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    MARKING AO4 Search Results

    MARKING AO4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING AO4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd9883

    Abstract: GH053A DTS-204 SE9189L SR50 Diode HC SR01 E105147 BA100 diode GT-209 equivalent SP8M3
    Text: Specification GH053A A2 -060415 Version April 2006 Data Modul AG - www.data-modul.com NO DATE REVISION 1 2005.06.15 PAGE 6 Change the part: R10,11,14,15 : 150Ω →47Ω AP4532GM(APEC)→AP4509GM(APEC) Add the vendor AO4606(AOS) Remove the vendor SP8M3(ROHM)


    Original     		PDF GH053A AP4532GM AP4509GM AO4606 F1206FA3000V032T F1206FA4000V032T BA100 -BA100 RC1608J911 RC1608F911 bd9883 DTS-204 SE9189L SR50 Diode HC SR01 E105147 BA100 diode GT-209 equivalent SP8M3

    AO4609

    Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
    Text: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side


    Original     		PDF AO4609 AO4609 Drai012 mm4609 aos Lot Code Week ALPHA MARKING CODE

    ao4800

    Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
    Text: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck


    Original     		PDF AO4800 AO4800 AO4800L AO4800L PD-00223 4800 so-8 aos Lot Code Week 4800 SO8

    PD0026

    Abstract: transistor C 4429 equivalent AO4429 AO4429L PD-002 aos Lot Code Week
    Text: AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard


    Original     		PDF AO4429 AO4429 AO4429L AO4429L PD-00268 PD0026 transistor C 4429 equivalent PD-002 aos Lot Code Week

    AO4916

    Abstract: 4916 mosfet AO4916L 4916 alpha rjl 10a
    Text: Rev 3: Nov 2004 AO4916, AO4916L Green Product Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch


    Original     		PDF AO4916, AO4916L( AO4916 AO4916L AO4916 PD-00071 4916 mosfet AO4916L 4916 alpha rjl 10a

    AO4420

    Abstract: AO4420L
    Text: Rev 4: Nov 2004 AO4420, AO4420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for


    Original     		PDF AO4420, AO4420L AO4420 AO4420L

    4407

    Abstract: TRANSISTOR 4407 4407 soic ALPHA SEMICONDUCTOR 4407 AO4407 AO4407L 4407 so8 AOS AO4407 4407 4407 so-8 4407 so 8
    Text: Rev 0:June 2002 Rev 1: Feb 2004 AO4407, AO4407L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable


    Original     		PDF AO4407, AO4407L AO4407 AO4407L 4407 TRANSISTOR 4407 4407 soic ALPHA SEMICONDUCTOR 4407 4407 so8 AOS AO4407 4407 4407 so-8 4407 so 8

    4410 SO-8

    Abstract: 4410 diode MARKING CODE 18A AO4410L transistor on 4410 AO4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE
    Text: Rev 0:Jan 2003 Rev 1:Jan 2004 Rev 2:Mar 2004 AO4410, AO4410L Lead-Free N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate


    Original     		PDF AO4410, AO4410L AO4410 AO4410L 4410 SO-8 4410 diode MARKING CODE 18A transistor on 4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE

    mosfet 4914

    Abstract: 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 AO4914 AO4914L 4914 alpha
    Text: Rev 0: July 2003 Rev 1: Jan 2004 Rev 2: Mar 2004 AO4914, AO4914L Lead-Free Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make


    Original     		PDF AO4914, AO4914L AO4914 AO4914L mosfet 4914 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 4914 alpha

    ao4600

    Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		PDF AO4600 AO4600 AO4600L AO4600L PD-00165 Complementary POWER MOSFET AO4600 PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2

    Untitled

    Abstract: No abstract text available
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		PDF AO4600 AO4600 AO4600L AO4600L PD-00165

    he807

    Abstract: No abstract text available
    Text: ATI électronique P.C,COÀINECI1oRStIE &1-Ao4-Ao7 SUMMARY ; ÀLLIÀNCE TECIINIOUE INDI'STRIELI.E BE&',t . d,4 ' 407 HEaoi . ao4. 407 CHOICE OF lHE SEhIE l; HEa - .lt4.607 DENOMINATIONÀND MÀRKING qÊ_Ê-oJ+ à%%% oEF èoÊC.!r\ HEoot. ao4.a07 GUIDES to@ûûê"&dbq*te,ro.dq€


    Original     		PDF HE807 he807

    AO4805

    Abstract: No abstract text available
    Text: June 2002 AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4805 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4805 AO4805

    transistor on 4409

    Abstract: on 4409 AO4409
    Text: Nov 2002 AO4409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4409 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4409 AO4409 transistor on 4409 on 4409

    AO4415

    Abstract: No abstract text available
    Text: August 2002 AO4415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4415 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4415 AO4415

    AO4400

    Abstract: AO4401 AO4800
    Text: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in


    Original     		PDF AO4800 AO4800 AO4400 AO4401 AO4801 AO4700 AO4701 AO4400 AO4401

    4404 SO-8

    Abstract: MM4404 AO4404
    Text: July 2001 AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in


    Original     		PDF AO4404 AO4404 4404 SO-8 MM4404

    AO4411

    Abstract: 4411 so-8 4411 ALPHA 4411 soic 8
    Text: August 2002 AO4411 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4411 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4411 AO4411 4411 so-8 4411 ALPHA 4411 soic 8

    4410 SO-8

    Abstract: diode MARKING CODE 18A AO4410 aos Lot Code Week
    Text: Jan 2003 AO4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a


    Original     		PDF AO4410 AO4410 4410 SO-8 diode MARKING CODE 18A aos Lot Code Week

    AO4401

    Abstract: ao4800
    Text: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO4401 AO4401 AO4400 AO4800 AO4801 AO4700 AO4701 ao4800

    AO4402

    Abstract: AO4800 mpf201 AO4400 AO4401
    Text: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO4402 AO4402 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 AO4800 mpf201 AO4400 AO4401

    AO4403

    Abstract: 4801 soic8 AO4400
    Text: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO4403 AO4403 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 4801 soic8 AO4400

    transistor on 4408

    Abstract: diode 4408 AO4408 ON 4408
    Text: Nov 2002 AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4408 uses advanced trench technology to provide excellent RDS ON , low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.


    Original     		PDF AO4408 AO4408 transistor on 4408 diode 4408 ON 4408

    4D0101

    Abstract: microstripline FR4 5964-9806E
    Text: mam H E W L E T T IS S A PACKARD 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • Ultra-M iniature Package • Internally Biased, Single +5 V Supply (14 mA)


    OCR Scan     		PDF MGA-86563 OT-363 SC-70) 0j062 0X6910004 0X006 0X0004 5964-9806E 4746E 4D0101 microstripline FR4 5964-9806E