Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel
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L2SC2412KXLT1G
L2SC2412KQLT1G
L2SC2412KQLT3G
L2SC2412KRLT1G
L2SC2412KRLT3G
L2SC2412KSLT1G
L2SC2412KSLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel
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L2SC2412KXLT1G
L2SC2412KQLT1G
L2SC2412KQLT3G
L2SC2412KRLT1G
L2SC2412KRLT3G
L2SC2412KSLT1G
L2SC2412KSLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081XT1G FEATURE ƽLow Cob,Cob=2pF Typ. . ƽEpitaxial planar type. 3 ƽPNP complement:L2SA1576A ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking
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L2SC4081XT1G
L2SA1576A
L2SC4081QT1G
3000/Tape
L2SC4081QT3GG
10000/Tape
L2SC4081RT1G
L2SC4081RT3GG
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transistor 2SA1037K
Abstract: transistor 2sc2412k 2SA1037K 2SC2412K
Text: 2SC2412K NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES SC-59 A n Low Cob. n Cob=2.0pF n Compements the 2SA1037K n RoHS Compliant Product L S 2 3 Top View B 1 D STRUCTURE G n n Expitaxial planar type
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2SC2412K
SC-59
2SA1037K
Collector-b100MHz
01-Jun-2002
transistor 2SA1037K
transistor 2sc2412k
2SA1037K
2SC2412K
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t06 marking sot23
Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W
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2PA1576Q
SC-70
BC808W
OT323
2PA1576R
BC808-16
2PA1576S
BC808-16W
t06 marking sot23
BC857 3ft
marking 6Ct SOT23
SOT89 marking cec
marking da sot89
MARKING BL SOT89
SOT23 "Marking Code" t04
SOT89 MARKING CODE
marking t04 sot23
marking 1G SOT23
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2SC2411KR
Abstract: MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124
Text: SC-59 BIPOLAR TRANSISTORS NPN TRANSISTORS The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Type Function 2SC2411KP amplifier 2SC2411KQ amplifier 2SC2411KR amplifier 2SC2412KQ general purpose
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SC-59
2SC2411KP
2SC2411KQ
2SC2411KR
2SC2412KQ
2SC2412KR
2SC2412KS
2SC2413KP
2SC2413KQ
2SC3837K
MMST8598
2SD1781KQ
2SA1036KR
MMST5086
MMST5088
2sa1037aks
ROHM marking AQ
2SD1781KR
MMST4124
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2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A
Text: Transistors 2SB0709A 2SB709A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High forward current transfer ratio hFE
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2SB0709A
2SB709A)
2SD0601A
2SD601A)
2SB0709A
2SB709A
2SD0601A
2SD601A
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2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25
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2002/95/EC)
2SB0709A
2SB709A)
2SD0601A
2SD601A)
2SB0709A
2SB709A
2SD0601A
2SD601A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25
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2002/95/EC)
2SB0709A
2SB709A)
2SD0601A
2SD601A)
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2pb601a
Abstract: 2PB601 2PB709A 2PB709AQ 2PB709AR 2PB709AS Marking BQ SC59
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 2PB709A PNP general purpose transistor Product data sheet Supersedes data of 1997 Jun 19 1999 Apr 23 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709A FEATURES PINNING • Low current max. 100 mA
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M3D114
2PB709A
SC-59
2PB601A.
