3B MARKING
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
1E-02
1E-03
1E-04
1E-05
1E-06
3B MARKING
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marking B16 diode
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
1E-02
1E-03
1E-04
1E-05
1E-06
marking B16 diode
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403D
Abstract: MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
403D
MBRA160T3
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403D
Abstract: MBRA160T3 3B marking SMA MARKING 14
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
403D
MBRA160T3
3B marking
SMA MARKING 14
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marking code onsemi Diode B16
Abstract: 403D MBRA160T3 on semiconductor B16
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
r14525
MBRA160T3/D
marking code onsemi Diode B16
403D
MBRA160T3
on semiconductor B16
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MBRA160T3G
Abstract: SMA CASE 403D-02 footprint Diode SMA marking code PB MBRA160T3-D 403D MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
MBRA160T3G
SMA CASE 403D-02 footprint
Diode SMA marking code PB
MBRA160T3-D
403D
MBRA160T3
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403D
Abstract: MBRA160T3 MBRA160T3G
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
403D
MBRA160T3
MBRA160T3G
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR SMAB16 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ・Low Profile Surface Mount Package. H A D ・Low Power Loss, High Efficiency. ・For Use in Low Voltage, High Frequency inverters, Free
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SMAB16
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SMAB16
Abstract: No abstract text available
Text: SEMICONDUCTOR SMAB16 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications.
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SMAB16
SMAB16
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MBRA160T3-D
Abstract: MBRA160T3G 403D MBRA160T3
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
MBRA160T3-D
MBRA160T3G
403D
MBRA160T3
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MBRA160T3G
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
MBRA160T3G
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Untitled
Abstract: No abstract text available
Text: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3
MBRA160T3/D
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SMAB16
Abstract: No abstract text available
Text: SEMICONDUCTOR SMAB16 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency.
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SMAB16
60MHz
SMAB16
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Untitled
Abstract: No abstract text available
Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3G,
NRVBA160T3G
MBRA160T3/D
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Untitled
Abstract: No abstract text available
Text: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA160T3G,
NRVBA160T3G
MBRA160T3/D
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smd 5b1
Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
smd 5b1
smd transistor 5B1
5B1 zener diode
smd transistor marking ey
B20 zener diode
planar transistor 5B1
ez 724
zener diode 4B3
B15 diode smd
b36 smd diode
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5B1 zener diode
Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
5B1 zener diode
6b2 zener diode
zener diode 4B3
B20 zener diode
smd diode b13
zener diode b27
b16 zener
b36 smd diode
zener b27
smd diode code B12
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zener diode b27
Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
zener diode b27
5B1 zener diode
B20 zener diode
smd 5b1
zener Diode B22
diode zener B16
zener smd marking EA
smd diode code B12
6b2 zener diode
smd transistor marking ey
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Untitled
Abstract: No abstract text available
Text: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung
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BZX84B2V4
BZX84B47
OT-23
O-236)
UL94V-0
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80-133
Abstract: BZX79-B10 SC-40 311201 SC40 BZX79-C10 spice BZX79C8V2 spice BZX79-F6V2 BZX79-A6V2 b30 do-35
Text: Philips Semiconductors - PIP - BZX79 series; Voltage regulator diodes Your browser does not support script Philips Semiconductors Home Product Buy MySemiconductors Contact catalogonline Product Information Information as of 2003-02-16 BZX79 series; Voltage regulator
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BZX79
80-133
BZX79-B10
SC-40
311201
SC40
BZX79-C10 spice
BZX79C8V2 spice
BZX79-F6V2
BZX79-A6V2
b30 do-35
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Zener Diode marking b27
Abstract: zener diode marking code B13 zener B13 zener diode b27
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V
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CMZB12
CMZB53
Zener Diode marking b27
zener diode marking code B13
zener B13
zener diode b27
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Untitled
Abstract: No abstract text available
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V • Suitable for high-density board assembly due to the use of a small
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CMZB12
CMZB53
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2sc6096
Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
Text: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages
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ECSP1208-4-F
12A01M
15C01M
12A01C
15C01C
12A02CH
15C02CH
30A02CH
30C02CH
2sc6096
2SC5707
2SA2044
ECB23
2sa2039
2sc5707 replacement
30C01M
SCH2102
2sa2169
2SB1396S
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Untitled
Abstract: No abstract text available
Text: BZV60 SERIES _ A VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended for use as low voltage stabilizers or voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series
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BZV60
DO-34
0033Tb7
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