marking code vishay label
Abstract: origin capacitor jedec code VISHAY MARKING CODE COUNTRY OF ORIGIN capacitor package Vishay capacitor code marking IEC 60068-1 marking code diode 04 transistor country code
Text: Package Marking Vishay BCcomponents Package Marking PACKAGE MARKING The Capacitor Package Marking is detailed as below: BARCODE LABEL MARKING LINE MARKING EXPLANATION 1 Manufacturer's name 2 3 Country of origin Sub-family 4 5 6 Type description Capacitance value in µF, tolerance, voltage and climatic
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19-Oct-04
marking code vishay label
origin
capacitor jedec code
VISHAY MARKING CODE
COUNTRY OF ORIGIN
capacitor package
Vishay capacitor code marking
IEC 60068-1
marking code diode 04
transistor country code
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B35R
Abstract: Z6W27V DO-218 do218 Z6W27
Text: SEMICONDUCTOR Z6W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B35R 0D24 No. Item 1 Description Bar N(-) Type B35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z6W27V
DO-218
B35R
Z6W27V
do218
Z6W27
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b30r
Abstract: Z5W27V b30r 0d24 marking b30r do-218 do218 1b30r
Text: SEMICONDUCTOR Z5W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B30R 0D24 No. Item 1 Description Bar N(-) Type B30R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W27V
DO-218
b30r
Z5W27V
b30r 0d24
marking b30r
do218
1b30r
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E30A23VS
Abstract: A30S
Text: SEMICONDUCTOR E30A23VS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30S E30A23VS A : Voltage classification 0D24
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E30A23VS
E30A23VS
A30S
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1A30R
Abstract: MARKING CMR A30R E30A23VR
Text: SEMICONDUCTOR E30A23VR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30R E30A23VR A : Voltage classification 0D24
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E30A23VR
1A30R
MARKING CMR
A30R
E30A23VR
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e35r
Abstract: Z5W37V do-218 do218
Text: SEMICONDUCTOR Z5W37V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 E35R 0D24 No. Item 1 Description Bar N(-) Type E35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W37V
DO-218
e35r
Z5W37V
do218
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Z4W27V
Abstract: DO-218 B25R do218 month marking
Text: SEMICONDUCTOR Z4W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B25R 0D24 No. Item 1 Description Bar N(-) Type B25R B : Voltage Classification Lot No. 2008. 7. 2 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z4W27V
DO-218
Z4W27V
B25R
do218
month marking
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do-218
Abstract: H35R Z5W48V do218 diode 218 transistor day
Text: SEMICONDUCTOR Z5W48V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 H35R 0D24 No. Item 1 Description Bar N(-) Type H35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W48V
DO-218
H35R
Z5W48V
do218
diode 218
transistor day
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E35A2CR
Abstract: e35a Diode MarkING N
Text: SEMICONDUCTOR E35A2CR MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35R 0D24 E35A2CR Year 0~9 : 2000~2009 D Month
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E35A2CR
E35A2CR
e35a
Diode MarkING N
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transistor day
Abstract: diode 30s Diode MarkING N MARKING CMR E30A2CS
Text: SEMICONDUCTOR E30A2CS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30S 0D24 E30A2CS Year 0~9 : 2000~2009 D Month
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E30A2CS
transistor day
diode 30s
Diode MarkING N
MARKING CMR
E30A2CS
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diode u1G
Abstract: diode 29 SMA Package
Text: SEMICONDUCTOR SMAU1G MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking U1G 1 2 3 No. Item Marking Polarity Device Name Lot No. 2007. 7. 26 Revision No : 0 Description Bar Cathode U1G SMAU1G 7 Year 0~9 : 2000~2009 29 Week 29 : 29th Week
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diode b34
Abstract: b34 diode marking b34 smcb34 diode marking b34 b34 MARKING B34 on SMC Package b34 datasheet laser
Text: SEMICONDUCTOR SMCB34 MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B34 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B34 Lot No. 623 Revision No : 0 Description Cathode SMCB34 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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SMCB34
diode b34
b34 diode
marking b34
smcb34
diode marking b34
b34 MARKING
B34 on
SMC Package
b34 datasheet
laser
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MARKING B24
Abstract: diode b24 SMBB24