2PB709AQ
2PB709AS
MAM322
2PB709AR
115002/00/04/pp6
2pb601a
2PB601
2PB709A
2PB709AQ
2PB709AR
2PB709AS
Marking BQ SC59
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2PD601A
Abstract: No abstract text available
Text: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59
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711002b
2PB709;
2PB709A
2PD601
2PD601A
-SC59
2PB709Q:
2PB709R:
2PB709S:
2PB709AQ:
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SOT89 MARKING CODE 3D
Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK
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OT143,
OT223
OT323
PXTA27
BCX51
BCW60A
BCW60B
BCX51-10
BCW60C
BCX51-16
SOT89 MARKING CODE 3D
sot89 mark code AE
sot23 mark code AE
3D sot23
SOT89 marking cec
SOT89 MARKING CODE 43
marking 1p sot23
sot23 p04 marking
marking P1R
SOT89 MARKING 5G
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sc59
Abstract: BH ar transistor 2PB709R 2PB709S 2PD601A lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q
Text: Philips Semiconductors H 7 1 1 0 fi2 b 0 G7 D0 1 S b 4 fi IH P H IN PNP general purpose transistor FEATURES Objective specification 2PB709; 2PB709A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. & DESCRIPTION a PNP transistor in a plastic SC59
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0G70D15
2PB709;
2PB709A
2PD601
2PD601A
MSA314
2PB709Q:
2PB709R:
2PB709S:
2PB709AQ:
sc59
BH ar transistor
2PB709R
2PB709S
lem HA
2PB709
2PB709A
2PB709AQ
2PB709Q
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2PB601A
Abstract: 2PB601 Marking BQ SC59
Text: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
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2PB709A
SC-59
2PB601A.
MAM322
2PB709AQ
2PB709AR
2PB709AS
SC-59)
2PB601A
2PB601
Marking BQ SC59
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2PB709R
Abstract: 2PB709AQ 2PD601A 2PB709 2PB709A 2PB709AR 2PB709AS 2PB709Q 2PB709S 2PD601
Text: Philips Semiconductors Product specification PNP general purpose transistors 2PB709; 2PB709A FEATURES • High DC current gain • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general purpose switching and amplification.
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2PB709;
2PB709A
2PD601
2PD601A
2PB709Q
2PB709R
2PB709S
2PB709AQ
2PB709AR
2PB709AS
2PB709
2PB709A
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marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
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2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
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2PD601A
Abstract: No abstract text available
Text: bbsa^ai oosbGMT Philips Semiconductors » apx PNP general purpose transistor 2PB709; 2PB709A N ANER PHILIPS/DISCRETE FEATURES Objective specification b?E ]> PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. c DESCRIPTION
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2PB709;
2PB709A
2PD601
2PD601A
2PB709Q:
2PB709R:
2PB709S:
2PB709AQ:
2PB709
2PB709AR:
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TOSHIBA A5
Abstract: No abstract text available
Text: TOSHIBA 2SC3295 TOSHIBA TRANSISTOR SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC3295 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • + : hjTE-600 ~ 3600 High Iif e High Voltage High Collector Current Small Packge 0.5
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2SC3295
hjTE-600
150mA
961001EAA2'
TOSHIBA A5
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sd241 equivalent
Abstract: marking 3178 SO-8 amp
Text: MOTOROLA MBR3045CT SD241 • SEMICONDUCTOR TECHNICAL DATA MBR3045CT and SD241 are Motorola Preferred Devices SCHOTTKY BARRIER RECTIFIERS Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
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MBR3045CT
SD241
SD241
Solderi30
DO-35
sd241 equivalent
marking 3178 SO-8 amp
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marking u3j
Abstract: SOT223 6 pin smb marking U3j marking 0f sot143 244 u3d ae SMC MARKING motorola dpak top marking 360 u3j
Text: MOTOROLA h SEMICONDUCTOR TECHNICAL DATA MURS320T3 MURS360T3 Su rface M ou n t U ltrafast Pow er Rectifiers Motorola Pi«ferrad DevtcM . . . employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes,
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MURS320T3
MURS360T3
DO-35
marking u3j
SOT223 6 pin
smb marking U3j
marking 0f sot143
244 u3d
ae SMC MARKING
motorola dpak top marking
360 u3j
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1N5831
Abstract: E5 sot223 1N5829
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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prop30
DO-35
1N5831
E5 sot223
1N5829
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1N6095
Abstract: No abstract text available
Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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1N6095
1N6096
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3148b
Abstract: No abstract text available
Text: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
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OCR Scan
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PDF
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MBR3520
MBR3535
MBR3545
MBR3545
3148b
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1N5628
Abstract: 12115X marking AB SOD123 1N5828
Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5826
1N5827
1N5828
1N582S
1N5828
DO-35
1N5628
12115X
marking AB SOD123
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