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    MARKING BR SOT23 TRANSISTOR Search Results

    MARKING BR SOT23 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING BR SOT23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


    Original     		PDF O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f

    1F SOT 23

    Abstract: 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 1F SOT 23 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850

    marking sk sot-23

    Abstract: SOT23 marking sk SOT-23 marking E9 j y w sot23 SOT-23 marking SK MARKING SY SOT23 sot23 Marking f7 marking KL sot-23 sk sot-23 sot-23 Marking EJ
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 marking sk sot-23 SOT23 marking sk SOT-23 marking E9 j y w sot23 SOT-23 marking SK MARKING SY SOT23 sot23 Marking f7 marking KL sot-23 sk sot-23 sot-23 Marking EJ

    marking 04 sot-23

    Abstract: MARKING 2F SOT23 2F SOT23 marking NF sot-23 SOT-23 ASE sot23 MARKING 1l LBC* MARKING marking 1G SOT23 sot23 marking 2f marking 2f sot-23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1 Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • Pb-Free Packages are Available 3 MAXIMUM RATINGS Rating


    Original     		PDF LBC846ALT1 LBC846 LBC847, LBC850 LBC848, LBC849 marking 04 sot-23 MARKING 2F SOT23 2F SOT23 marking NF sot-23 SOT-23 ASE sot23 MARKING 1l LBC* MARKING marking 1G SOT23 sot23 marking 2f marking 2f sot-23

    transistor bq

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0pF. z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412


    Original     		PDF 2SC2412 2SA1037 OT-23 BL/SSSTC020 transistor bq

    marking BS SOT23

    Abstract: marking Bq sot23 marking BQ sot-23 bq transistor sot23 transistor sot23 MARKING 560 Transistor marking BQ Marking br sot23 Transistor marking br sot23 marking BS SOT-23 transistor sot23 pf
    Text: 2SC2412 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage


    Original     		PDF OT-23 2SC2412 OT-23 100MHz marking BS SOT23 marking Bq sot23 marking BQ sot-23 bq transistor sot23 transistor sot23 MARKING 560 Transistor marking BQ Marking br sot23 Transistor marking br sot23 marking BS SOT-23 transistor sot23 pf

    marking BQ sot-23

    Abstract: marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0Pf z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412


    Original     		PDF 2SC2412 2SA1037 OT-23 BL/SSSTC020 marking BQ sot-23 marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC856ALT1G LBC856 LBC857 LBC858, LBC859 LBC856ALT1G

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1 Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF LBC856ALT1 LBC856 LBC857 LBC858, LBC859 LBC856ALT1S-6/7 BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 SOT23 MARKING JC operation of BC557 TRANSISTOR 3B SOT 23 sot-23 body marking A 4 LBC* MARKING pk transistor marking sot23

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856

    LBC858ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC858ALT1G

    LBC858BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC858BLT1G

    LBC856BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • LBC857CLT1G S-LBC857CLT1G Series ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC856BLT1G

    LBC857ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC857ALT1G

    LBC857CLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.


    Original     		PDF AEC-Q101 LBC857CLT1G S-LBC857CLT1G LBC857CLT1G S-LBC857CLT1G OT-23

    LBC856ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • LBC857CLT1G S-LBC857CLT1G Series ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		PDF LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC856ALT1G

    LBC858CLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.


    Original     		PDF AEC-Q101 LBC857CLT1G S-LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC858CLT1G

    2SC2714

    Abstract: qy sot23 transistor qy
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC2714 Pb Small reverse transfer capacitance: Lead-free Cre=0.7pF Typ. z Low noise Figure:NF=2.5dB(Typ.) f=100MHz. APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SC2714 100MHz. OT-23 Junctio-80 BL/SSSTC098 2SC2714 qy sot23 transistor qy

    transistor aqy

    Abstract: marking code RY SOT KTC3879 KTC3880S NPN Silicon Epitaxial Planar Transistor
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Small reverse transfer capacitance. z Low noise figure. KTC3880S Pb Lead-free APPLICATIONS z High frequency Low noise amplifier application. z VHF band amplifier application.


    Original     		PDF KTC3880S OT-23 KTC3879 BL/SSSTC111 transistor aqy marking code RY SOT KTC3879 KTC3880S NPN Silicon Epitaxial Planar Transistor

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC2714 Pb Small reverse transfer capacitance: Lead-free Cre=0.7pF Typ. z Low noise Figure:NF=2.5dB(Typ.) f=100MHz. APPLICATIONS z High frequency amplifier applications.


    Original     		PDF 2SC2714 100MHz. OT-23 BL/SSSTC098

    2sa1037

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z z 2SA1037 Pb Low IC.ICMAX. =-150mA. Lead-free Low VCE sat . Ideal for low-voltage operation. APPLICATIONS z Ideal for low-voltage operation. SOT-23 ORDERING INFORMATION


    Original     		PDF 2SA1037 -150mA. OT-23 BL/SSSTC013 2sa1037

    transistor marking code SOT-23

    Abstract: TRANSISTOR 2sc5344 sot23 marking code br 2sc5344 TRANSISTOR BL 100 Marking br sot23 Transistor marking code PC sot-23 transistor marking PB Marking Code fay MARKING CODE br 13 SOT23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent hFE linearity z Power dissipation. 2SC5344 Pb Lead-free APPLICATIONS z General small signal amplifier. SOT-23 ORDERING INFORMATION Type No. 2SC5344 Marking


    Original     		PDF 2SC5344 OT-23 3000/Tape transistor marking code SOT-23 TRANSISTOR 2sc5344 sot23 marking code br 2sc5344 TRANSISTOR BL 100 Marking br sot23 Transistor marking code PC sot-23 transistor marking PB Marking Code fay MARKING CODE br 13 SOT23

    MMBR2857

    Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)


    OCR Scan     		PDF OT-23 MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR2857 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 BFS17 E1