Text: SEMICONDUCTOR SMBB24 MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B24 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B24 Lot No. 623 Revision No : 0 Description Cathode SMBB24 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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SMBB24
MARKING B24
diode b24
SMBB24
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transistor t05
Abstract: SMC Package marking 2 t05 transistor laser T05 Package transistor marking t05 T053 t05 marking
Text: SEMICONDUCTOR PG05NSSMC MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 T05 3 No. Item Polarity 2007. 1. 4 Marking Bar Type Name T05 Lot No. 623 Revision No : 0 Description Cathode PG05NSSMC 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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PG05NSSMC
transistor t05
SMC Package
marking 2
t05 transistor
laser
T05 Package
transistor marking t05
T053
t05 marking
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transistor 623
Abstract: marking on item SMB Package
Text: SEMICONDUCTOR SMBB36 MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B36 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B36 Lot No. 623 Revision No : 0 Description Cathode SMBB36 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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SMBB36
transistor 623
marking on item
SMB Package
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diode b34
Abstract: marking B34 SMBB34 b34 diode b34 datasheet b34 MARKING B34 on
Text: SEMICONDUCTOR SMBB34 MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B34 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B34 Lot No. 623 Revision No : 0 Description Cathode SMBB34 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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SMBB34
diode b34
marking B34
SMBB34
b34 diode
b34 datasheet
b34 MARKING
B34 on
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SMCB36
Abstract: 21B36 SMC Package semiconductor b36 marking on item b36 marking
Text: SEMICONDUCTOR SMCB36 MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B36 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B36 Lot No. 623 Revision No : 0 Description Cathode SMCB36 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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SMCB36
SMCB36
21B36
SMC Package
semiconductor b36
marking on item
b36 marking
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GN1G
Abstract: SMA Package E140
Text: SEMICONDUCTOR GN1G MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking E140 1 2 3 No. Item Marking Polarity Device Name Lot No. 2006. 6. 21 Revision No : 2 Description Bar Cathode E140 GN1G 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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SMAB34A
Abstract: B34A
Text: SEMICONDUCTOR SMAB34A MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B34A 3 No. Item Polarity 2007. 3. 20 Marking Bar Type Name B34A Lot No. 623 Revision No : 1 Description Cathode SMAB34A 6 Year 0~9 : 2000~2009 23 Week
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SMAB34A
SMAB34A
B34A
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MARKING CMR
Abstract: Diode MarkING N E30A2CR 0D24
Text: SEMICONDUCTOR E30A2CR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30R 0D24 E30A2CR Year 0~9 : 2000~2009 D Month
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E30A2CR
MARKING CMR
Diode MarkING N
E30A2CR
0D24
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E35A2CS
Abstract: Diode MarkING N
Text: SEMICONDUCTOR E35A2CS MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35S 0D24 E35A2CS Year 0~9 : 2000~2009 D Month
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E35A2CS
E35A2CS
Diode MarkING N
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SMBB26
Abstract: diode b26 laser B-26
Text: SEMICONDUCTOR SMBB26 MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B26 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B26 Lot No. 623 Revision No : 0 Description Cathode SMBB26 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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SMBB26
SMBB26
diode b26
laser
B-26
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SMB PACKAGE
Abstract: MARKING 2
Text: SEMICONDUCTOR PG12NSSMB MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 T12 3 No. Item Polarity 2007. 1. 4 Marking Bar Type Name T12 Lot No. 623 Revision No : 0 Description Cathode PG12NSSMB 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week
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PG12NSSMB
SMB PACKAGE
MARKING 2
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Text: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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00-4KQ
DO-34
RB441Q
RB721Q
DO-340USD]
RB100A
T0220FP
RB015T-40
R8026T-40
1N4146
ZP33A
TZP33A
zp 33a
1n9638
zp 278
1N52438
TZP10A
MTZJ 188
MTZJ 248
1N6233
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