Untitled
Abstract: No abstract text available
Text: SCRH8D43 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS Inductance Test uH Frequency DC Resistance ( MAX) (2) (1) Saturation Temperature
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SCRH8D43
100KHZ
SCRH8D43-4R7
SCRH8D43-6R8
SCRH8D43-100
SCRH8D43-150
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Untitled
Abstract: No abstract text available
Text: SCRH62 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS Inductance Test uH Frequency DC Resistance ( MAX) (2) (1) Saturation(3) Temperature (4)
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SCRH62
100KHZ
SCRH62-4R0
SCRH62-5R5
SCRH62-6R3
SCRH62-7R1
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Untitled
Abstract: No abstract text available
Text: SCRH8D43 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS Inductance Test uH Frequency DC Resistance (Ω MAX) (2) (1) Saturation Temperature
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SCRH8D43
100KHZ
SCRH8D43-4R7
SCRH8D43-6R8
SCRH8D43-100
SCRH8D43-150
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Untitled
Abstract: No abstract text available
Text: SCRH62 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A)
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SCRH62
100KHZ
SCRH62-5R5
SCRH62-6R3
SCRH62-7R1
SCRH62-8R0
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Untitled
Abstract: No abstract text available
Text: SCRH64B SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCRH64B-100 SCRH64B-120 SCRH64B-150 SCRH64B-180 SCRH64B-220 SCRH64B-270
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SCRH64B
SCRH64B-100
SCRH64B-120
SCRH64B-150
SCRH64B-180
SCRH64B-220
SCRH64B-270
SCRH64B-330
SCRH64B-390
SCRH64B-470
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Untitled
Abstract: No abstract text available
Text: SCRH73B SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH73B-100 SCRH73B-120 SCRH73B-150 SCRH73B-180 SCRH73B-220 SCRH73B-270 SCRH73B-330
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SCRH73B
SCRH73B-100
SCRH73B-120
SCRH73B-150
SCRH73B-180
SCRH73B-220
SCRH73B-270
SCRH73B-330
SCRH73B-390
SCRH73B-470
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Untitled
Abstract: No abstract text available
Text: SCRH64B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCRH64B-100 SCRH64B-120 SCRH64B-150 SCRH64B-180 SCRH64B-220 SCRH64B-270
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SCRH64B
SCRH64B-100
SCRH64B-120
SCRH64B-150
SCRH64B-180
SCRH64B-220
SCRH64B-270
SCRH64B-330
SCRH64B-390
SCRH64B-470
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Untitled
Abstract: No abstract text available
Text: SCRH73B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH73B-100 SCRH73B-120 SCRH73B-150 SCRH73B-180 SCRH73B-220 SCRH73B-270 SCRH73B-330
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SCRH73B
SCRH73B-100
SCRH73B-120
SCRH73B-150
SCRH73B-180
SCRH73B-220
SCRH73B-270
SCRH73B-330
SCRH73B-390
SCRH73B-470
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agilent model marking code
Abstract: SOT 363 marking code 06 low noise
Text: Agilent HSMS-281x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • Low Flicker Noise • Low FIT Failure in Time Rate* Pin Connections and Package Marking Description/Applications 1 2 3 6 GUx These Schottky diodes are
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HSMS-281x
5989-2493EN
5989-4021EN
agilent model marking code
SOT 363 marking code 06 low noise
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MGA-85563-BLK
Abstract: MGA-85563 rfics marking 76 A004R MGA-85563-TR1 NF50 marking CODE GA sot363
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • Lead-free Option Available Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
5968-6303E
5989-1799EN
MGA-85563-BLK
rfics marking 76
A004R
MGA-85563-TR1
NF50
marking CODE GA sot363
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BCW61
Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF
Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration
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BCW61,
BCX71
BCW60,
BCX70
120Hz
61/BCX
EHP00356
EHP00357
10kHz
BCW61
BCX71
BCs sot23
marking BJs SOT23
sot23 transistor marking 12E
61FN
BJs SOT23
BKs SOT23
BCW60
BCW61FF
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BCX 71G E6327
Abstract: BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23
Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration
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BCW61,
BCX71
BCW60,
BCX70
VPS05161
Apr-12-2002
BCX 71G E6327
BKs SOT23
sot23 transistor marking 12E
BNS 180
BHS SOT23
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BCX71
Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN
Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration
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BCW61,
BCX71
BCW60,
BCX70
71KRS
120Hz
61/BCX
EHP00356
EHP00357
BCX71
marking BJs SOT23
BCW60
BCW61
BCW61FF
BCX70
61FN
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Q62702-C1478
Abstract: C1890 ic c1891 datasheet Q62702-C1482 Q62702-C1554 Q62702-C1556 Q62702-C1585 Q62702-C1586 Q62702-C1654 Q62702-C1890
Text: PNP Silicon AF Transistors ● ● ● ● ● BCW 61 BCX 71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN Type Marking Ordering Code
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Q62702-C452
Q62702-C1585
Q62702-C1478
Q62702-C1556
Q62702-C1890
Q62702-C1891
Q62702-C1482
Q62702-C1586
Q62702-C1554
Q62702-C1654
Q62702-C1478
C1890
ic c1891 datasheet
Q62702-C1482
Q62702-C1554
Q62702-C1556
Q62702-C1585
Q62702-C1586
Q62702-C1654
Q62702-C1890
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BCW61FF
Abstract: BCs sot23
Text: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking
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OT-23
120Hz
BCW61FF
BCs sot23
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71 SOT-23
Abstract: No abstract text available
Text: BCW 61, BCX 71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration
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OT-23
61/BCX
71 SOT-23
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Untitled
Abstract: No abstract text available
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
00B5h
00C5h
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cFeon EN
Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
cFeon EN
cFeon
sg32 diode
EN29LV640B
7400
4p toggle switch
555 data sheet
cFeon EN29LV640B
cFeon F
data sheet 555
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cFeon
Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
cFeon
cFeon F
cFeon EN29LV640B
cFeon EN29lv640
A0-A21
EN29LV640b
cfeon flash
72-SA
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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PDF
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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BCW61A
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking
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OCR Scan
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PDF
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Q62702-C452
Q62702-C1585
Q62702-C1478
Q62702-C1556
Q62702-C1890
Q62702-C1891
62702-C1482
Q62702-C1586
Q62702-C1554
Q62702-C1654
BCW61A
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C1554
Abstract: BKs sot-23 SIEMENS BJS marking BJs
Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking
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OCR Scan
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PDF
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62702-C452
62702-C1585
62702-C1478
Q62702-C1556
Q62702-C1890
Q62702-C1891
Q62702-C1482
62702-C1586
62702-C1554
62702-C1654
C1554
BKs sot-23
SIEMENS BJS
marking BJs
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Untitled
Abstract: No abstract text available
Text: BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 - 6C BC818 = 6H BC818-16 = 6E BC818-25 - 6F BC818-40 - 6G PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm 3.0 2.8 0.4S C J °-38 r i —I
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OCR Scan
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PDF
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BC817
BC818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
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BC817
Abstract: bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Text: 23Ö33TM □□□□73 4 T07 • BC817 BC818 DÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P—N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m
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OCR Scan
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PDF
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BC817
BC818
BC817
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
bc818
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
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