode converter with a built-in internal power MOSFET. It achieves 2A continuous output current over a wide input supply range with


    Original     		PDF MP2361 MP2361 MSOP10E MP2361DH 2361D EV2361

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4125 High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range


    Original     		PDF PE4125 PE4125

    G5764

    Abstract: No abstract text available
    Text: G5764 Global Mixed-mode Technology 3A Step-down DC/DC Features General Description „ „ „ „ „ „ „ „ „ „ „ The G5764 is a monolithic step-down switch mode regulator with a built in internal power MOSFET. It achieves 3A continuous output current over a wide input


    Original     		PDF G5764 G5764 380kHz G5764F11U F/35V

    Untitled

    Abstract: No abstract text available
    Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF 711002b BSS83 OT143