bd9883
Abstract: GH053A DTS-204 SE9189L SR50 Diode HC SR01 E105147 BA100 diode GT-209 equivalent SP8M3
Text: Specification GH053A A2 -060415 Version April 2006 Data Modul AG - www.data-modul.com NO DATE REVISION 1 2005.06.15 PAGE 6 Change the part: R10,11,14,15 : 150Ω →47Ω AP4532GM(APEC)→AP4509GM(APEC) Add the vendor AO4606(AOS) Remove the vendor SP8M3(ROHM)
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GH053A
AP4532GM
AP4509GM
AO4606
F1206FA3000V032T
F1206FA4000V032T
BA100
-BA100
RC1608J911
RC1608F911
bd9883
DTS-204
SE9189L
SR50 Diode
HC SR01
E105147
BA100 diode
GT-209
equivalent SP8M3
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AO4609
Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
Text: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side
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AO4609
AO4609
Drai012
mm4609
aos Lot Code Week
ALPHA MARKING CODE
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ao4800
Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Text: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck
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AO4800
AO4800
AO4800L
AO4800L
PD-00223
4800 so-8
aos Lot Code Week
4800 SO8
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PD0026
Abstract: transistor C 4429 equivalent AO4429 AO4429L PD-002 aos Lot Code Week
Text: AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard
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AO4429
AO4429
AO4429L
AO4429L
PD-00268
PD0026
transistor C 4429 equivalent
PD-002
aos Lot Code Week
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AO4916
Abstract: 4916 mosfet AO4916L 4916 alpha rjl 10a
Text: Rev 3: Nov 2004 AO4916, AO4916L Green Product Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch
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AO4916,
AO4916L(
AO4916
AO4916L
AO4916
PD-00071
4916 mosfet
AO4916L
4916 alpha
rjl 10a
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AO4420
Abstract: AO4420L
Text: Rev 4: Nov 2004 AO4420, AO4420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for
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AO4420,
AO4420L
AO4420
AO4420L
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4407
Abstract: TRANSISTOR 4407 4407 soic ALPHA SEMICONDUCTOR 4407 AO4407 AO4407L 4407 so8 AOS AO4407 4407 4407 so-8 4407 so 8
Text: Rev 0:June 2002 Rev 1: Feb 2004 AO4407, AO4407L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable
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AO4407,
AO4407L
AO4407
AO4407L
4407
TRANSISTOR 4407
4407 soic
ALPHA SEMICONDUCTOR 4407
4407 so8
AOS AO4407 4407
4407 so-8
4407 so 8
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4410 SO-8
Abstract: 4410 diode MARKING CODE 18A AO4410L transistor on 4410 AO4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE
Text: Rev 0:Jan 2003 Rev 1:Jan 2004 Rev 2:Mar 2004 AO4410, AO4410L Lead-Free N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate
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AO4410,
AO4410L
AO4410
AO4410L
4410 SO-8
4410
diode MARKING CODE 18A
transistor on 4410
rg 625
marking 62m
4410 SO8
ALPHA YEAR CODE
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mosfet 4914
Abstract: 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 AO4914 AO4914L 4914 alpha
Text: Rev 0: July 2003 Rev 1: Jan 2004 Rev 2: Mar 2004 AO4914, AO4914L Lead-Free Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make
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AO4914,
AO4914L
AO4914
AO4914L
mosfet 4914
4914 mosfet
4914 dual n-channel
4914 DUAL MOSFET
4914
alpha omega 4914
ON 4914
4914 alpha
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ao4600
Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)
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AO4600
AO4600
AO4600L
AO4600L
PD-00165
Complementary
POWER MOSFET AO4600
PD-00165
P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
MARKING CODE l22
marking 49M
65D2
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Untitled
Abstract: No abstract text available
Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)
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AO4600
AO4600
AO4600L
AO4600L
PD-00165
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he807
Abstract: No abstract text available
Text: ATI électronique P.C,COÀINECI1oRStIE &1-Ao4-Ao7 SUMMARY ; ÀLLIÀNCE TECIINIOUE INDI'STRIELI.E BE&',t . d,4 ' 407 HEaoi . ao4. 407 CHOICE OF lHE SEhIE l; HEa - .lt4.607 DENOMINATIONÀND MÀRKING qÊ_Ê-oJ+ à%%% oEF èoÊC.!r\ HEoot. ao4.a07 GUIDES to@ûûê"&dbq*te,ro.dq€
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HE807
he807
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AO4805
Abstract: No abstract text available
Text: June 2002 AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4805 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
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AO4805
AO4805
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transistor on 4409
Abstract: on 4409 AO4409
Text: Nov 2002 AO4409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4409 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
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AO4409
AO4409
transistor on 4409
on 4409
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AO4415
Abstract: No abstract text available
Text: August 2002 AO4415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4415 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
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AO4415
AO4415
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AO4400
Abstract: AO4401 AO4800
Text: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in
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AO4800
AO4800
AO4400
AO4401
AO4801
AO4700
AO4701
AO4400
AO4401
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4404 SO-8
Abstract: MM4404 AO4404
Text: July 2001 AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in
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AO4404
AO4404
4404 SO-8
MM4404
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AO4411
Abstract: 4411 so-8 4411 ALPHA 4411 soic 8
Text: August 2002 AO4411 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4411 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
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AO4411
AO4411
4411 so-8
4411 ALPHA
4411 soic 8
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4410 SO-8
Abstract: diode MARKING CODE 18A AO4410 aos Lot Code Week
Text: Jan 2003 AO4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a
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AO4410
AO4410
4410 SO-8
diode MARKING CODE 18A
aos Lot Code Week
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AO4401
Abstract: ao4800
Text: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4401
AO4401
AO4400
AO4800
AO4801
AO4700
AO4701
ao4800
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AO4402
Abstract: AO4800 mpf201 AO4400 AO4401
Text: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4402
AO4402
AO4400
AO4401
AO4800
AO4801
AO4700
AO4701
AO4800
mpf201
AO4400
AO4401
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AO4403
Abstract: 4801 soic8 AO4400
Text: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4403
AO4403
AO4400
AO4401
AO4800
AO4801
AO4700
AO4701
4801 soic8
AO4400
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transistor on 4408
Abstract: diode 4408 AO4408 ON 4408
Text: Nov 2002 AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4408 uses advanced trench technology to provide excellent RDS ON , low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
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AO4408
AO4408
transistor on 4408
diode 4408
ON 4408
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4D0101
Abstract: microstripline FR4 5964-9806E
Text: mam H E W L E T T IS S A PACKARD 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • Ultra-M iniature Package • Internally Biased, Single +5 V Supply (14 mA)
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OCR Scan
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MGA-86563
OT-363
SC-70)
0j062
0X6910004
0X006
0X0004
5964-9806E
4746E
4D0101
microstripline FR4
5964-9806E
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