h2 marking
Abstract: No abstract text available
Text: ERB43 0.5A ( 200 to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics 種07.
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ERB43
ERB43
h2 marking
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Untitled
Abstract: No abstract text available
Text: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability
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ERA22
ERA22
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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emc fi
Abstract: filters B84143-B400-S20 B84144 B84143-B320-S20 Converter for Induction Heating B84144-G500-S B84143-G20-R11 SPACE POWER ELECTRONICS B84142-B16-R
Text: Filters for Converters and Power Electronics Collection 2000 http://www.epcos.com Filters for Converters and Power Electronics EMC filters are indispensable in industrial installations when it comes to preventing RF disturbance in order to ensure trouble-free operation. The filters reduce both RFI emission and susceptibility to
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SSB0999-Z
B84144
B84144-A16-R
-A36-R
B84144-A50-R
B84144-A80-R
B84144-A120
-A150-R
B84144-A180-R
emc fi
filters
B84143-B400-S20
B84144
B84143-B320-S20
Converter for Induction Heating
B84144-G500-S
B84143-G20-R11
SPACE POWER ELECTRONICS
B84142-B16-R
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SSB1526-A
Abstract: din 50010 B84143-B
Text: 3-Line Filters B84143-B*-R110 for Converters and Power Electronics B84143-B*-R112 Power line filters for three-phase systems Rated voltage 480/275 and 520/300 V~, 50/60 Hz Rated current 8 to 200 A Construction • Three-line filter ■ Metal case ■ Book size
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B84143-B
-R110
-R112
SSB1526-A
din 50010
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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Untitled
Abstract: No abstract text available
Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: • Dual Diode Construction —
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MBRP20030CTL
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Untitled
Abstract: No abstract text available
Text: MBRP20045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20045CT
B20045T
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onsemi
Abstract: between30
Text: MBRP20045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20045CT
B20045T
onsemi
between30
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Untitled
Abstract: No abstract text available
Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction —
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MBRP20030CTL
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ZB4BZ62
Abstract: ZB6-Y009 4458D XB4BA31 XB4BD xb4bw3 XB4BD25 XB4BS542 xeng1191 ZB4BZ1905
Text: Push Buttons and Operator Interface 16 mm XB6 22 mm XB4 22 and 30 mm Most Common Complete Operators Class 9001 Type K, SK—30 mm and XB4-XB5 22 mm most common complete operators assembled with contact blocks and suggested legend plates. Start-Stop and Hand-Of-Auto are just a few of the configurations
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SK--30
9001CT0001.
ZB4BZ62
ZB6-Y009
4458D
XB4BA31
XB4BD
xb4bw3
XB4BD25
XB4BS542
xeng1191
ZB4BZ1905
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KS49BH2
Abstract: 9001CT0001 ZB6-Y009 ZBVBG5 ZB4BS84430 XB5 220 VAC schneider XB5AS542 KA32 KS11B XAP-A2108
Text: Push Buttons and Operator Interface 16 mm XB6 22 mm XB4 22 and 30 mm Most Common Complete Operators Class 9001 Type K, SK—30 mm and XB4-XB5 22 mm most common complete operators assembled with contact blocks and suggested legend plates. Start-Stop and Hand-Of-Auto are just a few of the configurations
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SK--30
9001CT0001.
KS49BH2
9001CT0001
ZB6-Y009
ZBVBG5
ZB4BS84430
XB5 220 VAC schneider
XB5AS542
KA32
KS11B
XAP-A2108
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2n22222
Abstract: 20 mf 25 metal rectifier diode
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20060CT
B20060T
2n22222
20 mf 25 metal rectifier diode
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Untitled
Abstract: No abstract text available
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20060CT
B20060T
150EAT
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MBRP20045CT
Abstract: No abstract text available
Text: MBRP20045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20045CT
r14525
MBRP20045CT/D
MBRP20045CT
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MBRP20045CT
Abstract: No abstract text available
Text: MBRP20045CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — • • •
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MBRP20045CT
r14525
MBRP20045CT/D
MBRP20045CT
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MBRP20030CTL
Abstract: No abstract text available
Text: MBRP20030CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20030CTL
r14525
MBRP20030CTL/D
MBRP20030CTL
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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Untitled
Abstract: No abstract text available
Text: Central P6SM B6.8A THRU P6SM B200A Semiconductor Corp. UN UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS DESCRIPTION The CENTRAL SEMICONDUCTOR P6SMB6.8A Series types are Surface Mount Uni-Directional Glass Passivated Junction Transient Voltage
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B200A
CHARACTERIST23
C100A
C110A
C120A
C130A
C150A
C160A
C170A
C180A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO b 3b ? 5 5 S 0 0 0 1 3 m 25E D 1 Order this data sheet by P6SMB6.8/D MOTOROLA SEM IC O N D U C T O R mmm T -il' TECHNICAL DATA P6SIVIB6.8,A Zen er O v e rv o lta g e T ran sie n t S u p p r e s s o rs thru P6SM B200,A The P6SMB6.8 series is designed to protect voltage sensitive components from high
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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HP-4194A
Abstract: GA452 ga451 Philips X7R capacitors 0805
Text: Product specification Philips Components Surface mounted ceramic _ Compact series multilayer capacitors_ _ FEATURES QUICK REFERENCE DATA • Six standard sizes • Dense dielectric layers DESCRIPTION Rated voltage U r DC :
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BSRC0127-33N
Abstract: B8XC0114-33N B8XC0114 33N capacitor B8XC0118-33N B9HC0114-33N BSRC0127 B7ZC0713-33N B9HC0113-33N BSRC0128-33N
Text: CERAMIC CAPACITORS CAPACITOR NETWORKS B9HC, B8XC, B8ZC, B7ZC & B5RC SERIES muRala. //t/tcrater e/t E/cctw/iics C-Networks are composed of several capacitors in parallel on a dielectric ceramic base plate. An excellent capacitance balance between elements has been achieved. Com pared to
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B7ZC0718-33N
B7ZC0717-33N
B7ZC0719-33N
B7ZC0713-33N
B7ZC0720-33N
-t-30%
--15N
C-22-C
BSRC0127-33N
B8XC0114-33N
B8XC0114
33N capacitor
B8XC0118-33N
B9HC0114-33N
BSRC0127
B9HC0113-33N
BSRC0128-33N
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bt201d
Abstract: BT271D BT161D S08 MARKING 220V 30A Relay bt ring generator 2a ss2525
Text: SGS-THOMSON “ 7i, HOSnmiWBDMIBS Application Specific Discretes A.S.D. THBTxxx11D TRIPO LAR OVERVOLTAGE PROTECTION FOR TELECOM LINE FEATURES • BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. ■ PEAK PULSE CURRENT :
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THBTxxx11D
bt201d
BT271D
BT161D
S08 MARKING
220V 30A Relay
bt ring generator 2a
ss2525
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